Semiconductor device and method for fabricating the same
A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.
1. A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure;
a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure, wherein the SDB structure comprises:
a bottom portion; and
a top portion on the bottom portion, wherein the top portion and the bottom portion comprise different widths, a top surface of the bottom portion is higher than a top surface of the fin-shaped structure and even with a top surface of the gate structure.
2. A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure;
a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure, wherein the SDB structure comprises:
a bottom portion; and
a top portion on the bottom portion, wherein the top portion and the bottom portion comprise different widths and a top surface of the bottom portion is higher than a top surface of the fin-shaped structure; and
an air gap in the SDB structure, wherein a top surface of the air gap is higher than a top surface of the gate structure.