Group III-nitride (III-N) devices and methods of fabrication
A device includes a diode that includes a first group III-nitride (III-N) material and a transistor adjacent to the diode, where the transistor includes the first III-N material. The diode includes a second III-N material, a third III-N material between the first III-N material and the second III-N material, a first terminal including a metal in contact with the third III-N material, a second terminal coupled to the first terminal through the first group III-N material. The device further includes a transistor structure, adjacent to the diode structure. The transistor structure includes the first, second, and third III-N materials, a source and drain, a gate electrode and a gate dielectric between the gate electrode and each of the first, second and third III-N materials.
1. A device comprising:
a diode structure comprising:
a first group III-nitride (III-N) material;
a second III-N material;
a third III-N material between the first and second III-N materials, wherein the second III-N material comprises a greater indium concentration than the third III-N material;
a first terminal comprising a metal, the first terminal in contact with the third III-N material; and
a second terminal coupled to the first terminal through the first group III-N material; and
a transistor structure adjacent to the diode structure, the transistor structure comprising:
the first, second, and third III-N materials;
a source and a drain;
a gate electrode; and
a gate dielectric between the gate electrode and each of the first, second, and third III-N materials.
2. The device of claim 1 , wherein the second III-N material and the third III-N material each comprise Al, Ga, In and N, wherein the third III-N material comprises less than 5 atomic percent indium and the second III-N material comprises at least 15 atomic percent indium.
3. The device of claim 1 , wherein the third III-N material is absent indium.
4. The device of claim 1 , wherein the second III-N material has a thickness that is greater than a thickness of the third III-N material.
5. The device of claim 1 , wherein the device further comprises a fourth III-N material between the first III-N material and the third III-N material.
6. The device of claim 5 , wherein the fourth III-N material comprises a lower gallium concentration than the third III-N material.
7. The device of claim 1 , wherein the device further comprises a spacer between a sidewall of the first terminal and a sidewall of the third III-N material, and wherein the spacer comprises silicon and at least one of oxygen or nitrogen.
8. The device of claim 1 , wherein the device further comprises a spacer on the third III-N material, and wherein the spacer is between a sidewall of the first terminal and a sidewall of the second III-N material.
9. The device of claim 1 , further comprising:
a processor; and
a radio transceiver coupled to the processor, wherein the radio transceiver comprises the diode structure and the transistor structure.
10. A device, comprising:
a diode structure comprising:
a first group III-nitride (III-N) material;
a second III-N material;
a third III-N material between the first and second III-N materials;
a fourth III-N material between the first and third III-N materials, wherein the fourth III- N material comprises a lower gallium concentration and a greater aluminum concentration than the third III-N material;
a first terminal comprising a metal, the first terminal in contact with the third and fourth III-N material; and
a second terminal coupled to the first terminal through the first group III-N material; and
a transistor structure adjacent to the diode structure, the transistor structure comprising:
the first, second, third, and fourth III-N materials;
a source and a drain;
a gate electrode; and
a gate dielectric between the gate electrode and each of the first, second, and third III-N materials.
11. The device of claim 10 , wherein the second III-N material comprises a greater indium concentration than the third III-N material.
12. The device of claim 10 , wherein the second III-N material has a thickness that is greater than a thickness of the third III-N material.
13. The device of claim 10 , wherein the fourth III-N material comprises a lower gallium concentration and a greater aluminum concentration than the third III-N material.
14. The device of claim 10 , wherein the fourth III-N material has a thickness between 1 nm and 3 nm.
15. The device of claim 10 , further comprising:
a processor; and
a radio transceiver coupled to the processor, wherein the radio transceiver comprises the diode structure and the transistor structure.
16. A device, comprising:
a diode structure comprising:
a first group III-nitride (III-N) material;
a second III-N material;
a third III-N material between the first and second III-N materials;
a first terminal comprising a metal, the first terminal in contact with the third III-N material;
a spacer on the third III-N material and between a sidewall of the first terminal and a sidewall of the second III-N material; and
a second terminal coupled to the first terminal through the first group III-N material; and
a transistor structure adjacent to the diode structure, the transistor structure comprising:
the first, second, and third III-N materials;
a source and a drain;
a gate electrode; and
a gate dielectric between the gate electrode and each of the first, second, and third III-N materials.
17. The device of claim 16 , wherein the second III-N material comprises a greater indium concentration than the third III-N material.
18. The device of claim 16 , wherein the device further comprises a fourth III-N material between the first III-N material and the third III-N material, and wherein the first terminal is in contact with the fourth III-N material.
19. The device of claim 16 , wherein the spacer further comprises a lateral portion between a portion of the first terminal and a portion of the third III-N material.
20. The device of claim 16 , further comprising:
a processor; and
a radio transceiver coupled to the processor, wherein the radio transceiver comprises the diode structure and the transistor structure.