Memory device and method of forming the same
A memory device includes a multi-layer stack, a plurality of channel layers and a plurality of ferroelectric layers. The multi-layer stack is disposed on a substrate and includes a plurality of gate layers and a plurality of dielectric layers stacked alternately. The plurality of channel layers penetrate through the multi-layer stack and are laterally spaced apart from each other, wherein the plurality of channel layers include a first channel layer and a second channel layer, and a first electron mobility of the first channel layer is different from a second electron mobility of the second channel layer. Each of the plurality of channel layers are spaced apart from the multi-layer stack by one of the plurality of ferroelectric layers, respectively.
1. A memory device, comprising:
a multi-layer stack, disposed on a substrate and comprising a plurality of gate layers and a plurality of dielectric layers stacked alternately;
a plurality of channel layers, penetrating through the multi-layer stack and laterally spaced apart from each other, wherein the plurality of channel layers comprise a first channel layer and a second channel layer, and a first electron mobility of the first channel layer is different from a second electron mobility of the second channel layer;
a plurality of ferroelectric layers, wherein each of the plurality of channel layers are spaced apart from the multi-layer stack by one of the plurality of ferroelectric layers, respectively.
2. The memory device as claimed in claim 1 , wherein the plurality of channel layers further comprises a third channel layer, and a third electron mobility of the third channel layer is different from the first electron mobility of the first channel layer and the second electron mobility of the second channel layer.
3. The memory device as claimed in claim 2 , wherein the second electron mobility of the second channel layer is about two times the first electron mobility of the first channel layer, and the third electron mobility of the third channel layer is about two times the second electron mobility of the second channel layer.
4. The memory device as claimed in claim 2 , further comprising plural pairs of source/drain pillars, and the plural pairs of source/drain pillars comprise:
a first source pillar and a first drain pillar, disposed aside the first channel layer;
a second source pillar and a second drain pillar, disposed aside the second channel layer; and
a third source pillar and a third drain pillar, disposed aside the third channel layer.
5. The memory device as claimed in claim 4 , further comprising:
a bit line, electrically connected to the first drain pillar, the second drain pillar and the third drain pillar.
6. The memory device as claimed in claim 4 , further comprising an isolation, wherein the isolation separates the plural pairs of the source/drain pillars.
7. The memory device as claimed in claim 2 , further comprising a dielectric isolation penetrating through the multi-layer stack, wherein the multi-layer stack comprises first, second and third multi-layer stacks spaced apart from each other by the dielectric isolation, and the first, second and third channel layers are embedded in the first, second and third multi-layer stacks, respectively.
8. A memory device, comprising:
a plurality of gate layers, disposed over a substrate and vertically spaced apart from each other;
a first channel pillar, penetrating through the plurality of gate layers;
a first ferroelectric sheath, covering a sidewall of the first channel pillar;
a second channel pillar, penetrating through the plurality of gate layers, wherein a first electron mobility of the first channel pillar is less than a second electron mobility of the second channel pillar; and
a second ferroelectric sheath, covering a sidewall of the second channel pillar.
9. The memory device as claimed in claim 8 , further comprising:
a third channel pillar, penetrating through the plurality of gate layers, wherein a third electron mobility of the third channel pillar is greater than the second electron mobility of the second channel pillar; and
a third ferroelectric sheath, covering a sidewall of the third channel pillar.
10. The memory device as claimed in claim 9 , further comprising:
a bit line, electrically coupled to first ends of the first, second and third channel pillars.
11. The memory device as claimed in claim 10 , further comprising:
a common source, electrically coupled to second ends of the first, second and third channel pillars opposite to the first ends of the first, second and third channel pillars.
12. The memory device as claimed in claim 9 , further comprising a dielectric isolation penetrating through the plurality of gate layers, wherein the dielectric isolation separates the first, second and third channel pillars.