OLED panel with trench overhang structures
Embodiments described herein generally relate to sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes substrate, pixel-defining layer (PDL) structures disposed over the section of the substrate, inorganic or metal overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. The PDL structures include a trench disposed in the top surface of the PDL structure. Each sub-pixel includes an anode, an OLED material disposed over and in contact with the anode, and a cathode disposed over the OLED material. The inorganic or metal overhang structures have an overhang extension that extends laterally over the trench. An encapsulation layer is disposed over the cathode and extends under at least a portion of the inorganic or metal overhang structures and along a top surface of the PDL structures.
1. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising an inorganic material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second metal overhangs, each of the first and second metal overhangs defined by an overhang extension of a metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second metal overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, sidewalls of the first and second PDL structures, the metal layer disposed on the peripheral portions of the upper surface, and the overhang extension; and
a cathode disposed on the OLED material disposed over:
the anode;
the sidewalls of the first and second PDL structures;
the metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the metal layer, wherein the cathode extends to contact exterior sidewalls of the OLED material and the overhang extension of the metal layer.
2. The device of claim 1 , further comprising an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the overhang extension of the metal layer;
an underside surface of each overhang extension of the metal layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
3. The device of claim 1 , wherein the device comprises a line-type architecture or a dot-type architecture.
4. The device of claim 1 , wherein the device comprises a local cathode contact.
5. The device of claim 1 , wherein the inorganic material comprises silicon nitride (Si 3 N 4 ), silicon oxynitride (SiON), magnesium fluoride (MgF 2 ), silicon oxide (SiO 2 ), or combinations thereof.
6. The device of claim 1 , wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or combinations thereof.
7. The device of claim 6 , wherein the TCO comprises IZO, ITO, IGZO, or combinations thereof.
8. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising an inorganic material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second metal overhangs, each of the first and second metal overhangs defined by an overhang extension of a metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second metal overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, sidewalls of the first and second PDL structures, the metal layer disposed on the peripheral portions of the upper surface, and the overhang extension; and
a cathode disposed on the OLED material disposed over:
the anode;
the sidewalls of the first and second PDL structures;
the metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures; and
the cathode is further disposed over the overhang extension of the metal layer.
9. The device of claim 8 , wherein the cathode extends to contact exterior sidewalls of the OLED material and the overhang extension of the metal layer.
10. The device of claim 9 , further comprising an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the overhang extension of the metal layer;
an underside surface of each overhang extension of the metal layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
11. The device of claim 8 , wherein the device comprises a line-type architecture or a dot-type architecture.
12. The device of claim 8 , wherein the device comprises a local cathode contact.
13. The device of claim 8 , wherein the inorganic material comprises silicon nitride (Si 3 N 4 ), silicon oxynitride (SiON), magnesium fluoride (MgF 2 ), silicon oxide (SiO 2 ), or combinations thereof.
14. The device of claim 8 , wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or combinations thereof.
15. The device of claim 14 , wherein the TCO comprises IZO, ITO, IGZO, or combinations thereof.
16. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising an inorganic material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second metal overhangs, each of the first and second metal overhangs defined by an overhang extension of a metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second metal overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, sidewalls of the first and second PDL structures, the metal layer disposed on the peripheral portions of the upper surface, and the overhang extension; and
a cathode.
17. The device of claim 16 , wherein the cathode is disposed on the OLED material disposed over:
the anode;
the sidewalls of the first and second PDL structures;
the metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the metal layer, wherein the cathode extends to contact exterior sidewalls of the OLED material and the overhang extension of the metal layer.
18. The device of claim 17 , further comprising an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the overhang extension of the metal layer;
an underside surface of each overhang extension of the metal layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
19. The device of claim 16 , wherein the device comprises a line-type architecture or a dot-type architecture.
20. The device of claim 16 , wherein the device comprises a dot-type architecture.
21. The device of claim 16 , wherein the device comprises a local cathode contact.
22. The device of claim 16 , wherein the inorganic material comprises silicon nitride (Si 3 N 4 ), silicon oxynitride (SiON), magnesium fluoride (MgF 2 ), silicon oxide (SiO 2 ), or combinations thereof.
23. The device of claim 16 , wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or combinations thereof.
24. The device of claim 23 , wherein the TCO comprises IZO, ITO, IGZO, or combinations thereof.
25. A device having a plurality of sub-pixels, each sub-pixel comprising:
a section of a substrate;
first and second pixel-defining layer (PDL) structures comprising an inorganic material, each of the first and second PDL structures having a trench disposed between peripheral portions of an upper surface of each of the first and second PDL structures;
first and second metal overhangs, each of the first and second metal overhangs defined by an overhang extension of a metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures, the overhang extension extending laterally past the trench to define the first and second metal overhangs;
an anode;
an organic light-emitting diode (OLED) material disposed on the anode, sidewalls of the first and second PDL structures, the metal layer disposed on the peripheral portions of the upper surface, and the overhang extension; and a cathode disposed on the OLED material disposed over:
the anode;
the sidewalls of the first and second PDL structures;
the metal layer disposed on the peripheral portions of the upper surface of the first and second PDL structures; and
the overhang extension of the metal layer, wherein the cathode extends to contact exterior sidewalls of the OLED material and the overhang extension of the metal layer; and
an encapsulation layer disposed to contact:
the cathode;
sidewalls of the cathode, the OLED material, and the overhang extension of the metal layer;
an underside surface of each overhang extension of the metal layer; and
a portion of a top surface of the trench disposed between peripheral portions each of the first and second PDL structures.
26. The device of claim 25 , wherein the device comprises a line-type architecture or a dot-type architecture.
27. The device of claim 25 , wherein the device comprises a local cathode contact.
28. The device of claim 25 , wherein the inorganic material comprises silicon nitride (Si 3 N 4 ), silicon oxynitride (SiON), magnesium fluoride (MgF 2 ), silicon oxide (SiO 2 ), or combinations thereof.
29. The device of claim 25 , wherein the metal layer comprises Ti, Mo, Al, Cu, TCO, or combinations thereof.
30. The device of claim 29 , wherein the TCO comprises IZO, ITO, IGZO, or combinations thereof.