Organic light emitting diode having n-type host with narrow band gap and organic light emitting display device including the same
The present disclosure provides an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and an emitting material layer. The emitting material layer includes a p-type host, a n-type host and a phosphorescent dopant and positioned between the first electrode and the second electrode, wherein a first energy level of a HOMO of the p-type host is equal to or lower than a second energy level of a HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3 eV and smaller than 0.5 eV.
1. An organic light emitting diode, comprising:
a first electrode;
a second electrode facing the first electrode; and
an emitting material layer including a p-type host, a n-type host and a phosphorescent dopant, the emitting material layer positioned between the first electrode and the second electrode,
wherein the n-type host is represented by Formula 2-1 or Formula 2-2:
wherein each of R 1 to R 3 in Formula 2-1 or Formula 2-2 is independently selected from the group consisting of protium, deuterium, C1 to C10 alkyl, C6 to C30 aryl and C5 to C30 heteroaryl, and m is an integer of 0 to 4;
wherein the p-type host is represented by Formula 1-1 or Formula 1-2:
wherein each of X and Y is independently selected from the group consisting of oxygen and sulfur, and Z is N or CR 15 ,
wherein each of R 1 to R 15 in Formula 1-1 or Formula 1-2 is independently selected from the group consisting of protium, deuterium, alkylsilyl, arylsilyl, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C30 aryl, C5 to C30 heteroaryl, alkylamine, heteroarylamine and arylamine, or adjacent two of R 1 to R 15 may form a fused ring;
wherein the phosphorescent dopant is represented by Formula 3:
wherein each of R 1 to R 16 in Formula 3 is independently selected from the group consisting of protium, deuterium, halogen, cyano, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C30 aryl and C5 to C30 heteroaryl, or adjacent two of R 1 to R 16 may form a fused ring, and n is an integer between 1 and 3.
2. The organic light emitting diode of claim 1 , wherein a percentage by weight of the n-type host is equal to or greater than a percentage by weight of the p-type host.
3. The organic light emitting diode of claim 1 , wherein the phosphorescent dopant is 1% to 5% by weight in the emitting material layer.
4. The organic light emitting diode of claim 1 , wherein a first energy level of a lowest unoccupied molecular orbital (LUMO) of the p-type host is higher than a second energy level of the LUMO of the n-type host.
5. The organic light emitting diode of claim 4 , wherein a third energy level of the LUMO of the phosphorescent dopant is lower than the first energy level of the LUMO and is higher than the second energy level of the LUMO.
6. The organic light emitting diode of claim 1 , wherein a third energy level of the HOMO of the phosphorescent dopant is equal to or higher than the second energy level of the HOMO.
7. The organic light emitting diode of claim 1 , wherein the n-type host is a compound selected from:
8. The organic light emitting diode of claim 1 , wherein a first energy level of a highest occupied molecular orbital (HOMO) of the p-type host is equal to or lower than a second energy level of the HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3eV and smaller than 0.5eV.
9. The organic light emitting diode of claim 1 , wherein the p-type host is represented by Formula 1-2.
10. An organic light emitting display device, comprising:
a substrate; and
an organic light emitting diode on the substrate and including a first electrode, a second electrode facing the first electrode, and an emitting material layer including a p-type host, a n-type host and a phosphorescent dopant, the emitting material layer positioned between the first electrode and the second electrode,
wherein the n-type host is represented by Formula 2-1 or Formula 2-2:
wherein each of R 1 to R 3 in Formula 2-1 or Formula 2-2 is independently selected from the group consisting of protium, deuterium, C1 to C10 alkyl, C6 to C30 aryl and C5 to C30 heteroaryl, and m is an integer of 0 to 4;
wherein the p-type host is represented by Formula 1-1 or Formula 1-2:
wherein each of X and Y is independently selected from the group consisting of oxygen and sulfur, and Z is N or CR 15 ,
wherein each of R 1 to R 15 in Formula 1-1 or Formula 1-2 is independently selected from the group consisting of protium, deuterium, alkylsilyl, arylsilyl, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C30 aryl, C5 to C30 heteroaryl, alkylamine, heteroarylamine and arylamine, or adjacent two of R 1 to R 15 may form a fused ring;
wherein the phosphorescent dopant is represented by Formula 3:
wherein each of R 1 to R 16 in Formula 3 is independently selected from the group consisting of protium, deuterium, halogen, cyano, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C30 aryl and C5 to C30 heteroaryl, or adjacent two of R 1 to R 16 may form a fused ring, and n is an integer between 1 and 3.
11. The organic light emitting display device of claim 10 , wherein a percentage by weight of the n-type host is equal to or greater than a percentage by weight of the p-type host.
12. The organic light emitting display device of claim 10 , wherein the phosphorescent dopant is 1% to 5% by weight in the emitting material layer.
13. The organic light emitting display device of claim 10 , wherein a first energy level of a lowest unoccupied molecular orbital (LUMO) of the p-type host is higher than a second energy level of the LUMO of the n-type host.
14. The organic light emitting display device of claim 13 , wherein a third energy level of the LUMO of the phosphorescent dopant is lower than the first energy level of the LUMO of the p-type host and is higher than the second energy level of the LUMO of the n-type host.
15. The organic light emitting display device of claim 10 , wherein a third energy level of the HOMO of the phosphorescent dopant is equal to or higher than the second energy level of the HOMO of the n-type host.
16. The organic light emitting diode of claim 10 , wherein the n-type host is a compound selected from:
17. The organic light emitting display device of claim 10 , wherein a first energy level of a highest occupied molecular orbital (HOMO) of the p-type host is equal to or lower than a second energy level of the HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3 eV and smaller than 0.5 eV.
18. The organic light emitting display device of claim 10 , wherein the p-type host is represented by Formula 1-2.