Semiconductor device and method of forming the same

1. A method of forming a semiconductor device, the method comprising:

depositing a first conductive plate and a second conductive plate adjacent to the first conductive plate;

depositing a first insulating plate on the first conductive plate and the second conductive plate;

depositing a third conductive plate on the first insulating plate;

depositing a second insulating plate on the third conductive plate;

forming a fourth conductive plate including an opening on the second insulating plate;

forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate, wherein the first conductive via is electrically coupled to the fourth conductive plate and the first conductive plate; and

forming a second conductive via penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate, wherein the second conductive via is electrically coupled to the third conductive plate and the second conductive plate.

2. The method of claim 1 , wherein the first insulating plate covers a sidewall of the first conductive plate and a sidewall of the second conductive plate.

3. The method of claim 1 , wherein the first insulating plate is in contact with the second insulating plate at the first conductive via.

4. The method of claim 1 , further comprising forming an integrated circuit (IC) device, wherein the first conductive plate and the second conductive plate are formed over the IC device.

5. The method of claim 1 , further comprising:

forming a fifth conductive plate on the first insulating plate;

forming a sixth conductive plate on the second insulating plate; and

forming a third conductive via penetrating the sixth conductive plate, the second insulating plate, the fifth conductive plate, and the first insulating plate, wherein the third conductive via is electrically coupled to the sixth conductive plate and the fifth conductive plate.

6. The method of claim 5 , wherein the fifth conductive plate, the first conductive plate and the second conductive plate are formed using a first fabricating process, and the sixth conductive plate and the fourth conductive plate are formed using a second fabricating process.

7. The method of claim 5 , wherein forming the fourth conductive plate comprises depositing a seven conductive plate on the second insulating plate and patterning the seven conductive plate to form the fourth conductive plate.

8. The method of claim 7 , wherein patterning the seven conductive plate comprises forming a spacer on the second insulating plate separated from the fourth conductive plate.

9. A method of forming a semiconductor device, the method comprising:

depositing a first conductive plate and a second conductive plate;

depositing a first insulating plate on the first conductive plate and the second conductive plate;

depositing a third conductive plate on the first insulating plate;

depositing a second insulating plate on the third conductive plate;

depositing a fourth conductive plate on the second insulating plate, the fourth conductive plate including an opening over the second insulating plate;

forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate; and

forming a second conductive via through the opening and penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate.

10. The method of claim 9 , further comprising:

forming a fifth conductive plate on the first insulating plate;

forming a sixth conductive plate on the second insulating plate; and

forming a third conductive via penetrating the sixth conductive plate, the second insulating plate, the fifth conductive plate, and the first insulating plate, wherein the third conductive via is electrically coupled to the sixth conductive plate and the fifth conductive plate.

11. The method of claim 10 , wherein the fifth conductive plate and the third conductive plate are formed using a first fabricating process, and the sixth conductive plate and the fourth conductive plate are formed using a second fabricating process.

12. The method of claim 9 , further comprising:

forming a fifth conductive plate;

forming a sixth conductive plate on the first insulating plate, wherein the second insulating plate is further formed on the sixth conductive plate; and

forming a third conductive via penetrating the second insulating plate, the sixth conductive plate, the first insulating plate, and the fifth conductive plate, wherein the third conductive via is electrically coupled to the sixth conductive plate and the fifth conductive plate.

13. The method of claim 12 , wherein the fifth conductive plate, the first conductive plate, and the second conductive plate are formed using a first fabricating process, and the sixth conductive plate and the third conductive plate are formed using a second fabricating process.

14. The method of claim 9 , further comprising:

forming a fifth conductive plate, wherein the first insulating plate is further formed on the fifth conductive plate, and the second insulating plate is further formed on the first insulating plate;

forming a sixth conductive plate on the second insulating plate; and

forming a third conductive via penetrating the sixth conductive plate, the first insulating plate, the second insulating plate, and the fifth conductive plate, wherein the third conductive via is electrically coupled to the sixth conductive plate and the fifth conductive plate.

15. The method of claim 14 , wherein the fifth conductive plate, the first conductive plate, and the second conductive plate are formed using a first fabricating process, and the sixth conductive plate and the fourth conductive plate are formed using a second fabricating process.