IP Library › Granted Patent US 11,574,868
Granted Patent B2
US 11,574,868 · App. 17/022,718 · Granted Feb 7, 2023

Fan-out semiconductor packages

Inventors: Joonsung Kim (Suwon-si, KR); Khaile Kim (Sejong-si, KR)
H01L23/528H01L23/3178H01L23/49861H01L24/05
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Quick Facts
Patent No.
US 11,574,868
App. No.
17/022,718
Granted
Feb 7, 2023
Kind
B2
Abstract

A fan-out semiconductor package includes a frame substrate having a through hole therein, a semiconductor chip in the through hole, wherein the semiconductor chip includes a chip body, a chip pad on a surface of the chip body and a passivation layer on the chip body and on the chip pad, an encapsulation layer on side surfaces of the semiconductor chip within the through hole, and a guard ring on the passivation layer and on an edge portion of the chip body.

Claims (36)

1. A fan-out semiconductor package comprising:

a frame substrate comprising a through hole therein;

a semiconductor chip in the through hole, wherein the semiconductor chip comprises a chip body, a chip pad on a surface of the chip body, and a passivation layer on the chip body and on the chip pad;

an encapsulation layer on side surfaces of the semiconductor chip within the through hole; and

a guard ring on the passivation layer, on an edge portion of the chip body, and in direct contact with the encapsulation layer.

2. The fan-out semiconductor package of claim 1 , wherein the guard ring comprises a continuous layer extending along a perimeter of the chip body in a plan view.

3. The fan-out semiconductor package of claim 1 , wherein the guard ring is in contact with the passivation layer.

4. The fan-out semiconductor package of claim 1 , wherein the guard ring is in contact with a side surface of the encapsulation layer.

5. The fan-out semiconductor package of claim 1 , wherein a re-wiring structure that is electrically connected to the chip pad is on the frame substrate and on a surface of the semiconductor chip.

6. The fan-out semiconductor package of claim 1 , wherein a multi-layer wiring structure is within the frame substrate, and

wherein a re-wiring structure that is electrically connected to the chip pad and the multi-layer wiring structure is on the frame substrate and on a top surface of the semiconductor chip.

7. The fan-out semiconductor package of claim 1 , wherein the encapsulation layer is on a bottom surface of the chip body.

8. The fan-out semiconductor package of claim 1 , wherein the encapsulation layer is on the edge portion of the chip body and an edge portion of the passivation layer.

9. The fan-out semiconductor package of claim 1 , wherein a bottom surface of the chip body is at a lower level than a bottom surface of the frame substrate.

10. A fan-out semiconductor package comprising:

a frame substrate comprising a through hole therein;

a semiconductor chip in the through hole, wherein the semiconductor chip comprises a chip body, at least one chip pad on a surface of the chip body, a capping layer on the at least one chip pad, and a passivation layer on the chip body, on sides of the at least one chip pad, and on part of the capping layer;

an encapsulation layer on side surfaces of the semiconductor chip within the through hole; and

a guard ring on the passivation layer and on an edge portion of the chip body, the guard ring having a top surface at a level that is equal to or higher than a top surface of the encapsulation layer, and wherein the top surface of the guard ring is coplanar with a top surface of the capping layer.

11. The fan-out semiconductor package of claim 10 , wherein the guard ring comprises a continuous layer extending along a perimeter of the chip body in a plan view.

12. The fan-out semiconductor package of claim 10 , wherein a top surface of the passivation layer is at a lower level than the top surface of the encapsulation layer, and the guard ring is in contact with a side surface of the encapsulation layer.

13. The fan-out semiconductor package of claim 10 , wherein the capping layer comprises a recess portion that is recessed from the top surface of the capping layer.

14. The fan-out semiconductor package of claim 10 , wherein a re-wiring structure and a re-wiring pad electrically connected to the chip pad are on the frame substrate and on a surface of the semiconductor chip, and

wherein a package that is electrically connected to the re-wiring pad is on the re-wiring structure.

15. The fan-out semiconductor package of claim 10 , further comprising a crack-reducing ring on an edge portion of a top surface of the chip body,

wherein the crack-reducing ring is within the passivation layer.

16. A fan-out semiconductor package comprising:

a frame substrate comprising a through hole therein;

a semiconductor chip in the through hole, wherein the semiconductor chip comprises a chip body, at least one chip pad on a surface of the chip body, and a passivation layer on the chip body and on side surfaces of the at least one chip pad, wherein a bottom surface of the chip body is at a same level as a bottom surface of the frame substrate;

an encapsulation layer on side surfaces of the semiconductor chip within the through hole; and

a guard ring on the passivation layer and on an edge portion of the chip body, the guard ring having a top surface at a level that is equal to or higher than a top surface of the encapsulation layer.

17. The fan-out semiconductor package of claim 16 , further comprising a capping layer on the at least one chip pad,

wherein a top surface of the capping layer and the top surface of the guard ring are at a same level.

18. The fan-out semiconductor package of claim 16 , wherein the top surface of the encapsulation layer is at a same level as a top surface of the passivation layer.

19. The fan-out semiconductor package of claim 16 , wherein the guard ring is in contact with the passivation layer.

20. The fan-out semiconductor package of claim 16 , wherein the guard ring continuously extends along a perimeter of the chip body in a plan view.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2020
From: KIM, JOONSUNG; KIM, KHAILE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 053800/0648 →
Priority Claims (1)
KR 10-2019-0168140 · Dec 16, 2019 · national
Continuity (1)
Related Publication 20210183762A1 · Jun 17, 2021
Cited By (1)
US 12,713,946