Process and apparatus for removal of impurities from chlorosilanes
A process for removal of impurities, in particular of dopants, from chlorosilanes which includes the following steps: (a) heating a deposition surface (3); (b) contacting the heated deposition surface (3) with at least one gaseous chlorosilane mixture, the gaseous chlorosilane mixture including at least one chlorosilane and at least one impurity, in particular at least one dopant; (c) at least partially removing the impurity, in particular the dopant, by forming polycrystalline silicon depositions on the deposition surface (3), the polycrystalline silicon depositions being enriched with the impurity, in particular with the dopant; (d) discharging the purified gaseous chlorosilane mixture; (e) contacting the heated deposition surface (3) with an etching gas to return the polycrystalline silicon depositions and the impurity, in particular the dopant, into the gas phase to form a gaseous etching gas mixture; and (f) discharging the gaseous etching gas mixture.
1. A process for removal of at least one impurity from chlorosilanes, the process comprising the steps of:
(a) heating a deposition surface ( 3 );
(b) contacting at least one gaseous chlorosilane mixture with the heated deposition surface ( 3 ), said gaseous chlorosilane mixture comprising at least one chlorosilane and at least one impurity;
(c) at least partially of the at least one impurity by formation of polycrystalline silicon deposits on the deposition surface ( 3 ), said polycrystalline silicon deposits being enriched with the impurity;
(d) discharging the purified, gaseous chlorosilane mixture;
(e) contacting an etching gas with the heated deposition surface ( 3 ) to return the polycrystalline silicon deposits and the at least one impurity into the gas phase to form a gaseous etching gas mixture; and
(f) discharging the gaseous etching gas mixture.
2. The process as claimed in claim 1 , further comprising
in step (b) carrying out the contacting of the gaseous chlorosilane mixture and the deposition surface ( 3 ) in the presence of a process gas.
3. The process as claimed in claim 2 , wherein
the process gas is hydrogen.
4. The process as claimed in claim 1 , wherein
the purified, gaseous chlorosilane mixture discharged in step (d) has a residual concentration of the impurity of less than 1000 ppb.
5. The process as claimed in claim 1 , wherein
the chlorosilane comprises at least one of silicon tetrachloride, trichlorosilane, or dichlorosilane.
6. The process as claimed in claim 1 , further comprising
carrying out the formation of polycrystalline silicon deposits at the deposition surface (3) at a pressure of 0.8 to 1.2 bar.
7. The process as claimed in claim 1 , further comprising
in step (a) heating the deposition surface ( 3 ) to a temperature of 600° C. to 1000° C.
8. The process as claimed in claim 1 , wherein
the etching gas is hydrogen chloride.
9. The process of claim 1 , wherein the at least one impurity is a dopant.