Transistor with implant screen
An apparatus includes a substrate and a transistor disposed on the substrate. The transistor includes a source and a source contact disposed on the source. The transistor also includes a drain and a drain contact disposed on the drain. A gate is disposed between the source contact and the drain contact, and a screened region is disposed adjacent the source contact or the drain contact. The screened region corresponds to a lightly doped region. The screened region includes an implant screen configured to reduce an effective dose in the screened region so as to shift an acceptable dose range of the screened region to a higher dose range. The acceptable dose range corresponds to acceptable breakdown voltage values for the screened region.
1. An apparatus, comprising:
a substrate; and
a transistor disposed on the substrate, the transistor including,
a source and a source contact disposed on the source,
a drain and a drain contact disposed on the drain,
a gate disposed between the source contact and the drain contact, and
a screened region disposed adjacent the source contact or the drain contact, the screened region corresponding to a lightly doped region,
wherein the screened region includes an implant screen configured to reduce an effective dose in the screened region so as to shift an acceptable dose range of the screened region to a higher dose range, the acceptable dose range corresponding to acceptable breakdown voltage values for the screened region.
2. The apparatus of claim 1 , wherein the acceptable dose range overlaps with a second acceptable dose range for a doped region of a second transistor in the apparatus, the doped region of the second transistor having a higher effective dose than the effective dose of the screened region.
3. The apparatus of claim 1 , wherein the acceptable dose range overlaps with a second acceptable dose range for a second lightly doped region of the transistor, the second lightly doped region having a higher effective dose than the effective dose of the screened region.
4. The apparatus of claim 1 , wherein implant screen includes at least one feature to block the dopant implant.
5. The apparatus of claim 4 , wherein the at least one feature includes a plurality of reticle lines that are dashed lines having a solid portion and a gap portion,
wherein a width of the solid portion can be in a range of 0.04 μm to 0.15 μm and a length of the solid portion can be in a range of 0.2 μm to 0.4 μm, and
wherein a length of the gap portion can be in a range of 0.2 μm to 0.4 μm.
6. The apparatus of claim 5 , wherein the dashed lines are arranged such that solid portion of a dashed line align with the gap portion of an adjacent line when viewed in a length direction of the transistor.
7. The apparatus of claim 4 , wherein the at least one feature includes a plurality of reticle lines that are solid lines,
wherein each of the reticle lines has a width in a range of 0.04 μm to 0.15 μm, and
wherein a spacing between adjacent lines is in a range of 0.04 μm to 1 μm.
8. The apparatus of claim 4 , wherein the screened region is a contact-to-gate region,
wherein the at least one feature includes a plurality of reticle lines extending in a width direction of the transistor,
wherein the apparatus includes shallow trench isolation regions on opposing sides of the screened region in the width direction of the transistor, and
wherein both ends of each of the reticle lines extend into the respective shallow trench isolation regions.
9. The apparatus of claim 8 , wherein the ends the reticle lines on at least one side of the implant screen are connected to the gate by a connection layer to form a field plate.
10. The apparatus of claim 8 , wherein the ends of the reticle lines are not connected to the gate to form a floating configuration.
11. The apparatus of claim 4 , wherein the screened region is a contact-to-active area region, and
wherein the at least one feature includes at least one reticle line that forms a C-shaped configuration around the corresponding source contact or drain contact.
12. The apparatus of claim 11 , wherein the C-shaped configuration is centered between the corresponding contact and an edge of an active area of the screened region.
13. The apparatus of claim 1 , further comprising:
a second screened region disposed adjacent the other of the source contact or the drain contact, the second screened region corresponding to a second lightly doped region,
wherein the second screened region includes a second implant screen configured to reduce an effective dose in the second screened region so as to shift a second acceptable dose range of the second screened region to a second higher dose range, the second acceptable dose range corresponding to acceptable breakdown voltage values for the second screened region.
14. A method, comprising:
forming a first lightly doped region on a substrate, the first lightly doped region having a first acceptable dose range for a dopant implant;
forming a second lightly doped region on the substrate, the second lightly doped region having a second acceptable dose range for the dopant implant, the second acceptable dose range having a higher dose range for the dopant implant than the first acceptable dose range;
doping the first and second lightly doped regions with the dopant implant during a same implant step;
shifting the first acceptable dose range to overlap with the second acceptable dose range by reducing an effective dose in the first lightly doped region such that a shared dosage concentration is used for the dopant implant.
15. The method of claim 14 , further comprising:
forming an implant screen to block of the at least a portion of the dopant implant directed to the first lightly doped region to perform the reduction in the effective dose of the first lightly doped region.
16. The method of claim 15 , wherein the forming of the implant screen includes,
providing a polysilicon layer over at least the first lightly doped region,
etching the poly silicon layer to expose a portion of the surface of the first lightly doped region and leave at least one polysilicon feature that blocks a remaining portion of the surface of the first lightly doped region; and
implanting a dopant into the exposed portion of the surface of the screened region,
wherein the at least one polysilicon feature is configured to reduce the effective dose in the first lightly doped region such that the first lightly doped region has an acceptable breakdown voltage value.
17. The method of claim 14 , wherein a first transistor includes the first lightly doped region and a second transistor includes the second lightly doped region,
wherein the first lightly doped region corresponds to a contact-to-active area region or a contact-to-gate region in the first transistor, and
wherein the second lightly doped region corresponds to a contact-to-active area region or a contact-to-gate region in the second transistor.
18. The method of claim 14 , wherein a same transistor includes the first lightly doped region and the second lightly doped region, and
wherein the first lightly doped region corresponds to a contact-to-active area region and the second lightly doped region corresponds to a contact-to-gate region.
19. An apparatus, comprising:
a substrate; and
a first transistor disposed on the substrate, the first transistor including,
a source and a source contact disposed on the source,
a drain and a drain contact disposed on the drain,
a gate disposed between the source contact and the drain contact, and
a first screened region disposed adjacent the source contact and a second screened region disposed adjacent the drain contact, each of the first and second screened regions respectively corresponding to first and second lightly doped regions,
wherein the first screened region includes a first implant screen configured to reduce a first effective dose in the first screened region so as to shift a first acceptable dose range of the first screened region to a first higher dose range,
wherein the second screened region includes a second implant screen configured to reduce a second effective dose in the second screened region so as to shift a second acceptable dose range of the second screened region to a second higher dose range,
wherein each of the first and second acceptable dose ranges overlaps with a third acceptable dose range for a doped region corresponding to a second transistor in the apparatus or fourth acceptable dose range for a doped region corresponding to a third lightly doped region in the first transistor, the third doped region having a higher effective dose than either of the first and second effective doses, and the fourth doped region having a different effective dose than either of the first and second effective doses,
wherein each of the first and second implant screens includes at least one poly line to block the dopant implant.
20. The apparatus of claim 19 , wherein when each of the first and second screened regions is a contact-to-active area region, the fourth doped region has a lower effective dose than either of the first and second effective doses, and
wherein when each of the first and second screened regions is a contact-to-gate region, the fourth doped region has a higher effective dose than either of the first and second effective doses.