Zinc tellurium selenium based quantum dot

1. A core-shell quantum dot comprising

a core comprising a first semiconductor nanocrystal material; and

a semiconductor nanocrystal shell disposed on the core,

wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum,

wherein an ultraviolet-visible absorption spectrum of the core-shell quantum dot has a first absorption peak and a valley adjacent to the first absorption peak, and

(Abs first −Abs valley )/Abs first ≥0.01

wherein Abs first is an absorption intensity at a first absorption peak wavelength and Abs valley is an absorption intensity at a lowest point of the valley; and

wherein the first semiconductor nanocrystal material comprises zinc, tellurium, and selenium and the semiconductor nanocrystal shell comprises zinc and at least one of selenium and sulfur.

2. The core-shell quantum dot of claim 1 , wherein in the ultraviolet-visible absorption spectrum of the core-shell quantum dot,

(Abs first −Abs valley )/Abs first ≥0.02

wherein Abs first is an absorption intensity at a first absorption peak wavelength and Abs valley is an absorption intensity at a lowest point of the valley.

3. The core-shell quantum dot of claim 1 , wherein the core-shell quantum dot has a quantum efficiency of greater than or equal to about 5%.

4. The core-shell quantum dot of claim 1 , wherein in the core-shell quantum dot, a mole ratio of tellurium with respect to selenium is greater than about 0.05:1.

5. The quantum dot of claim 1 , wherein:

the quantum dot comprises

a core comprising a first semiconductor nanocrystal material, and

a semiconductor nanocrystal shell disposed on the core, and

the first semiconductor nanocrystal material comprises zinc, tellurium, and selenium and the semiconductor nanocrystal shell comprises zinc and at least one of selenium and sulfur.

6. The core-shell quantum dot of claim 5 , wherein the first semiconductor nanocrystal or the core-shell quantum dot does not comprise manganese, copper, or a combination thereof.

7. The core-shell quantum dot of claim 1 , wherein the core comprises ZnTe x Se 1−x , wherein x is greater than or equal to 0.5 and less than or equal to about 0.9, and the semiconductor nanocrystal shell comprises ZnSe, ZnS, ZnSeS, or a combination thereof.

8. The core-shell quantum dot of claim 1 , wherein the core-shell quantum dot has a maximum photoluminescent peak in a wavelength range of greater than or equal to about 490 nanometers, and wherein a full width at half maximum of the maximum photoluminescent peak is less than or equal to about 50 nanometers, and wherein the core-shell quantum dot has a quantum efficiency of greater than or equal to about 10%.

9. The core-shell quantum dot of claim 1 , wherein in the core-shell quantum dot, an amount of the aluminum is greater than or equal to about 0.01 moles with respect to 1 mole of tellurium.

10. The core-shell quantum dot of claim 1 , wherein the core-shell quantum dot comprises an organic ligand and the organic ligand does not comprise an organic compound comprising a thiol moiety and an amino group, a carboxylic acid group, or a combination thereof.

11. A quantum dot comprising

zinc,

tellurium,

selenium, and

aluminum,

wherein the quantum dot does not comprise cadmium, and in the quantum dot, an amount of the aluminum with respect to one mole of tellurium is greater than or equal to about 0.01;

wherein the quantum dot does not comprise an indium phosphide; and

wherein an ultraviolet-visible absorption spectrum of the quantum dot has a first absorption peak and a valley adjacent to the first absorption peak; and

(Abs first −Abs valley )/Abs first ≥0.03

wherein Abs first is an absorption intensity at the first absorption peak and Abs valley is an absorption intensity at a lowest point of the valley.

12. The quantum dot of claim 11 , wherein the quantum dot comprises ZnTe x Se 1−x , wherein x is greater than or equal to about 0.5 and less than or equal to about 0.95.

13. The quantum dot of claim 11 , wherein the quantum dot does not comprise manganese, copper, or a combination thereof.

14. The core-shell quantum dot of claim 1 , wherein the quantum dot does not comprise a Group III-V compound.

15. The quantum dot of claim 11 , wherein the quantum dot is configured to exhibit a maximum photoluminescent peak having a full width at half maximum of less than or equal to about 40 nanometers and the quantum dot has a quantum efficiency of greater than or equal to about 2%.

16. The quantum dot of claim 11 , wherein an ultraviolet-visible absorption spectrum of the quantum dot has a first absorption peak and a valley adjacent to the first absorption peak, and

(Abs first −Abs valley )/Abs first ≥0.01

wherein Abs first is an absorption intensity at the first absorption peak and Abs valley is an absorption intensity at a lowest point of the valley.

17. The quantum dot of claim 11 , wherein the first absorption peak and the lowest point of the valley are present in a wavelength range of greater than or equal to 420 nanometers and less than or equal to about 500 nanometers.

18. A quantum dot polymer composite comprising

a polymer matrix; and

a plurality of quantum dots dispersed in the polymer matrix,

wherein the plurality of quantum dots comprises the core-shell quantum dot of claim 1 .

19. The quantum dot polymer composite of claim 18 , wherein the polymer matrix comprises a cross-linked polymer, a binder polymer having a carboxylic acid group, or a combination thereof.

20. A display device comprising

a light source and

a light emitting element,

wherein the light emitting element comprises the quantum dot-polymer composite of claim 18 , and

the light source is configured to provide the light emitting element with incident light.