Structure and method for SRAM FinFET device
The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a first fin structure disposed over an n-type FinFET (NFET) region of a substrate. The first fin structure includes a silicon (Si) layer, a silicon germanium oxide (SiGeO) layer disposed over the silicon layer and a germanium (Ge) feature disposed over the SiGeO layer. The device also includes a second fin structure over the substrate in a p-type FinFET (PFET) region. The second fin structure includes the silicon (Si) layer, a recessed silicon germanium oxide (SiGeO) layer disposed over the silicon layer, an epitaxial silicon germanium (SiGe) layer disposed over the recessed SiGeO layer and the germanium (Ge) feature disposed over the epitaxial SiGe layer.
1. A device, comprising:
a semiconductor layer;
an oxide disposed over the semiconductor layer;
a dielectric liner disposed on sidewalls of the oxide and on sidewalls of the semiconductor layer;
a semiconductor component disposed over the oxide, wherein the semiconductor layer and the semiconductor component have different material compositions, wherein an upper surface of the dielectric liner is disposed below an upper surface of the semiconductor component; and
a gate structure at least partially wrapping around the semiconductor component.
2. The device of claim 1 , wherein:
the semiconductor layer contains a first type of semiconductor element;
the semiconductor component contains a second type of semiconductor element; and
the oxide contains the first type of semiconductor element and the second type of semiconductor element.
3. The device of claim 2 , wherein:
the semiconductor layer contains silicon;
the semiconductor component contains germanium; and
the oxide contains silicon germanium oxide.
4. The device of claim 1 , wherein:
the semiconductor layer includes an upwardly protruding portion; and
the oxide is disposed on the upwardly protruding portion.
5. The device of claim 1 , wherein the dielectric liner includes silicon nitride, silicon oxynitride, or aluminum oxide.
6. The device of claim 1 , further comprising: a dielectric component disposed between the semiconductor layer and the gate structure.
7. The device of claim 6 , wherein the dielectric component is disposed on sidewalls of the dielectric liner.
8. The device of claim 1 , wherein a bottom surface of the gate structure is disposed over a top surface of the oxide.
9. The device of claim 1 , wherein the device is a part of a n-type FinFET.
10. A device, comprising:
a first semiconductor layer that contains a first type of semiconductor material;
a second semiconductor layer disposed over the first semiconductor layer, wherein the second semiconductor layer contains the first type of semiconductor material and a second type of semiconductor material different from the first type of semiconductor material;
a third semiconductor layer disposed over the second semiconductor layer, wherein the third semiconductor layer contains the second type of semiconductor material;
a dielectric liner disposed on at least side surfaces of the second semiconductor layer; and
a gate structure at least partially wrapping around the third semiconductor layer;
wherein:
the second semiconductor layer is in direct contact with the first semiconductor layer; or
the third semiconductor layer is in direct contact with the second semiconductor layer.
11. The device of claim 10 , wherein:
the first semiconductor layer contains silicon;
the second semiconductor layer contains silicon germanium; and
the third semiconductor layer contains germanium.
12. The device of claim 10 , wherein:
the first semiconductor layer includes an upwardly protruding portion; and
the dielectric liner is further disposed on sidewalls of the upwardly protruding portion but not on sidewalls of the third semiconductor layer.
13. The device of claim 12 , wherein the dielectric liner is disposed below a bottom surface of the third semiconductor layer and below a bottom surface of the gate structure.
14. The device of claim 10 , further comprising: a dielectric component disposed between the first semiconductor layer and the gate structure.
15. The device of claim 10 , wherein a bottommost surface of the gate structure is disposed over a top surface of the second semiconductor layer.
16. The device of claim 10 , wherein the device is a part of a p-type FinFET.
17. The device of claim 10 , wherein the first semiconductor layer is wider than the second semiconductor layer and the third semiconductor layer.
18. A device, comprising:
an n-type FinFET (NFET) that includes:
a first semiconductor layer;
an oxide disposed over the first semiconductor layer;
a first dielectric component disposed on sidewalls of the oxide;
a second semiconductor layer disposed over the oxide, wherein the first semiconductor layer and the second semiconductor layer have different material compositions, wherein a bottom surface of the second semiconductor layer is disposed over a top surface of the first dielectric component; and
a first gate structure that at least partially wraps around the second semiconductor layer; and
a p-type FinFET (PFET) that includes:
a third semiconductor layer, wherein the third semiconductor layer has a same material composition as the first semiconductor layer;
a fourth semiconductor layer, wherein the fourth semiconductor layer has a same material composition as the second semiconductor layer;
a fifth semiconductor layer disposed between the third semiconductor layer and the fourth semiconductor layer, wherein the fifth semiconductor layer contains a compound of the third semiconductor layer and the fourth semiconductor layer;
a second dielectric component disposed on sidewalls of the fifth semiconductor layer, wherein a bottom surface of the fourth semiconductor layer is disposed over a top surface of the second dielectric component; and
a second gate structure at least partially wrapping around the fourth semiconductor layer.
19. The device of claim 18 , wherein:
the first semiconductor layer and the third semiconductor layer each contains silicon;
the second semiconductor layer and the fourth semiconductor layer each contains germanium;
the fifth semiconductor layer contains silicon germanium; and
the oxide contains silicon germanium oxide.
20. The device of claim 18 , wherein the second semiconductor layer or the fifth semiconductor layer has a non-rectangular profile in a cross-sectional view.