IP Library Granted Patent US 11,558,014
Granted Patent B2
US 11,558,014 · App. 17/323,505 · Granted Jan 17, 2023

Power amplifier circuit

Inventors: Satoshi Tanaka (Kyoto, JP); Satoshi Arayashiki (Kyoto, JP); Satoshi Goto (Kyoto, JP); Yusuke Tanaka (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F1/0216H03F3/21H03F2200/451H04W88/02
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Quick Facts
Patent No.
US 11,558,014
App. No.
17/323,505
Granted
Jan 17, 2023
Kind
B2
Abstract

A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Claims (34)

1. A power amplifier circuit configured to amplify a first high-frequency differential signal that includes a first high-frequency signal of positive polarity and a second high-frequency signal of negative polarity, and to output a second high-frequency differential signal that includes a third high-frequency signal of negative polarity and a fourth high-frequency signal of positive polarity, the power amplifier circuit comprising:

a first transistor having a first terminal, a second terminal, and a third terminal, the first high-frequency signal being input to the first terminal, and the third high-frequency signal being output from the second terminal;

a second transistor having a fourth terminal, a fifth terminal, and a sixth terminal, the second high-frequency signal being input to the fourth terminal, and the fourth high-frequency signal being output from the fifth terminal;

a first capacitance circuit electrically connected between the fifth terminal of the second transistor and the first terminal of the first transistor; and

a second capacitance circuit electrically connected between the second terminal of the first transistor and the fourth terminal of the second transistor,

wherein the first capacitance circuit comprises a third transistor having a seventh terminal, an eighth terminal, and a ninth terminal, the eighth terminal being electrically connected to the fifth terminal of the second transistor, and the seventh terminal being electrically connected to the first terminal of the first transistor,

wherein the second capacitance circuit comprises a fourth transistor having a tenth terminal, an eleventh terminal, and a twelfth terminal, the eleventh terminal being electrically connected to the second terminal of the first transistor and the tenth terminal being electrically connected to the fourth terminal of the second transistor,

wherein the ninth terminal of the third transistor is electrically connected to the seventh terminal of the third transistor, and

wherein the twelfth terminal of the fourth transistor is electrically connected to the tenth terminal of the fourth transistor.

2. The power amplifier circuit according to claim 1 , wherein each of the first transistor and the second transistor is a field effect transistor.

3. The power amplifier circuit according to claim 1 , wherein each of the first transistor and the second transistor is a heterojunction bipolar transistor.

4. The power amplifier circuit according to claim 1 , wherein each of the third transistor and the fourth transistor is a heterojunction bipolar transistor.

5. The power amplifier circuit according to claim 1 , wherein the third terminal of the first transistor and the sixth terminal of the second transistor are electrically connected to a common potential.

6. The power amplifier circuit according to claim 1 ,

wherein a capacitance between the seventh terminal and the eighth terminal of the third transistor is equal to a capacitance between the first terminal and the second terminal of the first transistor, and

wherein a capacitance between the tenth terminal and the eleventh terminal of the fourth transistor is equal to a capacitance between the fourth terminal and the fifth terminal of the second transistor.

7. The power amplifier circuit according to claim 1 ,

wherein a size of the third transistor is equal to a size of the first transistor, and

wherein a size of the fourth transistor is equal to a size of the second transistor.

8. A power amplifier circuit configured to amplify a first high-frequency differential signal that includes a first high-frequency signal of positive polarity and a second high-frequency signal of negative polarity, and to output a second high-frequency differential signal that includes a third high-frequency signal of negative polarity and a fourth high-frequency signal of positive polarity, the power amplifier circuit comprising:

a first transistor having a first terminal, a second terminal, and a third terminal, the first high-frequency signal being input to the first terminal or the third high-frequency signal being output from the second terminal;

a second transistor having a fourth terminal, a fifth terminal, and a sixth terminal, the second high-frequency signal being input to the fourth terminal, or the fourth high-frequency signal being output from the fifth terminal;

a first capacitance circuit electrically connected between the fifth terminal of the second transistor and the first terminal of the first transistor; and

a second capacitance circuit electrically connected between the second terminal of the first transistor and the fourth terminal of the second transistor,

wherein the first capacitance circuit comprises a third transistor having a seventh terminal, an eighth terminal, and a ninth terminal, the eighth terminal being electrically connected to the fifth terminal of the second transistor, and the seventh terminal being electrically connected to the first terminal of the first transistor,

wherein the second capacitance circuit comprises a fourth transistor having a tenth terminal, an eleventh terminal, and a twelfth terminal, the eleventh terminal being electrically connected to the second terminal of the first transistor, and the tenth terminal being electrically connected to the fourth terminal of the second transistor,

wherein the ninth terminal of the third transistor is electrically connected to the seventh terminal of the third transistor, and

wherein the twelfth terminal of the fourth transistor is electrically connected to the tenth terminal of the fourth transistor.

9. The power amplifier circuit according to claim 8 , wherein each of the first transistor and the second transistor is a field effect transistor.

10. The power amplifier circuit according to claim 8 , wherein each of the first transistor and the second transistor is a heterojunction bipolar transistor.

11. The power amplifier circuit according to claim 8 , wherein each of the third transistor and the fourth transistor is a heterojunction bipolar transistor.

12. The power amplifier circuit according to claim 8 ,

wherein a size of the third transistor is equal to a size of the first transistor, and

wherein a size of the fourth transistor is equal to a size of the second transistor.

Priority Claims (1)
JP JP2018-187387 · Oct 2, 2018 · national
Continuity (2)
Continuation 16589369 · Oct 1, 2019
Related Publication 20210273611A1 · Sep 2, 2021
Cited By (6)
US 12,413,147 US 12,573,993 US 12,592,668 US 12,683,561 US 12,683,636 US 12,707,396