Photoelectric conversion device, photoelectric conversion system, and moving body

1. A photoelectric conversion device comprising:

a photoelectric conversion region configured to generate a signal charge;

a readout circuit configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a portion of the signal charge; and

a counting circuit configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout,

wherein the readout circuit includes a first readout circuit configured to perform the first readout and a second readout circuit configured to perform the second readout, and

wherein the first readout circuit includes the counting circuit.

2. The photoelectric conversion device according to claim 1 , wherein the readout circuit performs the first readout with respect to a first portion of the signal charge generated at the photoelectric conversion region during a predetermined period, and performs the second readout with respect to a second portion of the signal charge generated at the photoelectric conversion region during the predetermined period.

3. The photoelectric conversion device according to claim 1 , wherein the readout circuit performs the first readout with respect to all of the signal charge generated at the photoelectric conversion region during a first period, and performs the second readout with respect to all of the signal charge generated at the photoelectric conversion region during a second period different from the first period.

4. The photoelectric conversion device according to claim 1 , wherein the readout circuit selects whether to perform the first readout or whether to perform the second readout according to an amount of the signal charge generated at the photoelectric conversion region.

5. The photoelectric conversion device according to claim 4 , wherein, in a case where an amount of the signal charge generated at the photoelectric conversion region is smaller than a predetermined amount, the readout circuit performs the first readout with respect to all of the signal charge.

6. The photoelectric conversion device according to claim 5 , wherein the predetermined amount is a saturation charge amount of the photoelectric conversion region.

7. The photoelectric conversion device according to claim 1 , wherein, in a case where an amount of the signal charge generated at the photoelectric conversion region exceeds a predetermined amount, the readout circuit performs the first readout with respect to a first portion equivalent to the predetermined amount of the signal charge, and performs the second readout with respect to a second portion different from the first portion of the signal charge.

8. The photoelectric conversion device according to claim 7 , further comprising a charge accumulation region,

wherein the second portion is the signal charge which has overflowed from the photoelectric conversion region and then has been accumulated in the charge accumulation region.

9. The photoelectric conversion device according to claim 1 , wherein the readout circuit selects whether to perform the first readout or whether to perform the second readout according to switching of modes.

10. The photoelectric conversion device according to claim 1 , wherein the second readout circuit includes a floating diffusion and a source-follower transistor.

11. The photoelectric conversion device according to claim 1 ,

wherein the readout circuit includes a single readout circuit, and

wherein the readout circuit is configured to perform both the first readout and the second readout.

12. The photoelectric conversion device according to claim 1 ,

wherein the photoelectric conversion region includes a first semiconductor region having a first conductivity type in which carriers having a first polarity that is the same polarity as that of the signal charge are set as a majority carrier and accumulating the signal charge,

wherein the readout circuit includes a second semiconductor region having a second conductivity type in which carriers having a second polarity are set as a majority carrier, and a third semiconductor region of the first conductivity type to which the signal charge is transferred from the first semiconductor region,

wherein, when at least the signal charge is transferred to the third semiconductor region, a reverse bias voltage for causing the avalanche multiplication caused by the signal charge to occur is applied to between the second semiconductor region and the third semiconductor region,

wherein a potential barrier lower in height than the reverse bias voltage with respect to the signal charge present in the first semiconductor region is formed between the first semiconductor region and the third semiconductor region, and

wherein the readout circuit performs the first readout while transferring the signal charge from the first semiconductor region to the third semiconductor region by controlling the height of the potential barrier.

13. The photoelectric conversion device according to claim 12 ,

wherein the readout circuit further includes a fourth semiconductor region of the first conductivity type, and

wherein the readout circuit performs the second readout with respect to the signal charge which has been transferred from the first semiconductor region to the fourth semiconductor region.

14. The photoelectric conversion device according to claim 13 , wherein the third semiconductor region is lower in impurity concentration than the fourth semiconductor region.

15. The photoelectric conversion device according to claim 14 , wherein a height of a potential barrier present between the first semiconductor region and the third semiconductor region when the first semiconductor region is accumulating the signal charge is higher than a height of a potential barrier present between the first semiconductor region and the fourth semiconductor region.

16. The photoelectric conversion device according to claim 15 , wherein a height of a potential barrier present between the first semiconductor region and the third semiconductor region when the signal charge is being transferred to the third semiconductor region is lower than a height of a potential barrier present between the first semiconductor region and the fourth semiconductor region.

