High resolution advanced OLED sub-pixel circuit

1. A sub-pixel circuit, comprising:

at least two anodes disposed over a substrate, adjacent anodes defining a well;

adjacent overhang structures, the overhang structures comprising:

a first portion disposed in the well; and

a second portion disposed over the first portion and a portion of an uppermost surface of the anode, the second portion comprising:

overhang extensions extending past lower sidewalls of the first portion; and

an upper surface, the upper surface of the second portion is above the uppermost surface of the anodes, wherein the well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures,

an organic light emitting diode (OLED) material;

a cathode; and

an encapsulation layer, wherein the encapsulation layer extends under at least a portion of the second portion along a lower sidewall of the first portion, and contacts the bottom surface of the overhang extensions of the overhang structures.

2. The sub-pixel circuit of claim 1 , wherein the first portion comprises a first material and the second portion comprises a second material.

3. The sub-pixel circuit of claim 2 , wherein the first material and the second material are different.

4. The sub-pixel circuit of claim 2 , wherein the first material has a first etch rate and the second material has a second etch rate when exposed to an etchant.

5. The sub-pixel circuit of claim 4 , wherein the first etch rate and the second etch rate are different.

6. The sub-pixel circuit of claim 2 , wherein the first material comprises silicon.

7. The sub-pixel circuit of claim 2 , wherein the second material comprises silicon oxide.

8. The sub-pixel circuit of claim 2 , further comprising:

a global encapsulation layer disposed over the encapsulation layer.

9. The sub-pixel circuit of claim 8 , wherein the global encapsulation layer fills the trench area and the gap between the second portion of the adjacent overhang structures.

10. The sub-pixel circuit of claim 1 , wherein the cathode is disposed over the upper surface of the overhang structures, under the overhang extensions, and within the trench area.

11. The sub-pixel circuit of claim 1 , wherein the OLED material is disposed over the substrate within the trench area.

12. The sub-pixel circuit of claim 1 , wherein a first thickness of the OLED material disposed over the anodes and the upper surface of the overhang structures is larger than a second thickness of the OLED material disposed within the trench area.

13. A sub-pixel circuit, comprising:

at least two anodes disposed over a substrate, adjacent anodes defining a well;

adjacent overhang structures, the overhang structures comprising:

a first portion disposed in the well; and

a second portion disposed over the first portion and a portion of an uppermost surface of the anode, the second portion comprising:

overhang extensions extending past lower sidewalls of the first portion; and

an upper surface, the upper surface of the second portion is above the uppermost surface of the anodes, wherein the well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures,

an organic light emitting diode (OLED) material;

a cathode;

an encapsulation layer; and

a protective layer disposed on the substrate within the well and extending over at least a portion of the anodes.

14. A sub-pixel circuit, comprising:

at least two anodes disposed over a substrate, adjacent anodes defining a well;

adjacent overhang structures, the overhang structures comprising:

a first portion disposed in the well; and

a second portion disposed over the first portion and a portion of an uppermost surface of the anode, the second portion comprising:

overhang extensions extending past lower sidewalls of the first portion; and

an upper surface, the upper surface of the second portion is above the uppermost surface of the anodes, wherein the well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures,

an organic light emitting diode (OLED) material, wherein the OLED material is disposed within the trench area contacts the lower sidewalls of the adjacent overhang structures;

a cathode; and

an encapsulation layer.

15. A device, comprising:

a first sub-pixel and a second sub-pixel each comprising:

anodes disposed over a substrate, the anodes comprising an uppermost surface;

a plurality of overhang structures disposed over the substrate alongside opposite sidewalls of the anodes, the plurality of overhang structures comprising:

a first portion comprising a first material, the first portion further comprising a lower sidewall;

second portion disposed over the first portion and a portion of the uppermost surface of the anodes, the second portion comprising a second material, the second portion further comprising an overhang extension extending past the lower sidewall, wherein the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion partially define a trench area;

an organic light emitting diode (OLED) material; and

an encapsulation layer, wherein the encapsulation layer extends under at least a portion of the second portion along the lower sidewall of the first portion, and contacts the bottom surface of the overhang extension of the overhang structures.

16. The device of claim 15 , wherein the first material has a first etch rate and the second material has a second etch rate.

17. The device of claim 16 , wherein the first etch rate and the second etch rate are different.

18. The device of claim 15 , wherein a cathode is disposed over the upper surface of the overhang structures, under the overhang extensions, and within the trench area.

19. The device of claim 15 , wherein the OLED material is disposed over the substrate within the trench area.

20. The device of claim 15 , wherein a first thickness of the OLED material disposed over the anodes and the upper surface of the overhang structures is larger than a second thickness of the OLED material disposed within the trench area.

21. The device of claim 15 , wherein the first material comprises silicon.

22. The device of claim 15 , wherein the second material comprises silicon oxide.

23. The device of claim 15 , further comprising:

a global encapsulation layer disposed over an encapsulation layer.

24. The device of claim 23 , wherein the global encapsulation layer fills the trench area.

25. A device, comprising:

a first sub-pixel and a second sub-pixel each comprising:

anodes disposed over a substrate, the anodes comprising an uppermost surface;

a plurality of overhang structures disposed over the substrate alongside opposite sidewalls of the anodes, the plurality of overhang structures comprising:

a first portion comprising a first material, the first portion further comprising a lower sidewall;

second portion disposed over the first portion and a portion of the uppermost surface of the anodes, the second portion comprising a second material, the second portion further comprising an overhang extension extending past the lower sidewall, wherein the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion partially define a trench area;

an organic light emitting diode (OLED) material; and

a protective layer disposed on the substrate within the trench area and extending over at least a portion of the anodes.

26. A device, comprising:

a first sub-pixel and a second sub-pixel each comprising:

anodes disposed over a substrate, the anodes comprising an uppermost surface;

a plurality of overhang structures disposed over the substrate alongside opposite sidewalls of the anodes, the plurality of overhang structures comprising:

a first portion comprising a first material, the first portion further comprising a lower sidewall;

second portion disposed over the first portion and a portion of the uppermost surface of the anodes, the second portion comprising a second material, the second portion further comprising an overhang extension extending past the lower sidewall, wherein the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion partially define a trench area; and

an organic light emitting diode (OLED) material, wherein the OLED material is disposed within the trench area contacts the lower sidewall of the overhang structures.

27. A sub-pixel circuit, comprising:

a plurality of anodes disposed over a substrate, adjacent anodes defining a well;

adjacent overhang structures, the overhang structures comprising:

a first portion disposed in the well; and

a second portion disposed over the first portion and a portion of an uppermost surface of the anode, the second portion comprising overhang extensions extending past lower sidewalls of the first portion, wherein the well has a trench area defined by the lower sidewalls and a bottom surface of the overhang extensions with a gap between the overhang extensions of the adjacent overhang structures;

an organic light emitting diode (OLED) material; and

an encapsulation layer, wherein the encapsulation layer extends under at least a portion of the second portion along the lower sidewall of the first portion, and contacts the bottom surface of the overhang extension of the overhang structures.

28. The sub-pixel circuit of claim 27 , wherein the first portion further comprises first material having a first etch rate, and the second portion further comprises a second material having a second etch rate, wherein the second material is different than the first material.