Sensor and display device
A sensor includes a plurality of electric lines including row lines and column lines, a photodiode in a pixel, a drain of a first transistor connected to the photodiode in the pixel, a drain of a second transistor connected in series with a source of the first transistor in the pixel, a source of the second transistor being connected to a column line among the plurality of electric lines, and both a gate of the first transistor and a gate of the second transistor being connected to a row line among the plurality of electric lines, wherein a channel material of the first transistor is different from a channel material of the second transistor.
1. A sensor comprising:
a plurality of electric lines comprising row lines and column lines;
a photodiode corresponding to a pixel of a pixel array;
a first transistor comprising a first gate, a first source, and a first drain, wherein the first drain is coupled to the photodiode, and wherein the first transistor is an oxide thin-film transistor (TFT); and
a second transistor comprising a second gate, a second source, and a second drain,
wherein the second transistor is a poly-silicon (Si) TFT,
wherein the poly-Si TFT comprises a twin-gated structure,
wherein the twin-gated structure comprises a split gate,
wherein the second drain is coupled in series with the first source,
wherein the second source is coupled to a first column line among the column lines,
wherein the first gate and the second gate are coupled to a same electric line among the electric lines, and
wherein a first channel material of the first transistor is different from a second channel material of the second transistor.
2. The sensor of claim 1 , wherein the first channel material is an oxide and the second channel material is a non-oxide.
3. The sensor of claim 1 , wherein the photodiode comprises a cathode, and wherein the oxide TFT is arranged between the cathode and the poly-Si TFT.
4. The sensor of claim 1 , wherein the oxide TFT comprises a tied dual-gated structure comprising top gates and bottom gates, and wherein the top gates and the bottom gates are coupled to a same electric line among the electric lines.
5. The sensor of claim 1 , wherein the oxide TFT comprises a dual-gated structure comprising:
a top gate coupled to a first line among the electric lines; and
a bottom gate coupled to a second line among the electric lines, and wherein the first line and the second line are different.
6. The sensor of claim 1 , wherein the first transistor is a bottom gate transistor and the second transistor is a top gate transistor.
7. The sensor of claim 1 , wherein the first transistor and the second transistor are top gate transistors, and wherein the second transistor is disposed in a first layer that is lower than a second layer in which the first transistor is disposed.
8. The sensor of claim 7 , further comprising a light shield layer located under the first transistor, wherein the light shield layer comprises a same material as a gate material of the second gate.
9. A sensor comprising:
a plurality of electric lines comprising row lines, column lines, and reset lines;
a photodiode corresponding to a pixel of a pixel array;
a readout transistor portion between the photodiode and a column line among the electric lines, wherein the readout transistor portion comprises a gate coupled to a first row line among the row lines;
a first transistor comprising a first gate, a first source, and a first drain, wherein the first drain is coupled to the photodiode; and
a second transistor comprising a second gate, a second source, and a second drain,
wherein the second drain is coupled in series with the first source,
wherein the first gate and the second gate are coupled to a first reset line of the reset lines, and
wherein a first channel material of the first transistor is different from a second channel material of the second transistor.
10. The sensor of claim 9 , wherein the first channel material is an oxide and the second channel material is a non-oxide.
11. The sensor of claim 10 , wherein the first transistor is an Oxide thin-film transistor (TFT) and the second transistor is a poly-silicon (Si) TFT.
12. The sensor of claim 11 , wherein the photodiode comprises a cathode, wherein the Oxide TFT is arranged between the cathode and the poly-Si TFT.
13. The sensor of claim 11 , wherein the poly-Si TFT comprises a twin-gated structure, and wherein the twin-gated structure comprises a split gate.
14. A display device comprising:
a sensor comprising:
a plurality of electric lines comprising row lines and column lines;
a photodiode corresponding to a pixel of a pixel array;
a first transistor comprising a first gate, a first source, and a first drain, wherein the first drain is coupled to the photodiode, and wherein the first transistor is an oxide thin-film transistor (TFT); and
a second transistor comprising a second gate, a second source, and a second drain,
wherein the second transistor is a poly-silicon (Si) TFT,
wherein the poly-Si TFT comprises a twin-gated structure,
wherein the twin-gated structure comprises a split gate,
wherein the second drain is coupled in series with the first source,
wherein the second source is coupled to a first column line among the column lines,
wherein the first gate and the second gate are coupled to a same electric line among the electric lines,
wherein a first channel material of the first transistor is an oxide, and
wherein a second channel material of the second transistor is a non-oxide.
15. The display device of claim 14 , wherein the photodiode comprises a cathode, and wherein the oxide TFT is arranged between the cathode and the poly-Si TFT.
16. The display device of claim 14 , wherein the oxide TFT comprises a tied dual-gated structure comprising top gates and bottom gates, and wherein the top gates and the bottom gates are coupled to a same electric line among the electric lines.
17. A display device comprising:
a sensor comprising:
a plurality of electric lines comprising row lines, column lines, and reset lines;
a photodiode corresponding to a pixel of a pixel array;
a readout transistor portion between the photodiode and a first column line among the column lines, wherein the readout transistor portion comprises a gate coupled to a first row line among the row lines;
a first transistor comprising a first gate, a first source, and a first drain, wherein the first drain is coupled to the photodiode; and
a second transistor comprising a second gate, a second source, and a second drain,
wherein the second drain is coupled in series with the first source,
wherein the first gate and the second gate are coupled to a first reset line of the reset lines, and
wherein a first channel material of the first transistor is different from a second channel material of the second transistor.
18. The display device of claim 17 , wherein the first channel material is an oxide and the second channel material is a non-oxide.
19. A display device, comprising:
a light emitting portion comprising a light emitting diode, a switching transistor comprising a first gate, and a first reset transistor; and
a photodiode portion comprising a readout transistor and a second reset transistor comprising a second gate,
wherein the second reset transistor is configured to reset data during a light emitting period of the light emitting diode, and wherein the first reset transistor is configured to reset data during a readout period of the readout transistor,
wherein the first gate and the second gate are configured to be coupled to a first scan line, and
wherein the first gate and the readout transistor are configured to be coupled to a second scan line.
20. The display device of claim 19 , wherein the switching transistor and the readout transistor are configured to be coupled to a same data voltage line, and wherein the first reset transistor and the second reset transistor are coupled to a same reference voltage line.