17. The photoelectric conversion device according to claim 15 ,

wherein the readout circuit further includes a fifth semiconductor region of the first conductivity type, and

wherein the signal charge transferred to the fourth semiconductor region is transferred to the fifth semiconductor region and is then read out.

18. The photoelectric conversion device according to claim 17 ,

wherein a gate electrode is arranged between the fourth semiconductor region and the fifth semiconductor region in planar view, and

wherein transfer of the signal charge from the fourth semiconductor region to the fifth semiconductor region is performed by a potential supplied to the gate electrode being changed.

19. The photoelectric conversion device according to claim 17 ,

wherein the readout circuit further includes a source-follower transistor connected to the fifth semiconductor region, and a sixth semiconductor region of the second conductivity type which configures a PN junction with the fourth semiconductor region, and

wherein each of a power-supply voltage for the source-follower transistor and a reverse bias voltage which is applied to between the fourth semiconductor region and the sixth semiconductor region is smaller than the reverse bias voltage which is applied to between the second semiconductor region and the third semiconductor region when the signal charge is transferred to the third semiconductor region.

20. The photoelectric conversion device according to claim 13 , wherein the signal charge transferred to the fourth semiconductor region is read out via the third semiconductor region.

21. The photoelectric conversion device according to claim 20 ,

wherein a gate electrode is arranged between the fourth semiconductor region and the third semiconductor region in planar view, and

wherein transfer of the signal charge from the fourth semiconductor region to the third semiconductor region is performed by a potential supplied to the gate electrode being changed.

22. The photoelectric conversion device according to claim 20 , wherein, when the signal charge transferred to the fourth semiconductor region is read out from the third semiconductor region, a reverse bias voltage which does not cause avalanche multiplication to occur with respect to the signal charge is applied to between the second semiconductor region and the third semiconductor region.

23. The photoelectric conversion device according to claim 13 ,

wherein the fourth semiconductor region is an overflow drain, and

wherein the second readout circuit includes an inverter which operates according to a potential of the overflow drain and a digital counter.

24. The photoelectric conversion device according to claim 1 , further comprising an AD conversion unit configured to perform analog-to-digital conversion on an analog signal read out by the second readout.

25. The photoelectric conversion device according to claim 24 , wherein addition processing for adding a first count value obtained by the counting circuit and a second count value obtained by the AD conversion unit configured to perform analog-to-digital conversion on an analog signal read out by the second readout is performed.

26. The photoelectric conversion device according to claim 25 , wherein, in the addition processing, a conversion gain of the first count value and a conversion gain of the second count value are same.

27. The photoelectric conversion device according to claim 26 , wherein, in the addition processing, a correction that is based on a difference in conversion gain is performed on at least one of the first count value and the second count value.

28. The photoelectric conversion device according to claim 27 , wherein the correction is a value obtained by dividing a source-follower-based output signal voltage by a source-follower output portion per one signal charge.

29. A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 1 ; and

a signal processing unit configured to process a signal output from the photoelectric conversion device.

30. A moving body comprising:

the photoelectric conversion device according to claim 1 ;

a distance information acquisition unit configured to acquire distance information indicating a distance from the moving body to a target object from a parallax image that is based on a signal output from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.

31. A photoelectric conversion device comprising:

a first semiconductor region having a first conductivity type in which carriers having a first polarity that is the same polarity as that of the signal charge are set as a majority carrier and accumulating the signal charge generated by photoelectric conversion;

a second semiconductor region of the first conductivity type;

a third semiconductor region of the first conductivity type;

a first readout path configured to transfer at least a portion of the signal charge from the first semiconductor region to the second semiconductor region and read out the transferred at least a portion of the signal charge using avalanche multiplication; and

a second readout path configured to transfer at least a portion of the signal charge from the first semiconductor region to the third semiconductor region and read out the transferred at least a portion of the signal charge without causing avalanche multiplication to occur with respect to the signal charge

wherein, in a case where an amount of the signal charge is smaller than a predetermined amount, all of the signal charge is read out from the first readout path.

32. The photoelectric conversion device according to claim 31 , wherein, in a case where the amount of the signal charge exceeds the predetermined amount, a first portion equivalent to the predetermined amount of the signal charge is accumulated in the first semiconductor region, the first portion is then read out from the first readout path, and a second portion different from the first portion of the signal charge is read out from the second readout path.

33. A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 31 ; and

a signal processing unit configured to process a signal output from the photoelectric conversion device.

34. A moving body comprising:

the photoelectric conversion device according to claim 31 ;

a distance information acquisition unit configured to acquire distance information indicating a distance from the moving body to a target object from a parallax image that is based on a signal output from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.