Sputtering target, granular film and perpendicular magnetic recording medium
Provided is a sputtering target containing 0.05 at % or more of Bi, and having a total content of metal oxides of from 10 vol % to 70 vol %, the balance containing at least Ru.
1. A sputtering target, the sputtering target containing: 0.05 at % or more of Bi; at least one element selected from an element group; and at least one oxide selected from an oxide group, the balance containing Ru, wherein:
a total content of the at least one oxide is from 10 vol % to 70 vol %,
the element group consists of: B, as a metalloid element; and Pt, Au, Ag, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V as metal elements,
the oxide group consists of oxides of Si and B as metalloid elements; and Bi, Co, Cr, Ti, and Ta as metal elements, and
metal elements accounting for 0.05 at % or more of the sputtering target are only Bi and at least one metal element selected from a group of Pt, Au, Ag, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, V, Co, Ti, and Ru.
2. The sputtering target according to claim 1 , wherein the balance further contains Co.
3. The sputtering target according to claim 1 , wherein the sputtering target contains a part or all of Bi as an oxide.
4. The sputtering target according to claim 1 , wherein the sputtering target contains 0.5 at % or more of Bi.
5. The sputtering target according to claim 1 , wherein the sputtering target contains from 0.5 at % to 30 at % of at least one selected from the group consisting of Pt, Au, Ag, B, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V.
6. A granular film, the granular film containing: 0.05 at % or more of Bi; at least one element selected from an element group; and at least one oxide selected from an oxide group, the balance containing Ru, wherein:
a total content of the at least one oxide is from 10 vol % to 70 vol %,
the element group consists of: B as a metalloid element; and Pt, Au, Ag, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V as metal elements,
the oxide group consists of oxides of Si and B as metalloid elements; and Bi, Co, Cr, Ti, and Ta as metal elements, and
metal elements accounting for 0.05 at % or more of the sputtering target are only Bi and at least one metal element selected from a group of Pt, Au, Ag, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, V, Co, Ti, and Ru.
7. The granular film according to claim 6 , wherein the balance further contains Co.
8. The granular film according to claim 6 , wherein the granular film contains a part or all of Bi as an oxide.
9. The granular film according to claim 6 , wherein the granular film contains 0.5 at % or more of Bi.
10. The granular film according to 7 , wherein the granular film contains from 0.5 at % to 30 at % of at least one selected from the group consisting of Pt, Au, Ag, B, Cu, Cr, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V.
11. A perpendicular magnetic recording medium comprising the granular film according to claim 6 .
12. A sputtering target, the sputtering target containing: 0.05 at % or more of Bi; and at least one oxide selected from an oxide group, the balance containing Ru, wherein:
a total content of the least one oxide is from 10 vol % to 70 vol %,
the oxide group consists of oxides of: Si and B as metalloid elements; and Bi, Co, Cr, Ti, and Ta as metal elements, and
metal elements accounting for 0.05 at % or more of the sputtering target are only Bi and at least one metal element selected from a group of Co, Cr, Ti, Ta, and Ru.
13. The sputtering target according to claim 12 , wherein the balance further contains Co.
14. The sputtering target according to claim 12 , wherein the sputtering target contains a part or all of Bi as an oxide.
15. The sputtering target according to claim 12 , wherein the sputtering target contains 0.5 at % or more of Bi.
16. A granular film, the granular film containing: 0.05 at % or more of Bi; and at least one oxide selected from an oxide group, the balance containing Ru, wherein:
a total content of the least one oxide is from 10 vol % to 70 vol %,
the oxide group consists of oxides of: Si and B as metalloid elements; and Bi, Co, Cr, Ti, and Ta as metal elements, and
metal elements accounting for 0.05 at % or more of the sputtering target are only Bi and at least one metal element selected from a group of Co, Cr, Ti, Ta and Ru.
17. The granular film according to claim 16 , wherein the balance further contains Co.
18. The granular film according to claim 16 , wherein the granular film contains a part or all of Bi as an oxide.
19. The granular film according to claim 16 , wherein the granular film contains 0.5 at % or more of Bi.
20. A perpendicular magnetic recording medium comprising the granular film according to claim 16 .