Nanosheet transistors with inner airgaps
A method is presented for constructing a nanosheet transistor. The method includes forming a nanosheet stack including alternating layers of a first material and a second material over a substrate, forming a dummy gate over the nanosheet stack, forming sacrificial spacers adjacent the dummy gate, and selectively etching the alternating layers of the first material to define gaps between the alternating layers of the second material. The method further includes filling the gaps with inner spacers, epitaxially growing source/drain regions adjacent the nanosheet stack, selectively removing the sacrificial spacers and the inner spacers to define cavities, and filling the cavities with a spacer material to define first airgaps adjacent the dummy gate and second airgaps adjacent the etched alternating layers of the first material.
1. A nanosheet transistor comprising:
a nanosheet stack including alternating layers of a recessed first material and a second material;
source/drain regions disposed adjacent the nanosheet stack;
a conductive material disposed over the source/drain regions;
first airgaps defined between the source/drain regions and the recessed alternating layers of the first material, the first airgaps enclosed by a single spacer; and
second airgaps defined adjacent the conductive material,
wherein the first airgaps are vertically aligned with the second airgaps.
2. The nanosheet transistor of claim 1 , wherein the second airgaps are larger than the first airgaps.
3. The nanosheet transistor of claim 1 , wherein the first airgaps are oval-shaped.
4. The nanosheet transistor of claim 1 , wherein the second airgaps are oval-shaped.
5. The nanosheet transistor of claim 1 , wherein the first airgaps are horizontally aligned with the alternating layers of the recessed first material.
6. The nanosheet transistor of claim 1 , wherein the first and second airgaps are perpendicular to a substrate.
7. The nanosheet transistor of claim 1 , wherein the first airgaps are formed within the nanosheet stack.
8. The nanosheet transistor of claim 1 , wherein the second airgaps are formed over the nanosheet stack.
9. The nanosheet transistor of claim 1 , wherein the second airgaps occupy a space greater that a space occupied by the first airgaps.
10. The nanosheet transistor of claim 1 , wherein the source/drain regions directly contact an entire length of the nanosheet stack.
11. A nanosheet transistor comprising:
a nanosheet stack including alternating layers of a recessed first material and a second material;
first airgaps defined between the recessed alternating layers of the first material, the first airgaps enclosed by a single spacer; and
second airgaps defined adjacent a conductive material,
wherein the first airgaps are vertically aligned with the second airgaps.
12. The nanosheet transistor of claim 11 , wherein source/drain regions are disposed adjacent the nanosheet stack.
13. The nanosheet transistor of claim 12 , wherein the conductive material is disposed over the source/drain regions.
14. The nanosheet transistor of claim 11 , wherein the second airgaps are larger than the first airgaps.
15. The nanosheet transistor of claim 11 , wherein the first airgaps are oval-shaped and the second airgaps are oval-shaped.
16. The nanosheet transistor of claim 11 , wherein the first airgaps are horizontally aligned with the alternating layers of the recessed first material.
17. The nanosheet transistor of claim 11 , wherein the first and second airgaps are perpendicular to a substrate.
18. The nanosheet transistor of claim 11 , wherein the first airgaps are formed within the nanosheet stack.
19. The nanosheet transistor of claim 11 , wherein the second airgaps are formed over the nanosheet stack.
20. The nanosheet transistor of claim 11 , wherein the second airgaps occupy a space greater that a space occupied by the first airgaps.