Semiconductor device and manufacturing method of the semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming a sacrificial group above a well structure;

forming a stack structure above the sacrificial group;

forming a slit passing through the stack structure and extending into the sacrificial group;

forming a horizontal space by removing the sacrificial group through the slit;

forming a semiconductor pattern on a surface of the horizontal space to define a gap in the horizontal space; and

forming a source junction in the semiconductor pattern.

2. The method of claim 1 , wherein the forming of the semiconductor pattern comprises forming a semiconductor layer along surfaces of the horizontal space and the slit so that the semiconductor pattern extends on a sidewall of the slit and the gap opens towards the slit.

3. The method of claim 2 wherein the forming of the source junction comprises:

forming an insulating layer filling the gap in the horizontal space defined by the semiconductor pattern; and

injecting an impurity into the semiconductor pattern disposed on the surface of the slit through the slit.

4. The method of claim 2 , wherein the stack structure includes interlayer insulating layers and sacrificial layers alternately stacked on each other,

the method further comprising before removing the sacrificial group:

replacing the sacrificial layers by conductive patterns; and

forming a spacer insulating layer and a multilayer protective layer on the sidewall of the slit including a sidewall of the conductive patterns.

5. The method of claim 1 , wherein the forming of the semiconductor pattern comprises forming a semiconductor layer so that the gap and the slit are isolated from each other.

6. The method of claim 5 , wherein the forming of the source junction comprises:

forming a first doping region including an impurity at a first concentration in the semiconductor pattern exposed through the slit;

forming an insulating spacer on the sidewall of the slit; and

forming a second doping region including the impurity at a second concentration higher than the first concentration in the first doping region not blocked by the insulating spacer.

7. The method of claim 5 , wherein the stack structure includes interlayer insulating layers and sacrificial layers alternately stacked on each other,

the method further comprising replacing the sacrificial layers with conductive patterns after forming the semiconductor pattern.

8. A method of manufacturing a semiconductor device, the method comprising:

forming a sacrificial group on a well structure;

forming a stack structure including first and second material layers alternately stacked on each other on the sacrificial group;

forming a slit passing through the stack structure and extending into the sacrificial group;

opening a horizontal space by removing the sacrificial group through the slit;

forming a semiconductor layer along a surface of the horizontal space and a surface of the slit such that a gap opened by the semiconductor layer is defined in each of the slit and the horizontal space;

forming a select channel pattern by removing a portion of the semiconductor layer so that the semiconductor layer remains lower than the slit;

forming a gap-fill insulating pattern filling the gap in the horizontal space and being lower than the select channel pattern; and

forming a source junction in the select channel pattern protruding farther than the gap-fill insulating pattern.

9. The method of claim 8 , further comprising forming a common source line on the gap-fill insulating pattern, the common source line directly contacting the source junction, protruding farther into the slit than the source junction, and filling the slit.

10. The method of claim 8 , further comprising:

forming holes passing through the stack structure and extending into the well structure;

forming a multilayer memory layer on a surface of each of the holes; and

forming a channel pillar on the multilayer memory layer.

11. The method of claim 10 , further comprising forming an auxiliary channel layer on the sacrificial group before forming the stack structure,

wherein the auxiliary channel layer is penetrated by the holes.

12. The method of claim 11 , wherein the opening of the horizontal space comprises removing a portion of the multilayer memory layer between the well structure and the channel pillar from between the auxiliary channel layer and the channel pillar to form a first ring type groove between the auxiliary channel layer and the channel pillar, and a second ring type groove between the well structure and the channel pillar.

13. The method of claim 12 , wherein the select channel pattern fills the first and second ring type grooves and directly contacts the well structure, the auxiliary channel layer, and the channel pillar.

14. The method of claim 8 , wherein a lowermost layer disposed at a lowermost level among the first material layers of the stack structure has a smaller thickness than the rest of the first material layers.

15. The method of claim 8 , further comprising forming a channel pillar passing through the stack structure and extending into the well structure,

wherein the channel pillar is exposed by the horizontal space.

16. The method of claim 15 ,

wherein the semiconductor layer and the select channel pattern directly contact the well structure and the channel pillar, and

wherein the forming of the gap-fill insulating pattern filling the gap in the horizontal space and being lower than the select channel pattern comprises:

filling the slit and the horizontal space opened by the select channel pattern with an insulating material; and

patterning the gap-fill insulating pattern by removing a portion of the insulating material to expose an end portion of the select channel pattern protruding into the slit.

17. The method of claim 15 ,

wherein the semiconductor layer and the select channel pattern directly contact the well structure and the channel pillar,

wherein the forming of the gap-fill insulating pattern filling the gap in the horizontal space and being lower than the select channel pattern comprises:

completely filling the slit opened by the semiconductor layer with an insulating material;

primarily etching the insulating material so that the insulating material is lower than the slit;

and

patterning the gap-fill insulating pattern by secondarily etching the insulating material primarily etched to expose an end portion of the select channel pattern protruding into the slit, and

wherein the select channel pattern is formed by etching the semiconductor layer using the insulating material primarily etched as an etching barrier.

18. The method of claim 8 , wherein the well structure includes a first conductivity type impurity.

19. The method of claim 18 , wherein the forming of the source junction comprises:

forming a doping region by injecting a second conductivity type impurity different from the first conductivity type impurity to a predetermined thickness from a surface of the select channel pattern protruding farther than the gap-fill insulating pattern; and

performing a heat treatment process so that the second conductivity type impurity diffuses into the select channel pattern from the doping region and the second conductivity type impurity is activated.

20. The method of claim 8 , further comprising before opening the horizontal space:

forming a gate stack structure by replacing the first material layers or the second material layers with third material layers through the slit;

forming a spacer insulating layer and a multilayer protective layer along a surface of the gate stack structure; and

removing a portion of the spacer insulating layer and a portion of the multilayer protective layer to expose the sacrificial group through a bottom surface of the slit.

21. The method of claim 20 , wherein the first material layers are insulating layers,

wherein the second material layers are sacrificial materials having different etch rate from the insulating layers, and

wherein the third material layers replacing the second material layers are conductive materials.