Monolithic microwave integrated circuit (MMIC) with embedded transmission line (ETL) ground shielding
A monolithic microwave integrated circuit (MMIC) with embedded transmission line (ETL) ground shielding is provided. In an exemplary aspect, an ETL MMIC according to this disclosure includes a MMIC substrate having an active side, an ETL dielectric layer covering the active side, and a topside ground plane over the ETL dielectric layer. The active side includes one or more transmission lines or other components which may undesirably couple to metal signal lines (e.g., package metal interconnects) in an external circuit assembly. The topside ground plane in the ETL MMIC provides shielding to reduce such electromagnetic coupling. The topside ground plane can also facilitate improved thermal paths for heat dissipation, such as through a redistribution layer (RDL) to a next higher assembly (NHA) and/or through a backside ground plane of the MMIC substrate.
1. A monolithic microwave integrated circuit (MMIC) package, comprising an embedded transmission line (ETL) MMIC, the ETL MMIC comprising:
a MMIC substrate having an active side comprising one or more active elements;
a transmission line coupled to the active side of the MMIC substrate;
an ETL dielectric layer disposed on the active side of the MMIC substrate such that the transmission line is embedded within the ETL dielectric layer; and
a topside ground plane disposed on a surface of the ETL dielectric layer, the surface of the ETL dielectric layer opposite the active side of the MMIC substrate.
2. The MMIC package of claim 1 , further comprising a redistribution layer (RDL) attached to the ETL MMIC, the RDL comprising a signal line connected to the transmission line on the MMIC substrate.
3. The MMIC package of claim 2 , wherein the ETL MMIC further comprises a via through the ETL dielectric layer, the via connecting the signal line in the RDL to the transmission line on the MMIC substrate.
4. The MMIC package of claim 2 , wherein the topside ground plane serves as a ground reference for the signal line in the RDL.
5. The MMIC package of claim 2 , further comprising an interconnection layer attached to the RDL and configured to electrically connect the signal line in the RDL to a next higher assembly.
6. The MMIC package of claim 2 , wherein the RDL comprises a multilayer laminate.
7. The MMIC package of claim 1 , wherein the topside ground plane serves as a ground reference for the transmission line on the MMIC substrate.
8. The MMIC package of claim 1 , wherein the ETL MMIC provides a thermal conduction path from the active side of the MMIC substrate to a next higher assembly.
9. The MMIC package of claim 1 , further comprising a fine pitch ball grid array (FBGA) attached to the ETL MMIC, the FBGA comprising a signal line connected to the transmission line on the MMIC substrate.
10. The MMIC package of claim 1 , wherein the MMIC substrate further has:
a backside ground plane deposited on at least a portion of a backside of the MMIC substrate opposite the active side; and
a plurality of vias through the MMIC substrate connecting the backside ground plane to ground conductors on the active side.
11. The MMIC package of claim 10 , further comprising an overmold layer at least partially surrounding the MMIC substrate.
12. The MMIC package of claim 11 , wherein the overmold layer at least partially surrounds the MMIC substrate, the ETL dielectric layer, and the topside ground plane.
13. The MMIC package of claim 11 , further comprising a heat exchanger attached to the overmold layer and the backside ground plane;
wherein the plurality of vias and the backside ground plane provide thermal conduction from the active side to the heat exchanger.
14. The MMIC package of claim 1 , wherein the ETL dielectric layer comprises at least one of polyimide, polynorbornenes, benzocyclobutene (BCB), polytetrafluoroethylene (PTFE), hydrogen silsesquioxane (HSQ), or methylsilsesquioxane (MSQ).
15. The MMIC package of claim 1 , wherein the ETL dielectric layer comprises at least one of silicon dioxide (SiO 2 ), silicon nitride (SiN), silicon carbide (SiC), a carbon doped oxide (SiCOH), aluminum oxide (Al 2 O 3 ), zinc oxide (ZnO), gallium oxide (GaO), or boron nitride (BN).
16. The MMIC package of claim 1 , wherein the topside ground plane shields the transmission line from an external circuit assembly.
17. The MMIC package of claim 1 , wherein the topside ground plane reduces electromagnetic coupling between the transmission line of the active side and an external circuit assembly attached to the topside ground plane.
18. The MMIC package of claim 11 , further comprising:
a heat exchanger over the overmold layer; and
one or more conductive regions through the overmold layer between the heat exchanger and the backside ground plane, the one or more conductive regions connecting the heat exchanger to the backside ground plane.