Semiconductor device with cell region, method of generating layout diagram and system for same

1. A method of fabricating a semiconductor device, the method comprising:

forming first, second and third active regions, the first and third active regions having a first conductivity configuration, the second active region having a second conductivity configuration, and the first, second and third active regions having corresponding long axes extending substantially in a first direction;

relative to a second direction substantially perpendicular to the first direction, arranging the second active region between the first and third active regions;

forming first and second gate structures having corresponding long axes extending substantially in the second direction;

arranging the first gate structure to be over the first active region and at least a first part of the second active region;

arranging the second gate structure to be over the third active region and at least a second part of the second active region;

relative to the second direction, configuring the second gate structure to overlap a first border region, the first border region representing an overlap of first and second cell regions, the first cell region including the first gate structure, the first active region and the first part of the second active region, and the second cell region including the second gate structure, the third active region and the second part of the second active region;

aligning, relative to the second direction, the first border region with an approximate midline of the second active region; and

relative to the second direction, configuring the first gate structure to not extend to the first border region.

2. The method of claim 1 , further comprising:

forming a fourth active region extending substantially parallel to the first direction, and designated for the first conductivity configuration;

forming a fifth active region with the third active region and the fourth active region representing corresponding first and second parts of the fifth active region; and

forming a third cell region to include the second part of the fifth active region relative to the second direction, substantially abutting the third cell region and the second cell region resulting in:

a second border region which is substantially aligned with an approximate midline of the fifth active region; and

a second gap which is between the second gate structure and the second border region.

3. The method of claim 1 , further comprising:

forming a fourth active region extending substantially parallel to the first direction, and designated for the first conductivity configuration, the third active region and the fourth active region representing corresponding first and second parts of a fifth active region; and

forming a third cell region to include the second part of the fifth active region;

relative to the second direction, substantially abutting the third cell region and the second cell region resulting in:

a second border region which is substantially aligned with an approximate midline of the fifth active region; and

a second gap which is between the second gate structure and the second border region.

4. The method of claim 1 , further comprising:

forming a fourth active region extending substantially parallel to the first direction, and designated for the first conductivity configuration, the first active region and the fourth active region representing corresponding first and second parts of a fifth active region;

forming a third cell region to include the second part of the fifth active region; and

relative to the second direction, substantially abutting the third cell region and the first cell region resulting in:

a second border region which is substantially aligned with an approximate midline of the fifth active region; and

a second gap which is between the first gate structure and the second border region.

5. The method of claim 1 , further comprising:

forming a fourth active region extending substantially parallel to the first direction, and designated for the first conductivity configuration, the third active region and the fourth active region representing corresponding first and second parts of a fifth active region;

forming a third cell region to include the second part of the fifth active region;

relative to the second direction, substantially abutting the third cell region and the second cell region resulting in:

a second border region which is substantially aligned with an approximate midline of the fifth active region; and

overlapping the second gate structure with the second border region.

6. The method of claim 1 , further comprising:

forming a fourth active region extending substantially parallel to the first direction, and designated for the first conductivity configuration, the first active region and the fourth active region representing corresponding first part and second parts of a fifth active region;

forming a third cell region to include the second part of the fifth active region;

relative to the second direction, substantially abutting the third cell region and the first cell region resulting in:

a second border region which is substantially aligned with an approximate midline of the fifth active region; and

overlapping the first gate structure with the second border region.

7. The method of claim 1 , further comprising:

forming a fourth active region having a first part of the first active region and having the first conductivity configuration; and

forming a third cell region to include a second part of the fourth active region; and relative to the second direction, an approximate midline of the fourth active region representing a second border region between the first and the third cell regions and the first gate structure not extending to the second border region.

8. The method of claim 1 , wherein:

the first and second conductivity configurations are correspondingly P-type and N-type; or

the first and second conductivity configurations are correspondingly N-type and P-type.

9. The method of claim 1 , wherein:

each of the first active region, the second active region and the third active region is represented by one or more corresponding fin patterns.

10. A method of fabricating a semiconductor device, the method comprising:

forming first, second and third active regions, the first and third active regions having a first conductivity configuration, the second active region having a second conductivity configuration, and the first, second and third active regions having corresponding long axes extending substantially in a first direction;

relative to a second direction substantially perpendicular to the first direction, arranging the second active region between the first and third active regions;

forming first and second gate structures having corresponding long axes extending substantially in the second direction;

arranging the first gate structure to be over the first active region and at least a first part of the second active region;

arranging the second gate structure to be over the third active region and at least a second part of the second active region;

relative to the second direction, configuring the second gate structure to overlap a first border region, the first border region representing an overlap of first and second cell regions, the first cell region including the first gate structure, the first active region and the first part of the second active region, and the second cell region including the second gate structure, the third active region and the second part of the second active region;

aligning, relative to the second direction, the first border region with an approximate midline of the second active region;

relative to the second direction, configuring the first gate structure to not extend to the first border region;

forming a fourth active region having the third active region as a first part and having the first conductivity configuration; and

forming a third cell region to include a second part of the fourth active region; and relative to the second direction, an approximate midline of the fourth active region representing a second border region between the first and the third cell regions overlapped by the second gate structure.

