IP Library › Granted Patent US 11,583,875
Granted Patent B2
US 11,583,875 · App. 17/223,620 · Granted Feb 21, 2023

Systems and methods of electron beam induced processing

Inventor: Andrei G. Fedorov (Atlanta, GA)
Assignee: Georgia Tech Research Corporation
B05B5/16B05B5/035B05D1/04B05D3/068B82Y10/00C23C18/145
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Quick Facts
Patent No.
US 11,583,875
App. No.
17/223,620
Granted
Feb 21, 2023
Kind
B2
Abstract

Embodiments of the present disclosure provide for methods and systems for making structures using an electrospray system while under vacuum. In particular, embodiments of the present disclosure provide for methods and systems for ultra-fast growth of high aspect ratio nano/meso/micro-structures with three dimensional topological complexity and control of phase and composition of the structure formed.

Claims (24)

1. A method, comprising:

forming a liquid film by electrospray using an electrospray system on a substrate in a vacuum;

directing an electron beam into a first area of the liquid film, wherein the electron beam is transmitted to the liquid film in the vacuum; and one or both of:

forming a first structure, wherein the liquid film includes a first liquid, wherein the first structure is formed in the first area from the interaction of the electron beam with the first liquid, and

forming a second structure, wherein the liquid film includes a second liquid, wherein the second structure is formed by etching with the second liquid and the electron beam, wherein the when second liquid contains an acid.

2. The method of claim 1 , wherein the electrospray system includes two or more electrospray capillary tips, wherein each electrospray capillary tip independently directs one of the first liquid or the second liquid onto the substrate, wherein the liquid from each electrospray capillary tip is the same or different.

3. The method of claim 1 , including: forming the first structure and further comprising: etching the first structure through the interaction of the electron beam and a third liquid, wherein the third liquid contains an acid.

4. The method of claim 3 , further comprising: forming a third structure, wherein the third structure is formed in a second area from the interaction of the electron beam with the first liquid, wherein the first area and the second area are not the same.

5. The method of claim 1 , including: forming the first structure, and forming the second structure.

6. The method of claim 1 , wherein etching includes forming the second structure from the substrate.

7. The method of claim 1 , wherein forming the first structure includes a growth rate of about 0.1 μm 3 /s to about 10 μm 3 /s.

8. The method of claim 7 , wherein the vacuum is a pressure of 10 −6 to 30 Torr.

9. The method of claim 8 , wherein the liquid film has a thickness of about 10 nm to 1 μm and has a width is about 10 μm to 10 mm.

10. The method of claim 9 , further comprising controlling the thickness of the liquid film.

11. The method of claim 10 , wherein controlling the thickness of the liquid film includes one selected from the group consisting of: controlling the spreading of the liquid, controlling the evaporation of the liquid, controlling the rate of liquid delivery, and a combination thereof.

12. The method of claim 10 , wherein controlling the thickness of the liquid film includes one selected from the group consisting of: adjusting an electrospray bias of the electrospray capillary tip used to form the liquid film, adjusting a distance between the electrospray capillary tip from the liquid film, and a combination thereof.

13. The method of claim 1 , wherein forming the liquid film is performed using liquid delivery using an electrospray capillary tip that is about 1 mm to 10 mm away from the substrate.

14. The method of claim 1 , wherein the liquid is selected from the group consisting of: an aqueous solvent, an organic solvent, an electrochemically active compound, and a combination thereof.

15. The method of claim 1 , wherein the first structure is a carbon structure, a metal structure, a metal alloy structure, a metal-carbon structure, a metal-polymer structure, and a carbon-biological material structure.

16. The method of claim 1 , wherein the first structure has a diameter of about 5 nm to 5 μm and a height of about 1 nm to 50 μm.

17. The method of claim 1 , wherein the first structure is selected from the group consisting of: a pillar, a bridge structure, an overhang structure, a suspended cantilever, a hollow volcano-like fiber, a wall-like structure, a porous 3D scaffold, a scaffold, and suspended grid array of interconnected lines.

18. The method of claim 1 , wherein the electron beam has an energy of about 0.3 to 40 keV with a current of about 1 pA to 1 ρA.

19. The method of claim 1 , further comprising: applying an electric field of about 500 V/mm to 1500 V/mm relative to a ground electrode of the electrospray system in order to induce electrospray.

20. The method of claim 1 , wherein forming the first structure, forming the second structure, or a combination of thereof includes forming the first structure, the second structure, or both adjacent to a biological material, wherein forming the first structure, forming the second structure, or a combination of thereof includes forming a scaffold, wherein the biological material and the scaffold are integral to one another.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2022
From: FEDOROV, ANDREI G.
To: GEORGIA TECH RESEARCH CORPORATION
Reel/Frame 062189/0141 →
Continuity (3)
Division 15577130
Provisional Application 62167596 · May 28, 2015
Related Publication 20210245182A1 · Aug 12, 2021