Cooling apparatuses for microelectronic assemblies
Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the surface of the package substrate; and a cooling apparatus that may include a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in thermal contact with the second surface of the die, and a plurality of conductive structures on the second surface of the conductive base, wherein an individual conductive structure of the plurality of conductive structures has a width between 10 microns and 100 microns.
1. A microelectronic assembly, comprising:
a package substrate having a surface;
a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the surface of the package substrate;
a cooling apparatus, comprising:
a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in thermal contact with the second surface of the die;
a plurality of conductive structures on the second surface of the conductive base, wherein an individual conductive structure of the plurality of conductive structures has a width between 10 microns and 100 microns; and
at least two conductive features extending from the first surface of the conductive base attached to the surface of the package substrate; and
a conductive lid, wherein the conductive lid is on a top surface of the plurality of conductive structures, and wherein the conductive lid forms a cavity around the plurality of conductive structures.
2. The microelectronic assembly of claim 1 , wherein individual conductive structures of the plurality of conductive structures have a height between 1 mm and 2 mm.
3. The microelectronic assembly of claim 1 , wherein an individual one of the plurality of conductive structures has an aspect ratio between 10:1 and 20:1.
4. The microelectronic assembly of claim 1 , wherein a channel between adjacent individual ones of the conductive structures has a width between 10 microns and 200 microns.
5. The microelectronic assembly of claim 1 , wherein at least one of the plurality of conductive structures is a vertical fin.
6. The microelectronic assembly of claim 5 , wherein the vertical fin has a surface that is non-linear.
7. The microelectronic assembly of claim 1 , wherein at least one of the plurality of conductive structures is a pillar.
8. The microelectronic assembly of claim 1 , wherein a first individual one of the plurality of conductive structures is a pillar and a second individual one of the plurality of conductive structures is a vertical fin.
9. The microelectronic assembly of claim 1 , further comprising:
a fluid in the cavity.
10. A microelectronic assembly, comprising:
a package substrate having a first surface and an opposing second surface;
a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate;
a cooling apparatus, comprising:
a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in contact with the second surface of the die;
a plurality of conductive structures on the second surface of the conductive base, wherein the plurality of conductive structures are attached to the second surface of the conductive base; and
at least two conductive features extending from the first surface of the conductive base attached to the second surface of the package substrate; and
a conductive seed layer between the second surface of the conductive base and the plurality of conductive structures.
11. The microelectronic assembly of claim 10 , wherein the conductive base includes a first material and the plurality of conductive structures include a second material different from the first material.
12. The microelectronic assembly of claim 11 , wherein the first material includes copper.
13. The microelectronic assembly of claim 11 , wherein the second material includes nickel.