Semiconductor device

1. A semiconductor device comprising:

a pad;

an internal logic circuit operable at a power supply voltage;

an output buffer coupled to the pad, and configured to drive an external circuit coupled to the pad based on an output signal from the internal logic circuit;

a protection voltage generating circuit coupled to the pad, and configured to output a protection voltage that is a larger one of a divided voltage and the power supply voltage, the divided voltage being obtained by dividing a voltage applied to the pad; and

a first protection circuit coupled between the internal logic circuit and the output buffer, operable at the protection voltage and configured to protect the internal logic circuit and the output buffer when a voltage greater than the protection voltage is applied to the pad.

2. The semiconductor device according to claim 1 ,

wherein the protection voltage generating comprising:

a first generating circuit configured to output the divided voltage; and

a second generating circuit configured to output the larger one of the divided voltage and the power supply voltage as the protection voltage to an output node, and

wherein the second generating circuit comprising:

a first P-type transistor having a first electrode coupled to the first generating circuit to receive the divided voltage, a second electrode coupled to the output node and a control electrode receiving the power supply voltage; and

a second P-type transistor having a first electrode receiving the power supply voltage, a second electrode coupled to the output node and a control electrode coupled to the first generating circuit to receive the divided voltage.

3. The semiconductor device according to claim 2 , wherein the first generating circuit includes a plurality of resistors serially coupled between the pad and a ground node to which a ground voltage is applied.

4. The semiconductor device according to claim 2 , wherein the first generating circuit includes a plurality of transistors serially diode-connected between the pad and a ground node to which a ground voltage is applied.

5. The semiconductor device according to claim 4 ,

wherein the first generating circuit further includes:

a first switch disposed between the plurality of the transistors, and controlled by a control signal from the internal logic circuit;

a second switch disposed between a divided voltage node outputting the divided voltage and the ground node, and controlled by the control signal, and

wherein a state of the second switch is complementary with a state of the first switch.

6. The semiconductor device according to claim 1 ,

wherein the output buffer includes a third P-type transistor having a first electrode receiving the protection voltage and a second electrode coupled to the pad,

wherein the first protection circuit is configured to supply the output signal from the internal logic circuit to a control electrode of the third P-type transistor, and

wherein, when the voltage larger than the protection voltage is supplied to the pad, the first protection circuit supplies the voltage of the pad with the control electrode of the third P-type transistor.

7. The semiconductor device according to claim 6 , wherein the first protection circuit includes a fourth P-type transistor having a first electrode coupled to the pad, a second electrode coupled to the control electrode of the third P-type transistor and a control electrode receiving the protection voltage.

8. The semiconductor device according to claim 1 ,

wherein the output buffer includes:

a third P-type transistor having a first electrode receiving the power supply voltage;

a fourth P-type transistor having a first electrode coupled to a second electrode of the third P-type transistor and a second electrode coupled to the pad,

wherein the first protection circuit outputs the output signal from the internal logic circuit to a control electrode of the fourth P-type transistor,

wherein the first protection circuit includes an inverter operable at the protection voltage, and

wherein the inverter outputs an inverted signal which has an inverted logic level of a control signal from the internal logic circuit to the control electrode of the third P-type transistor.

9. The semiconductor device according to claim 1 , further comprising:

an input buffer configured to drive the internal logic circuit based on an input signal from the pad; and

a second protection circuit operable at the protection voltage, and configured to protect the input buffer when a voltage larger than the protection voltage is supplied to the pad.

10. The semiconductor device according to claim 9 ,

wherein the second protection circuit includes a first N-type transistor having a first electrode coupled to the pad, a second electrode coupled to an input node of the input buffer and a control electrode receiving the protection voltage.

11. A semiconductor device comprising:

a pad;

an internal logic circuit operable at a power supply voltage;

an input buffer configured to drive the internal logic circuit based on an input signal from the pad;

a protection voltage generating circuit coupled to the pad, and configured to output a protection voltage that is a larger one of a divided voltage and the power supply voltage, the divided voltage being obtained by dividing a voltage applied to the pad; and

a protection circuit coupled between the pad and the input buffer, operable at the protection voltage and configured to protect the internal logic circuit when a voltage greater than the protection voltage is applied to the pad.