Display device having a blocking layer
A display device includes: a substrate including a display area and a transmission area; a blocking layer disposed in the display area of the substrate and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer; an insulating layer disposed on the blocking layer; a transistor disposed on the insulating layer; and a light emitting element connected to the transistor, wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.
1. A display device comprising:
a substrate including a display area and a transmission area;
a blocking layer disposed at the display area of the substrate and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer;
an insulating layer disposed on the blocking layer;
a transistor disposed on the insulating layer; and
a light emitting element connected to the transistor,
wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and
wherein a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.
2. The display device of claim 1 , wherein
the first blocking layer includes a metal oxide, an organic material, or amorphous silicon, and
the second blocking layer includes a metal.
3. The display device of claim 1 , wherein
the first blocking layer includes a molybdenum oxide, and
the second blocking layer includes molybdenum.
4. The display device of claim 3 , wherein
the first blocking layer includes tantalum in addition to the molybdenum oxide.
5. The display device of claim 4 , wherein
the first blocking layer includes 8 wt % or more of tantalum.
6. The display device of claim 3 , wherein
the first blocking layer includes titanium in addition to the molybdenum oxide.
7. The display device of claim 6 , wherein
the first blocking layer includes about 50 wt % of titanium.
8. The display device of claim 1 , further comprising:
a first insulating layer disposed between the substrate and the first blocking layer,
wherein the first insulating layer includes silicon.
9. The display device of claim 8 , wherein
the first insulating layer includes at least one of a silicon oxynitride, amorphous silicon, a silicon nitride, and a silicon oxide.
10. The display device of claim 8 , further comprising:
a second insulating layer disposed between the second blocking layer and the transistor,
wherein the second insulating layer includes at least one of a silicon nitride, a silicon oxide, and a silicon oxynitride.
11. The display device of claim 10 , wherein
the second insulating layer includes a first layer and a second layer that is disposed on the first layer,
the first layer includes a silicon nitride, and the second layer includes a silicon oxide.
12. A display device comprising:
a first display area including a first pixel area;
a second display area including a second pixel area and a transmission area that are disposed adjacent to each other, wherein no pixel is disposed in the transmission area;
an optical device overlapping the second display area; and
a blocking layer disposed in the second pixel area and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer,
wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and
wherein a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.
13. The display device of claim 12 , wherein
the blocking layer includes an opening that overlaps the transmission area, and
the opening has a cross-shaped planar shape.
14. The display device of claim 13 , wherein
An edge of the opening has recessed portions and convex portions.
15. The display device of claim 12 , wherein
the blocking layer has an opening that overlaps the transmission area, and
the opening has a circular planar shape.
16. The display device of claim 12 , wherein
the first blocking layer includes a metal oxide, an organic material, or amorphous silicon, and
the second blocking layer includes a metal.
17. The display device of claim 12 , wherein
the first blocking layer includes a molybdenum oxide and tantalum.
18. The display device of claim 17 , wherein
the first blocking layer includes 8 wt % or more of tantalum.
19. The display device of claim 12 , wherein
the first blocking layer includes a molybdenum oxide and titanium.
20. The display device of claim 19 , wherein
the first blocking layer includes about 50 wt % of titanium.
21. The display device of claim 12 , further comprising:
a first insulating layer disposed between the substrate and the first blocking layer,
wherein the first insulating layer includes at least of a silicon oxynitride, amorphous silicon, a silicon nitride, and a silicon oxide.
22. The display device of claim 21 , further comprising:
a second insulating layer disposed between the second blocking layer and the transistor,
wherein the second insulating layer includes at least one of a silicon nitride, a silicon oxide, and a silicon oxynitride.