Sense circuit to sense two states of a memory cell
A device includes a memory array and a sense circuit coupled with the memory array. The sense circuit includes a sense node coupled with a data line of the memory array. A first sensing path includes a first transistor having a first gate coupled with the sense node. A second sensing path includes a second transistor having a second gate coupled with the sense node. A first threshold voltage of the first transistors differs from a second threshold voltage of the second transistor by a threshold voltage gap.
1. A device comprising:
a memory array; and
a sense circuit coupled with the memory array, wherein the sense circuit comprises:
a sense node coupled with a data line of the memory array;
a first sensing path comprising a first transistor having a first gate coupled with the sense node, the first transistor having a first threshold voltage; and
a second sensing path comprising a second transistor having a second gate coupled with the sense node, wherein a first threshold voltage of the first transistors differs from a second threshold voltage of the second transistor by a threshold voltage gap.
2. The device of claim 1 , wherein a source of each of the first transistor and the second transistor is coupled with ground.
3. The device of claim 1 , wherein each of the first transistor and the second transistor is an n-channel metal oxide semiconductor (NMOS) transistor.
4. The device of claim 3 , wherein an n-channel of the second transistor comprises a different n-type implant dose than an n-channel of the first transistor, the different n-type implant dose to provide the threshold voltage gap.
5. The device of claim 1 , wherein the threshold voltage gap is between 150 and 220 millivolts.
6. The device of claim 1 , wherein each of the first transistor and the second transistor is a p-channel metal oxide semiconductor (PMOS) transistor.
7. The device of claim 6 , wherein a p-channel of the second transistor comprises a different p-type implant dose than a p-channel of the first transistor, the different p-type implant dose to provide the threshold voltage gap.
8. The device of claim 1 , further comprising a boost regulator and a capacitor coupled between the boost regulator and the sense node, wherein:
the boost regulator is to apply a voltage boost to charge the capacitor to an initial voltage level;
the first sensing path is to determine a first state of the sense node of the memory array with respect to the initial voltage level;
the second sensing path is to concurrently determine a second state of the sense node with respect to a combination of the initial voltage level and the threshold voltage gap; and
the sense circuit is to create a histogram from the first state and the second state.
9. The device of claim 8 , wherein the initial voltage level comprises a difference between the first threshold voltage and a gate-source voltage drop of the first transistor.
10. A device comprising:
a memory array; and
a sense circuit coupled with the memory array, wherein the sense circuit comprises:
a sense node coupled with a data line of the memory array;
a first sensing path comprising a first transistor having a first gate coupled with the sense node, the first transistor defined by an inner threshold voltage;
a second sensing path comprising a second transistor having a second gate coupled with the sense node, the second transistor defined by the inner threshold voltage; and
a voltage source coupled with a source of the second transistor to change a trip point of the second transistor by a threshold voltage gap.
11. The device of claim 10 , wherein a source of the first transistor is coupled with ground and the voltage source is coupled between the source of the second transistor and the ground.
12. The device of claim 10 , wherein each of the first transistor and the second transistor is an n-channel metal oxide semiconductor (NMOS) transistor.
13. The device of claim 10 , wherein the voltage source is between 150 and 220 millivolts.
14. The device of claim 10 , wherein each of the first transistor and the second transistor is a p-channel metal oxide semiconductor (PMOS) transistor.
15. The device of claim 10 , further comprising a boost regulator and a capacitor coupled between the boost regulator and the sense node, wherein:
the boost regulator is to apply a voltage boost to charge the capacitor to an initial voltage level;
the first sensing path is to determine a first state of the sense node of the memory array with respect to the initial voltage level;
the second sensing path is to concurrently determine a second state of the sense node with respect to a combination of the initial voltage level and the threshold voltage gap; and
the sense circuit is to create a histogram from the first state and the second state.
16. The device of claim 15 , wherein the initial voltage level comprises a difference between the threshold voltage and a gate-source voltage drop of the first transistor.
17. A method comprising:
capacitively boosting a sense node of a sense circuit to an initial voltage level, wherein the sense node is coupled with a data line of a memory array of a memory device;
determining, by a first sensing path of the sense circuit with respect to the initial voltage level, a first state of the sense node;
concurrently determining, by a second sensing path of the sense circuit with respect to a combination of the initial voltage level and a threshold voltage gap, a second state of the sense node; and
creating a histogram from the first state and the second state.
18. The method of claim 17 , further comprising analyzing a set of histograms, which comprise the histogram, to determine a local minima between two adjacent threshold voltage distributions within a memory cell of the memory array.
19. The method of claim 17 , further comprising:
employing a first transistor in the first sensing path; and
employing a second transistor in the second sensing path, wherein a first threshold voltage of the first transistor differs from a second threshold voltage of the second transistor by the threshold voltage gap.
20. The method of claim 17 , further comprising:
employing a first transistor in the first sensing path, the first transistor having a threshold voltage;
employing a second transistor in the second sensing path, the second transistor having a threshold voltage; and
employing a voltage source coupled with a source of the second transistor to provide a different trip point of the second transistor compared to the first transistor, the different trip point corresponding to the threshold voltage gap.