Semiconductor device assembly and method therefor
A method of forming a semiconductor device includes attaching a semiconductor die to a flag of a leadframe and forming a conductive connector over a portion of the semiconductor die and a portion of the flag. A conductive connection between a first bond pad of the semiconductor die and the flag is formed by way of the conductive connector. A second bond pad of the semiconductor die is connected to a conductive lead of the plurality by way of a bond wire.
1. A semiconductor device comprising:
a leadframe having a plurality of conductive leads and a flag;
a semiconductor die attached to the flag of the leadframe;
a conductive connector applied over a portion of the semiconductor die and a portion of the flag, a conductive connection between a first bond pad of the semiconductor die and the flag formed by way of the conductive connector; and
a second bond pad of the semiconductor die connected to a conductive lead of the plurality by way of a bond wire.
2. The semiconductor device of claim 1 , further comprising a die attach material disposed between the semiconductor die and the flag.
3. The semiconductor device of claim 2 , wherein the die attach material is characterized as an electrically conductive die attach material having a melting point.
4. The semiconductor device of claim 3 , wherein the conductive connector is characterized as a solder-based material having a melting point lower than the melting point of the die attach material.
5. The semiconductor device of claim 3 , wherein a portion of the die attach material extends beyond the perimeter of the semiconductor die, the conductive connector directly contacting the die attach material.
6. The semiconductor device of claim 2 , further comprising a conductive fillet formed at the semiconductor die to flag interface, the conductive connector directly contacting the conductive fillet.
7. The semiconductor device of claim 6 , wherein the conductive fillet is formed from a material different from the die attach material.
8. The semiconductor device of claim 1 , wherein the conductive connector applied over the portion of the semiconductor die and the portion of the flag is formed by way of a 3-D printing process.
9. The semiconductor device of claim 1 , wherein the leadframe is characterized as a quad flat no-lead (QFN) type package leadframe.
10. A method comprising:
attaching a semiconductor die to a flag of a leadframe;
forming a conductive connector over a portion of the semiconductor die and a portion of the flag, a conductive connection between a first bond pad of the semiconductor die and the flag being formed by way of the conductive connector; and
connecting by way of a bond wire a second bond pad of the semiconductor die to a conductive lead of the leadframe.
11. The method of claim 10 , further comprising encapsulating with a molding compound the semiconductor die, a portion of the leadframe, the conductive connector, and the bond wire.
12. The method of claim 10 , wherein attaching the semiconductor die includes attaching the semiconductor die to the flag by way of a die attach material disposed between the semiconductor die and the flag.
13. The method of claim 12 , wherein the die attach material is characterized as an electrically conductive die attach material having a melting point.
14. The method of claim 13 , wherein the conductive connector is characterized as a solder-based material having a melting point lower than the melting point of the die attach material.
15. The method of claim 10 , further comprising a conductive fillet formed at the semiconductor die to flag interface, the conductive connector directly contacting the conductive fillet.
16. The method of claim 15 , wherein the conductive fillet is formed from a material different from the die attach material.
17. A method comprising:
attaching a semiconductor die to a flag of a leadframe;
forming a conductive connector over a portion of the semiconductor die and a portion of the flag, a conductive connection between a first bond pad of the semiconductor die and the flag being formed by way of the conductive connector; and
connecting by way of a bond wire a second bond pad of the semiconductor die to a conductive lead of the leadframe, the second bond pad and the first bond pad being formed at the same surface of the semiconductor die.
18. The method of claim 17 , wherein the flag is configured for connection to a ground voltage supply and wherein the first bond pad is characterized as a ground pad.
19. The method of claim 17 , further comprising forming a conductive fillet at the semiconductor die to flag interface, the conductive fillet formed from a material different from the die attach material, the conductive connector directly contacting the conductive fillet.
20. The method of claim 17 , wherein attaching the semiconductor die includes attaching the semiconductor to the flag by way of an electrically conductive die attach material having a melting point, and wherein the conductive connector is characterized as a solder-based material having a melting point lower than the melting point of the die attach material.