Substrate processing chamber
Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.
1. A process chamber, comprising:
a lid assembly;
a chamber body coupled to the lid assembly by a spacer, the spacer and the chamber body defining a resonance cavity, the chamber body sealed to the spacer by an O-ring, wherein the spacer includes a liner surrounding the resonance cavity, wherein the liner has a cylindrical wall, and wherein an upper portion of the cylindrical wall has a greater thickness than a lower portion of the cylindrical wall;
a rotatable magnet assembly coupled to the spacer outside of the resonance cavity; and
a substrate support disposed and movable within the resonance cavity, wherein the substrate support is coupled to a facilities cable that flexes based on operation of an actuator coupled to the substrate support.
2. The process chamber of claim 1 , wherein the lid assembly comprises a heat exchanger.
3. The process chamber of claim 1 , wherein the spacer includes a plurality of heater elements.
4. The process chamber of claim 1 , wherein the rotatable magnet assembly comprises a plurality of magnets coupled to a magnet actuator.
5. The process chamber of claim 1 , further comprising a variable pressure system coupled to the chamber body.
6. The process chamber of claim 5 , wherein the variable pressure system comprises a first pump and a second pump.
7. The process chamber of claim 1 , wherein the facilities cable comprises a single piece conductor.
8. A process chamber, comprising:
a lid assembly comprising a showerhead;
a chamber body coupled to the lid assembly by a spacer, the spacer and the chamber body defining a resonance cavity, the chamber body sealed to the spacer by an O-ring;
a liner disposed within an inner diameter of the spacer, wherein the liner has a cylindrical wall, and wherein an upper portion of the cylindrical wall has a greater thickness than a lower portion of the cylindrical wall;
a magnet assembly coupled to the spacer outside of the resonance cavity; and
a substrate support disposed within the resonance cavity, wherein the substrate support is coupled to a facilities cable and comprises an electrostatic chuck having a puck including a plurality of electrodes.
9. The process chamber of claim 8 , wherein the facilities cable comprises a single piece conductor.
10. The process chamber of claim 8 , wherein the spacer includes a plurality of heater elements.
11. The process chamber of claim 8 , wherein the magnet assembly comprises a plurality of magnets coupled to a magnet actuator configured to move each of the magnets vertically relative to a height of the resonance cavity.
12. A process chamber, comprising:
a lid assembly comprising a showerhead;
a chamber body coupled to the lid assembly by a spacer, the spacer and the chamber body defining a resonance cavity, the chamber body sealed to the spacer by an O-ring, wherein the spacer includes a liner surrounding the resonance cavity, wherein the liner has a cylindrical wall, and wherein an upper portion of the cylindrical wall has a greater thickness than a lower portion of the cylindrical wall;
a magnet assembly coupled to the spacer outside of the resonance cavity; and
a substrate support movably disposed within the resonance cavity, wherein the substrate support is coupled to a facilities cable that includes a single piece conductor including a bend, and wherein the substrate support comprises an electrostatic chuck having a puck including a plurality of electrodes.
13. The process chamber of claim 12 , wherein the spacer includes a plurality of heater elements.
14. The process chamber of claim 12 , wherein the magnet assembly comprises a plurality of magnets coupled to a magnet actuator configured to move each of the magnets vertically relative to a height of the resonance cavity.