Semiconductor device
A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor.
1. A semiconductor device comprising a pixel, the pixel comprising:
first to fourth transistors; and
first and second capacitors,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and a first terminal of the first capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the fourth transistor and a first terminal of the second capacitor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the second transistor, a second terminal of the first capacitor and a second terminal of the second capacitor,
wherein a semiconductor film functions as an active layer of at least one of the first, second and fourth transistors, and
wherein the semiconductor film functions as one of the first terminal of the first capacitor, the second terminal of the first capacitor, the first terminal of the second capacitor, and the second terminal of the second capacitor.
2. The semiconductor device according to claim 1 , further comprising:
a light-emitting element electrically connected to the one of the source and the drain of the first transistor.
3. The semiconductor device according to claim 1 , further comprising:
a fifth transistor electrically connected to the one of the source and the drain of the first transistor.
4. The semiconductor device according to claim 1 , further comprising:
a fifth transistor electrically connected to the other of the source and the drain of the first transistor.
5. The semiconductor device according to claim 1 , wherein the first to fourth transistors are n-channel transistors.
6. The semiconductor device according to claim 1 , wherein the semiconductor film comprises an oxide semiconductor.
7. A semiconductor device comprising a pixel, the pixel comprising:
first to fourth transistors; and
first and second capacitors,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and a first terminal of the first capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the fourth transistor and a first terminal of the second capacitor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the second transistor, and
wherein a semiconductor film functions as an active layer of the second transistor and an active layer of the fourth transistor.
8. The semiconductor device according to claim 7 , further comprising:
a light-emitting element electrically connected to the one of the source and the drain of the first transistor.
9. A semiconductor device comprising a pixel, the pixel comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor;
a first capacitor; and
a light-emitting element,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the third transistor and a first terminal of the first capacitor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
wherein the other of the source and a drain of the first transistor is electrically connected to a first wiring which is a power supply line,
wherein one of a source and a drain of the second transistor is electrically connected to a second wiring which is a signal line,
wherein one of a source and a drain of the fifth transistor is electrically connected to the light-emitting element,
wherein the other of the source and the drain of the fifth transistor is electrically connected to a third wiring,
wherein a gate of the third transistor is electrically connected to a first gate line,
wherein a gate of the fourth transistor is electrically connected to a second gate line,
wherein a gate of the fifth transistor is electrically connected to a third gate line,
wherein a semiconductor film functions as an active layer of each of the first transistor, the second transistor, the fourth transistor, and the fifth transistor, and
wherein a first conductive film functioning as the first gate line, a second conductive film functioning as the second gate line, and a third conductive film functioning as the third gate line extend in the same direction.
10. The semiconductor device according to claim 9 , further comprising:
a first gate driver electrically connected to the first gate line;
a second gate driver electrically connected to the second gate line; and
a third gate driver electrically connected to the third gate line.
11. The semiconductor device according to claim 9 , wherein a channel length of the first transistor is larger than a channel length of each of the second transistor, the third transistor, the fourth transistor, and the fifth transistor.
12. The semiconductor device according to claim 9 , wherein a channel length of the first transistor is greater than 20 μm or more.
13. The semiconductor device according to claim 9 , wherein the semiconductor film is a polycrystalline semiconductor film.