Display device
A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
1. A display device comprising:
a substrate;
a corrosion prevention layer on the substrate and comprising an inorganic material;
a first conductive layer on the corrosion prevention layer and comprising aluminum or an aluminum alloy;
a first insulating film on the first conductive layer;
a semiconductor layer on the first insulating film and comprising a channel region of a transistor;
a second insulating film on the semiconductor layer; and
a second conductive layer on the second insulating film and comprising a barrier layer, which comprises titanium, and a main conductive layer, which comprises aluminum or an aluminum alloy,
wherein
the semiconductor layer comprises an oxide semiconductor, and
the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
2. The display device of claim 1 , wherein the second conductive layer comprises a gate electrode of the transistor.
3. The display device of claim 2 , further comprising:
a third insulating film on the second conductive layer; and
a third conductive layer on the third insulating film,
wherein the third conductive layer comprises a source electrode and a drain electrode of the transistor.
4. The display device of claim 3 , wherein the source electrode of the transistor is electrically connected to both the semiconductor layer and the first conductive layer.
5. The display device of claim 4 , wherein the third conductive layer comprises a first power supply voltage line.
6. The display device of claim 1 , wherein the second conductive layer is electrically connected to the first conductive layer through a contact hole that exposes the first conductive layer, and
wherein the second conductive layer is in direct contact with the first conductive layer.
7. The display device of claim 6 , wherein the first conductive layer further comprises a metal pattern comprising titanium as a top layer of the first conductive layer,
wherein the metal pattern and the barrier layer are in direct contact with each other.
8. The display device of claim 1 , wherein the barrier layer has the same shape as the main conductive layer in a plan view.
9. The display device of claim 8 , wherein the barrier layer has the same shape as the second insulating film in the plan view.
10. The display device of claim 9 , wherein side surfaces of the barrier layer, side surfaces of the main conductive layer, and side surfaces of the second insulating film are aligned.
11. The display device of claim 1 , wherein a thickness of the barrier layer is in a range of 100 Å to 300 Å.
12. The display device of claim 11 , wherein a thickness of the main conductive layer is in a range of 2500 Å to 4000 Å.
13. The display device of claim 12 , further comprising:
a capping layer on the main conductive layer and comprising at least one of titanium or a titanium compound.
14. A display device comprising:
a substrate;
a semiconductor layer on the substrate and comprising a channel region of a transistor;
a first insulating film on the semiconductor layer;
a first conductive layer on the first insulating film and comprising a barrier layer, which comprises titanium, a main conductive layer, which comprises aluminum or an aluminum alloy, and a capping layer, which comprises titanium;
a second insulating film on the first conductive layer; and
a second conductive layer on the second insulating film and comprising a source electrode and a drain electrode of the transistor,
wherein
the semiconductor layer comprises an oxide semiconductor,
the first conductive layer comprises a gate electrode of the transistor, and
the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.
15. The display device of claim 14 , further comprising:
a corrosion prevention layer on the substrate and comprising an inorganic material;
a third conductive layer on the corrosion prevention layer and comprising aluminum or an aluminum alloy; and
a third insulating film on the third conductive layer,
wherein the corrosion prevention layer, the third conductive layer, and the third insulating film are between the substrate and the semiconductor layer.
16. The display device of claim 15 , wherein the third conductive layer comprises a lower conductive pattern, which overlaps the channel region of the transistor.
17. The display device of claim 16 , wherein the lower conductive pattern is electrically connected to the gate electrode of the transistor.
18. The display device of claim 14 , wherein the barrier layer has the same shape as the main conductive layer in a plan view.
19. The display device of claim 18 , wherein the barrier layer has the same shape as the first insulating film in the plan view.
20. The display device of claim 19 , wherein side surfaces of the barrier layer, side surfaces of the main conductive layer, and side surfaces of the first insulating film are aligned.