11. The method of claim 10 , further comprising:

forming the third cell region to include a second part of a fifth active region; and

relative to the second direction, substantially abutting the third cell region and the second cell region resulting in:

a second gap which is between the second gate structure and the second border region.

12. The method of claim 10 , further comprising:

forming the third cell region to include a second part of a fifth active region; and

relative to the second direction, substantially abutting the third cell region and the first cell region resulting in:

overlapping the first gate structure with the second border region.

13. The method of claim 10 , further comprising at least one of:

forming one or more semiconductor masks at a masking facility based on a layout diagram; or

forming at least one component in a layer of a semiconductor at a fabricating facility based on a layout diagram.

14. A method of fabricating a semiconductor device, the method comprising:

forming first, second and third active regions, the first and third active regions having a first conductivity configuration, the second active region having a second conductivity configuration, and the first, second and third active regions having corresponding long axes extending substantially in a first direction;

relative to a second direction substantially perpendicular to the first direction, arranging the second active region between the first and third active regions;

forming first and second gate structures having corresponding long axes extending substantially in the second direction;

arranging the first gate structure to be over the first active region and at least a first part of the second active region;

arranging the second gate structure to be over the third active region and at least a second part of the second active region;

relative to the second direction, configuring the second gate structure to overlap a first border region, the first border region representing an overlap of first and second cell regions, the first cell region including the first gate structure, the first active region and the first part of the second active region, and the second cell region including the second gate structure, the third active region and the second part of the second active region;

aligning, relative to the second direction, the first border region with an approximate midline of the second active region;

relative to the second direction, configuring the first gate structure to not extend to the first border region;

forming a fourth active region having a first part of the first active region and having the first conductivity configuration; and

forming a third cell region to include a second part of the fourth active region; and relative to the second direction, an approximate midline of the fourth active region representing a second border region between the first and the third cell regions and the first gate structure not extending to the second border region.

15. The method of claim 14 , further comprising:

forming a fifth active region with the fourth active region representing a first part of the fifth active region, the fourth and fifth active regions having the second conductivity configuration;

forming the third cell region with a second part of the fifth active region; and relative to the second direction an approximate midline of the fifth active region representing the second border region which is between the first and third cell regions; and the second gate structure not extending to the second border region;

forming a sixth active region which represents a first part of a seventh active region, the sixth and seventh active regions having the second conductivity configuration; and

forming a fourth cell region including a second part of the seventh active region and relative to the second direction an approximate midline of the seventh active region representing a third border region which is between the first and fourth cell regions, and the first gate structure not extending to the second border region, and the first gate structure overlaps the third border region.

16. The method of claim 14 , further comprising:

forming a fifth active region with the first active region and the fourth active region representing corresponding first and second parts of the fifth active region; and

forming the third cell region to include the second part of the fifth active region; relative to the second direction, substantially abutting the third cell region and the first cell region resulting in:

the second border region which is substantially aligned with an approximate midline of the fifth active region; and

overlapping the first gate structure with the second border region.

17. The method of claim 14 , further comprising:

forming a fifth active region with the third active region and the fourth active region representing corresponding first and second parts of the fifth active region; and

forming the third cell region to include the second part of the fifth active region; relative to the second direction, substantially abutting the third cell region and the second cell region resulting in:

the second border region which is substantially aligned with an approximate midline of the fifth active region; and

overlapping the second gate structure with the second border region.

18. The method of claim 14 , further comprising:

forming a fifth active region with the first active region and the fourth active region representing corresponding first and second parts of the fifth active region; and

forming the third cell region to include the second part of the fifth active region; and relative to the second direction, substantially abutting the third cell region and the first cell region resulting in the second border region which is substantially aligned with an approximate midline of the fifth active region; and a second gap which is between the first gate structure and the second border region.

19. The method of claim 14 , wherein:

the first and second conductivity configurations correspondingly are PMOS and NMOS; or

the first and second conductivity configurations correspondingly are NMOS and PMOS.

20. The method of claim 14 , wherein:

the first, second and third active regions are configured with corresponding one or more fin structures having corresponding long axes extending substantially in the first direction.