Radar based fill-level sensor
A radar based, fill-level sensor comprising at least one semiconductor element, including at least a semiconductor chip and a chip package, in which the at least one semiconductor chip is arranged, wherein the at least one semiconductor chip has at least one coupling element, which serves as a signal gate for electromagnetic waves, preferably in the millimeter wave region, characterized in that at least one first resonator structure is arranged on a surface portion of the chip package.
1. A method for manufacturing a radar based fill-level sensor, the radar based fill-level sensor comprising:
at least one semiconductor element, including at least a semiconductor chip and a chip package, in which the at least one semiconductor chip is arranged, wherein the at least one semiconductor chip has at least one coupling element, which serves as a signal gate for electromagnetic waves, wherein at least one first resonator structure is arranged on a surface portion of the chip package and wherein the first resonator structure is embodied as a dielectric resonator structure, and the first resonator structure is arranged in such a way on the surface portion of the chip package that the chip package separates the resonator structure from the coupling element,
the method comprising steps as follows:
sending radiation through the semiconductor element for determining a position of the semiconductor chip relative to the chip package;
partially removing the chip package until a surface portion of the chip package has at least one depression;
producing the first resonator structure in the at least one depression, so that the separation between the at least one first resonator structure and the at least one coupling element of the semiconductor chip is lessened.
2. The method as claimed in claim 1 , wherein:
at least one second resonator structure is arranged between said semiconductor chip and said at least one first resonator structure.
3. The method as claimed claim 1 , wherein:
said depression extends in the direction of said at least one semiconductor chip.
4. The method as claimed in claim 1 , wherein:
said depression extends in the direction of said at least one second resonator structure.
5. The method as claimed in claim 1 , wherein:
said at least one semiconductor element is arranged on a printed circuit board; and
a dielectric lens is secured on said printed circuit board in such a way that said at least one semiconductor element lies in the focal point of said dielectric lens.
6. The method as claimed in claim 1 , wherein:
said semiconductor element is arranged on a printed circuit board; and
at least one hollow conductor is arranged on the printed circuit board transferring the electromagnetic waves produced by said semiconductor element.
7. The method as claimed in claim 6 , further comprising:
a dielectric waveguide arranged said the depression, so that electromagnetic waves out-coupled from said coupling element are led by means of a dielectric waveguide into the hollow conductor.
8. The method as claimed in claim 1 , wherein:
said producing of the first resonator structure in the at least one depression is performed by means of a 2D or 3D printing method or an MID method.
9. The method as claimed in claim 1 , wherein:
said sending of radiation through the semiconductor element is performed by means of x-rays.
10. The method as claimed in claim 1 , wherein:
said partial removing of the chip package is performed by means of milling or laser beam machining.
11. The method as claimed in claim 1 , wherein:
the first resonator structure comprises a rectangular metal platelet; and
an edge length of the first resonator structure corresponds to a half wavelength or an integer multiple half wavelength of the electromagnetic waves.