Semiconductor device

1. A semiconductor device comprising:

a substrate;

a plurality of first electrodes arranged away from each other with gaps on the substrate;

a first intermediate layer arranged on each of the plurality of first electrodes;

a second intermediate layer disposed between the first intermediate layers;

a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and

a second electrode arranged on the photoelectric conversion layer,

wherein the photoelectric conversion layer is in contact with the first intermediate layer and the second intermediate layer, and

wherein a content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

2. The semiconductor device according to claim 1 , wherein a part of the second intermediate layer is arranged on the first intermediate layer.

3. The semiconductor device according to claim 1 , wherein a part of the second intermediate layer is arranged between each of the plurality of first electrodes and the first intermediate layer.

4. The semiconductor device according to claim 1 , further comprising an insulating layer arranged in the gaps of the plurality of first electrodes.

5. The semiconductor device according to claim 4 , wherein an upper face of each of the plurality of first electrodes is located above an upper face of the insulating layer.

6. The semiconductor device according to claim 1 , wherein the first intermediate layer includes an oxide of a material forming the first electrodes.

7. The semiconductor device according to claim 1 , wherein an outer edge of the first intermediate layer is located farther out than an outer edge of each of the first electrodes in a plan view.

8. The semiconductor device according to claim 1 , wherein at least one of the first intermediate layer and the second intermediate layer is an N-type widegap semiconductor.

9. The semiconductor device according to claim 1 , wherein at least one of the first intermediate layer and the second intermediate layer contains at least one of titanium oxide and zinc oxide.

10. A semiconductor device comprising: a first lower electrode, a second lower electrode, a second electrode, a photoelectric conversion layer arranged between the first lower electrode and the second electrode, and an insulating layer between the first lower electrode and the second lower electrode in a plan view,

wherein the insulating layer includes a first metal and a second metal having a higher oxidation number than the first metal, and

wherein a molar ratio of the first metal to a sum of the first metal and the second metal in a first region in contact with the first lower electrode is larger than a molar ratio of the first metal to a sum of the first metal and the second metal in a second region disposed between first regions.

11. The semiconductor device according to claim 10 , wherein the first metal and the second metal are Ti.

12. The semiconductor device according to claim 1 , wherein the photoelectric conversion layer includes a quantum dot.

13. The semiconductor device according to claim 12 , wherein the photoelectric conversion layer includes a nanoparticle including at least one of PbS, PbSe, PbTe, InP, InAs, CdS, CdSe, and CdTe.

14. The semiconductor device according to claim 13 , wherein at least one of 1,4-benzenedithiol and 1,3-benzenedithiol is on a surface of the nanoparticle.

15. The semiconductor device according to claim 13 , wherein at least one of chlorine, bromine, and iodine is on a surface of the nanoparticle.

16. A photoelectric conversion device comprising:

the semiconductor device according to claim 1 ; and

an optical system that guides incident light to the semiconductor device.

17. A moving body comprising:

a main body;

the semiconductor device according to claim 1 provided to the main body; and

a motion mechanism that causes the main body to move.