Semiconductor device
A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.
1. A semiconductor device, comprising:
a substrate;
a semiconductor package disposed on the substrate;
a thermal conductive bonding layer disposed on the semiconductor package;
a lid comprising:
a plate portion attached to the thermal conductive bonding layer and covering the semiconductor package; and
a frame portion protruding from edges of the plate portion towards the substrate, wherein the semiconductor package is enclosed by the substrate, the frame portion and the plate portion;
an underfill disposed between the semiconductor package and the substrate; and
a plurality of first pillars located between the plate portion and the thermal conductive bonding layer, wherein the plurality of first pillars are in direct contact with the thermal conductive bonding layer.
2. The semiconductor device as claimed in claim 1 , further comprising:
a backside metal layer disposed between the thermal conductive bonding layer and the semiconductor package.
3. The semiconductor device as claimed in claim 2 ,
wherein the plurality of first pillars are located between the thermal conductive bonding layer and the backside metal layer.
4. The semiconductor device as claimed in claim 2 , wherein the plurality of first pillars, the plate portion and the frame portion are integrally formed, and the thermal conductive bonding layer is disposed between the backside metal layer and the plurality of first pillars.
5. The semiconductor device as claimed in claim 4 , wherein the semiconductor package has a plurality of cavities on a backside surface of the semiconductor package, the backside metal layer is disposed on the backside surface and located in the plurality of cavities, the thermal conductive bonding layer comprises a plurality of bonding patterns located in a portion of the plurality of cavities, the plurality of first pillars are inserted into the portion of the plurality of cavities and are in contact with the plurality of bonding patterns.
6. The semiconductor device as claimed in claim 5 , wherein the lid has a plurality of filling holes connected to a gap located between the lid and the semiconductor package, and the semiconductor device further comprising:
a filling material layer filled in the gap and the plurality of filling holes.
7. The semiconductor device as claimed in claim 1 , further comprising:
a cover disposed on the lid and comprising an inflow channel and an outflow channel to allow coolant to flow into and out of a space between the lid and the cover.
8. The semiconductor device as claimed in claim 7 , further comprising:
a plurality of second pillars disposed over the semiconductor package and located between the lid and the cover.
9. The semiconductor device as claimed in claim 8 , wherein the plurality of second pillars are connected to the lid.
10. The semiconductor device as claimed in claim 8 , further comprising:
a plurality of bonding patterns disposed between the lid and the plurality of second pillars.
11. The semiconductor device as claimed in claim 7 , wherein the lid and the cover are fixed together through screws, welding, buckles, a seal ring or a combination thereof.
12. The semiconductor device as claimed in claim 1 , further comprising:
a passive component disposed on the substrate and beside the semiconductor package,
wherein the plate portion further covers the passive component, and the passive component is also enclosed by the substrate, the frame portion and the plate portion.
13. The semiconductor device as claimed in claim 12 , wherein the frame portion and the plate portion are fixed together through screws, adhesives or combination thereof.
14. The semiconductor device as claimed in claim 12 , wherein the lid further comprises:
an auxiliary support portion located between the semiconductor package and the passive component and supported between the plate portion and the underfill.
15. The semiconductor device as claimed in claim 1 , wherein the lid comprises two parts separated from each other and respectively covered on opposite sides of the semiconductor package, each of the two parts comprises
the plate portion and the frame portion, wherein the underfill is further located between the frame portion and the substrate.
16. The semiconductor device as claimed in claim 15 , wherein a space is between the plate portions of the two parts, and a portion of the thermal conductive bonding layer is located in the space, and the semiconductor device further comprises:
a thermal conductive material layer filled in the space.
17. The semiconductor device as claimed in claim 16 , further comprising:
a thermal conductive body located in the space and spaced apart from the plate portion of each of the two parts, wherein the thermal conductive material layer is filled between the plate portion of each of the two parts and the thermal conductive body.
18. The semiconductor device as claimed in claim 1 , further comprising:
an adhesion enhancement layer disposed between the semiconductor package and the thermal conductive bonding layer;
wherein the thermal conductive bonding layer is in contact with the adhesion enhancement layer, sidewall of the semiconductor package and the underfill.
19. A semiconductor device, comprising:
a substrate;
a semiconductor package disposed on the substrate;
an underfill disposed between the semiconductor package and the substrate;
an encapsulant disposed on the underfill and the substrate;
a backside metal layer disposed on the semiconductor package and the encapsulant, wherein the backside metal layer is a stacked layer of at least three layers;
a plurality of bonding patterns disposed on the backside metal layer and located over the semiconductor package;
a plurality of pillars disposed on the plurality of bonding patterns;
a lid comprising a plate portion and a frame portion, wherein the plate portion covers the semiconductor package, the encapsulant and the frame portion, and the plate portion is supported by the frame portion on the substrate; and
an O shaped seal ring disposed on the backside metal layer,
wherein the plate portion comprises an inflow channel and an outflow channel to allow coolant to flow into and out of a space between the plate portion, the O shaped seal ring, the backside metal layer, the plurality of bonding patterns, and the plurality of pillars.
20. A semiconductor device, comprising:
a substrate;
a semiconductor package disposed on the substrate;
an underfill disposed between the semiconductor package and the substrate;
an encapsulant disposed on the underfill and the substrate;
a backside metal layer disposed on the semiconductor package, the encapsulant, and the substrate;
a plurality of bonding patterns disposed on the backside metal layer and located over the semiconductor package;
a plurality of pillars disposed on the plurality of bonding patterns;
a lid comprising a plate portion and a frame portion, wherein the plate portion covers the semiconductor package and the encapsulant, the frame portion is located at edges of the plate portion and is fixed on the substrate; and
an O shaped seal ring disposed on the backside metal layer and located in the frame portion,
wherein the plate portion comprises an inflow channel and an outflow channel to allow coolant to flow into and out of a space between the plate portion, the frame portion, the backside metal layer, the plurality of bonding patterns, and the plurality of pillars.