Gas analyzer apparatus

1. A gas analyzer apparatus comprising:

a sample chamber which is equipped with a dielectric wall structure and into which only a sample gas from a plasma processing chamber to be analyzed is introduced;

an exhaust system configured to depressurize the sample chamber at a negative pressure;

a pressure controller between the sample chamber and the exhaust system;

a gas input unit configured to introduce only the sample gas from the plasma processing chamber into the depressurized sample chamber, wherein the gas input unit includes a flow control valve;

a plasma generation mechanism that generates plasma in the sample chamber that has been depressurized, the plasma generation mechanism includes an electric field and/or a magnetic field applied through the dielectric wall structure; and

an analyzer unit that analyzes the sample gas via the generated plasma.

2. The gas analyzer apparatus according to claim 1 ,

wherein the flow control valve is configured to control flow of the sample from the processing unit into the sample chamber.

3. The gas analyzer apparatus according to claim 1 ,

wherein the dielectric wall structure includes at least one of quartz, aluminum oxide, and silicon nitride.

4. The gas analyzer apparatus according to claim 1 ,

wherein the plasma generation mechanism includes a mechanism for generating plasma using at least one of inductively coupled plasma, dielectric barrier discharge, and electron cyclotron resonance.

5. The gas analyzer apparatus according to claim 1 ,

wherein the sample chamber has a total length of 1 to 100 mm and a diameter of 1 to 100 mm.

6. The gas analyzer apparatus according to claim 1 ,

wherein the analyzer unit includes:

a filter unit that filters ionized gas present in the plasma; and

a detector unit that detects filtered ions.

7. The gas analyzer apparatus according to claim 6 ,

further comprising an energy filter disposed between the filter unit and the sample chamber.

8. A process monitoring apparatus comprising the gas analyzer apparatus according to claim 1 .

9. A system comprising:

the gas analyzer apparatus according to claim 1 ; and

a processing chamber in which a plasma process is carried out and from which the sample gas is supplied to the gas analyzer apparatus.

10. The system according to claim 9 ,

further comprising a process control unit that controls at least one plasma process carried out in the processing chamber based on a measurement result of the gas analyzer apparatus.

11. The system according to claim 10 ,

wherein the process control unit includes a unit that determines an endpoint of the at least one plasma process from a measurement result provided by the gas analyzer apparatus for a by-product of the at least one plasma process.

12. The system according to claim 9 ,

wherein the sample gas supplied from the plasma process includes components that are corrosive.

13. The gas analyzer apparatus according to claim 1 , wherein the gas input unit is configured to introduce only the sample gas from the plasma process into the sample chamber without an additional gas for assisting discharge.

14. A control method of a system including a processing chamber that carries out a plasma process,

wherein the system includes a gas analyzer apparatus including a sample chamber that is different from the processing chamber and into which only a sample gas from the processing chamber is introduced, and

the control method comprises:

depressurizing the sample chamber with an exhaust system;

introducing only the sample gas into the depressurized sample chamber from the processing chamber with a flow controller arranged between the sample chamber and the processing chamber;

generating a plasma in the sample chamber;

analyzing the sample gas by the gas analyzer via the plasma; and

controlling the plasma process carried out in the processing chamber based on a measurement result of the gas analyzer apparatus.

15. The control method according to claim 14 ,

wherein the controlling the plasma process includes determining an endpoint of at least one plasma process from a measurement result provided by the gas analyzer apparatus for a by-product of the at least one plasma process.

16. The control method according to claim 15 ,

wherein the at least one plasma process includes at least one of etching, film forming, and cleaning.

17. The control method according to claim 14 ,

further comprising generating plasma in the sample chamber independently of the processing chamber.

18. The control method according to claim 14 , wherein only the sample gas to be measured is introduced into the sample chamber without an additional gas for assisting discharge.

19. A gas analyzer apparatus for monitoring a process in a processing chamber, the gas analyzer apparatus comprising:

a sample chamber equipped with a dielectric wall structure and into which only a sample gas from the processing chamber to be analyzed is introduced;

an exhaust system configured to depressurize the sample chamber at a negative pressure;

a gas input unit configured to introduce only the sample gas from the process in the processing chamber as the sample gas into the depressurized sample chamber, wherein the gas input unit includes a flow control valve;

a plasma generation mechanism that generates plasma in the sample chamber that has been depressurized, using an electric field or a magnetic field applied through the dielectric wall structure; and

an analyzer unit that analyzes the sample gas via the generated plasma.