Light irradiation type heat treatment method and heat treatment apparatus
A semiconductor wafer is preheated with a halogen lamp, and then is heated by irradiation with a flash of light emitted from a flash lamp. The preheating with the halogen lamp is continued for a short time even after the flash lamp turns off. A radiation thermometer measures a front surface temperature and a back surface temperature of the semiconductor wafer. A temperature integrated value is calculated by integration of temperatures of the semiconductor wafer measured during a period from a start of the flash irradiation to an end of the heating of the semiconductor wafer. It is determined that the semiconductor wafer is cracked at the time of flash irradiation when the calculated temperature integrated value deviates from a preset range between an upper limit value and a lower limit value.
1. A heat treatment method for heating a substrate by irradiating the substrate with a flash of light, comprising the steps of:
(a) receiving a substrate in a chamber;
(b) irradiating said substrate with light emitted from a continuous lighting lamp to heat said substrate to a preheating temperature;
(c) irradiating a front surface of said substrate with a flash of light emitted from a flash lamp to heat the front surface;
(d) measuring temperatures of said substrate during a period from a start of said flash irradiation to an end of the heating of said substrate;
(e) integrating the temperatures of said substrate measured in said step (d) to calculate a temperature integrated value; and
(f) determining that said substrate is cracked when said temperature integrated value deviates from a preset range between an upper limit value and a lower limit value, wherein:
said step (d) includes measuring front surface temperatures and back surface temperatures of said substrate;
said step (e) includes integrating the front surface temperatures of said substrate and the back surface temperatures of said substrate; and
said step (f) includes determining that said substrate is cracked when a front surface temperature integrated value obtained by integrating the front surface temperatures of said substrate deviates from a preset range between an upper limit value and a lower limit value or a back surface temperature integrated value obtained by integrating the back surface temperatures of said substrate deviates from a preset range between an upper limit value and a lower limit value.
2. The heat treatment method according to claim 1 , wherein
said step (d) includes measuring temperatures of said substrate during a period from the start of said flash irradiation to an end of the heating of said substrate with said continuous lighting lamp.
3. The heat treatment method according to claim 1 , wherein
when it is determined in said step (f) that said substrate is cracked, supply and exhaust of gas into and out of said chamber are stopped.
4. A heat treatment method for heating a substrate by irradiating the substrate with a flash of light, comprising the steps of:
(a) receiving a substrate in a chamber;
(b) irradiating said substrate with light emitted from a continuous lighting lamp to heat said substrate to a preheating temperature;
(c) irradiating a front surface of said substrate with a flash of light emitted from a flash lamp to heat the front surface;
(d) measuring temperatures of said substrate during a period from a start of said flash irradiation to an end of the heating of said substrate;
(e) integrating the temperatures of said substrate measured in said step (d) to calculate a temperature integrated value; and
(f) determining that said substrate is cracked when said temperature integrated value deviates from a preset range between an upper limit value and a lower limit value, wherein:
said step (d) includes measuring front surface temperatures and back surface temperatures of said substrate;
said step (e) includes integrating the front surface temperatures of said substrate and the back surface temperatures of said substrate; and
said step (f) includes determining that said substrate is cracked when a front surface temperature integrated value obtained by integrating the front surface temperatures of said substrate deviates from a preset range between an upper limit value and a lower limit value and a back surface temperature integrated value obtained by integrating the back surface temperatures of said substrate deviates from a preset range between an upper limit value and a lower limit value.
5. The heat treatment method according to claim 4 wherein
said step (d) includes measuring temperatures of said substrate during a period from the start of said flash irradiation to an end of the heating of said substrate with said flash lamp.
6. The heat treatment method according to claim 4 , wherein
when it is determined in said step (f) that said substrate is cracked, supply and exhaust of gas into and out of said chamber are stopped.