Semiconductor device with reduced vertical height
A semiconductor device includes a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure including a channel layer and a gate insulating layer; a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction; a plurality of first gate electrodes surrounding the channel structure; and a plurality of second gate electrodes surrounding the channel structure. Between adjacent insulating layers from among the plurality of insulating layers are arranged a first gate electrode from among the plurality of first gate electrodes spaced apart along the first direction from a second gate electrode from among the plurality of second gate electrodes.
1. A semiconductor device comprising:
a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure comprising a channel layer and a gate insulating layer;
a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction;
a plurality of first gate electrodes surrounding the channel structure;
a plurality of second gate electrodes surrounding the channel structure; and
a cover insulating layer structure disposed between the first gate electrode and the second gate electrode, wherein:
a first gate electrode, among the plurality of first gate electrodes, and a second gate electrode, among the plurality of second gate electrodes, are disposed between immediately-adjacent insulating layers among the plurality of insulating layers, and
the first gate electrode and the second gate electrode are spaced apart along the first direction,
the cover insulating layer structure comprises:
a first cover insulating layer surrounding a portion of a sidewall of the channel structure between the first gate electrode and the second gate electrode;
a second cover insulating layer arranged as surrounding an edge portion of the first gate electrode and an edge portion of the second gate electrode both adjacent to a word line cut region, and as between the first gate electrode and the second gate electrode; and
an air space disposed between the first cover insulating layer and the second cover insulating layer,
the first gate electrode comprises a first conductive barrier layer and a first metal layer that are sequentially arranged on a top surface of a lower insulating layer from among the immediately-adjacent insulating layers, and
the first metal layer contacts the first cover insulating layer and the second cover insulating layer, and the first conductive barrier layer does not contact the first cover insulating layer.
2. The semiconductor device of claim 1 , wherein:
the first gate electrode, a portion of the cover insulating layer structure, and the second gate electrode are sequentially arranged in the first direction.
3. The semiconductor device of claim 1 , wherein
the second gate electrode comprises a second conductive barrier layer and a second metal layer that are sequentially arranged on a bottom surface of an upper insulating layer from among the immediately-adjacent insulating layers.
4. The semiconductor device of claim 1 , wherein:
the gate insulating layer surrounds an outer wall of the channel layer and extends in the first direction, and
the gate insulating layer comprises a sidewall, and a plurality of first protrusions formed on the sidewall of the gate insulating layer and protruding outwardly.
5. The semiconductor device of claim 4 , wherein the first protrusions protrude outwardly to be surrounded by the first cover insulating layer disposed between respective pairs of the immediately-adjacent insulating layers.
6. The semiconductor device of claim 4 , wherein:
the gate insulating layer comprises a plurality of second protrusions formed on the sidewall of the gate insulating layer and protruding outwardly, and
the second protrusions respectively protrude outwardly to be surrounded by one of the plurality of first gate electrodes and the plurality of second gate electrodes.
7. The semiconductor device of claim 6 , wherein the gate insulating layer comprises a charge storage layer, and the charge storage layer is arranged inside the plurality of second protrusions.
8. A semiconductor device comprising:
a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure comprising a channel layer and a gate insulating layer;
a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction;
a plurality of pairs of gate electrodes respectively arranged between immediately-adjacent insulating layers from among the plurality of insulating layers, each of the pairs of gate electrodes comprising a first gate electrode and a second gate electrode spaced apart from each other; and
cover insulating layer structures surrounding the channel structure between the first gate electrode and the second gate electrode of each of the plurality of pairs of gate electrodes, the cover insulating layer structures covering edge portions of the plurality of pairs of gate electrodes, wherein:
the cover insulating layer structures comprises:
a first cover insulating layer surrounding a portion of a sidewall of the channel structure between a first gate electrode from among the plurality of pairs of gate electrodes and a second gate electrode from among the plurality of pairs of gate electrodes;
a second cover insulating layer arranged as surrounding an edge portion of the first gate electrode from among the plurality of pairs of gate electrodes and an edge portion of the second gate electrode from among the plurality of pairs of gate electrodes both adjacent to a word line cut region; and
an air space disposed between the first cover insulating layer and the second cover insulating layer,
the first gate electrode comprises a first metal layer arranged directly on a top surface of a lower insulating layer from among the immediately-adjacent insulating layers,
the second gate electrode comprises a second metal layer arranged directly on a bottom surface of an upper insulating layer from among the immediately-adjacent insulating layers, and
a portion of the second cover insulating layer, the first cover insulating layer, and the air space are arranged between the first metal layer and the second metal layer.
9. The semiconductor device of claim 8 , wherein between each pair of the immediately-adjacent insulating layers are sequentially arranged in the first direction a first gate electrode from among the plurality of pairs of gate electrodes, a cover insulating layer structure from among the cover insulating layer structures, and a second gate electrode from among the plurality of pairs of gate electrodes.
10. The semiconductor device of claim 8 , wherein the second cover insulating layer covers edge portions of the immediately-adjacent insulating layers that are adjacent to the word line cut region.
11. A semiconductor device comprising:
a channel structure arranged on a substrate and extending in a first direction perpendicular to a top surface of the substrate, the channel structure comprising a channel layer and a gate insulating layer;
a plurality of insulating layers arranged on the substrate and surrounding the channel structure, the plurality of insulating layers spaced apart from each other in the first direction;
a plurality of pairs of gate electrodes respectively arranged between immediately-adjacent insulating layers from among the plurality of insulating layers, each of the pairs of gate electrodes comprising a first gate electrode and a second gate electrode spaced apart from each other; and
cover insulating layers surrounding the channel structure between the first gate electrode and the second gate electrode of each of the plurality of pairs of gate electrodes, the cover insulating layers covering edge portions of the plurality of pairs of gate electrodes, the cover insulating layers having sidewalls recessed inwardly with respect to sidewalls of the plurality of insulating layers, wherein
the first gate electrode comprises a first conductive barrier layer and a first metal layer that are sequentially arranged on a top surface of a lower insulating layer from among the immediately-adjacent insulating layers,
the second gate electrode comprises a second conductive barrier layer and a second metal layer that are sequentially arranged on a bottom surface of an upper insulating layer from among the immediately-adjacent insulating layers,
the cover insulating layers fill spaces between the each pair of the first gate electrode and the second gate electrode,
the cover insulating layers include top surfaces that respectively contact bottom surfaces of the second metal layer of the second gate electrode, and bottom surfaces that respectively contact top surfaces of the first metal layer of the first gate electrode, and
the cover insulating layers comprise low-k insulating material.
12. The semiconductor device of claim 11 , wherein:
a sidewall of the first gate electrode adjacent to a word line cut region is recessed inwardly with respect to sidewalls of the plurality of insulating layers adjacent to the word line cut region, and
a sidewall of the second gate electrode adjacent to the word line cut region is recessed inwardly with respect to the sidewalls of the plurality of insulating layers.