Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
A circuit tuning radio frequency (RF) power. The circuit includes a low to mid frequency (LF/HF) tuning circuit including a variable LF/MF capacitor coupled in series with an LF/MF inductor. The LF/MF tuning circuit is coupled between ground and a common node configured to receive an RF input. The circuit includes a high frequency (HF) tuning circuit coupled in parallel to the LF/MF tuning circuit between ground and the common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor. Cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or variable HF capacitor.
1. An apparatus for tuning radio frequency (RF) power, comprising:
a radio frequency (RF) dual source power generator including a low frequency (LF) to mid frequency (MF) power generator providing low frequency to mid frequency (LF/MF) power at a low to mid frequency, and a high frequency (HF) power generator providing HF power at a high frequency;
a split input RF (SIRF) distribution box configured for receiving the LF/MF power and for receiving the HF power, the SIRF distribution box further configured for combining and distributing at least one of the LF/MF power and the HF power as one or more split RF inputs to corresponding modular remote controlled calibration (MRCC) circuits; and
one or more MRCC circuits for one or more processing stations, wherein each of the one or more MRCC circuits includes an LF/MF tuning circuit coupled in parallel to an HF tuning circuit between ground and a corresponding common node configured to provide a corresponding split RF input,
wherein the LF/MF tuning circuit includes a variable LF/MF capacitor coupled in series with an LF/MF inductor, the LF/MF tuning circuit coupled between the ground and the corresponding common node, and
wherein the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit coupled between the ground and the corresponding common node,
wherein the corresponding common node is configured to provide a corresponding RF output to a corresponding processing station after tuning,
wherein cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or the variable HF capacitor.
2. The apparatus of claim 1 , wherein when the corresponding split RF input has a low to mid frequency component, the HF inductor presents a high impedance to the corresponding split RF input effectively isolating the HF tuning circuit from the LF/MF tuning circuit when adjusting the variable LF/MF capacitor.
3. The apparatus of claim 1 , wherein when the corresponding split RF input has a high frequency component, the LF/MF inductor presents a high impedance to the corresponding split RF input effectively isolating the LF/MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor.
4. The apparatus of claim 1 , wherein the corresponding RF output is provided to a corresponding pedestal of the corresponding processing station.
5. The apparatus of claim 1 , wherein the corresponding RF output is provided to a corresponding showerhead of the corresponding processing station.
6. The apparatus of claim 1 , further comprising:
a corresponding LF/MF actuator coupled to the variable LF/MF capacitor of the LF/MF tuning circuit and configured for adjusting the variable LF/MF capacitor;
a corresponding LF/MF absolute encoder configured for determining a value of the variable LF/MF capacitor;
a corresponding HF actuator coupled to the variable HF capacitor of the HF tuning circuit and configured for adjusting the variable HF capacitor; and
a corresponding HF absolute encoder configured for determining a value of the variable HF capacitor.
7. The apparatus of claim 1 , wherein RF power delivered to each of the one or more processing stations is of a similar value.
8. An assembly for use in a process chamber for depositing a film on a wafer, comprising:
a radio frequency (RF) dual source power generator including a low frequency (LF) to mid frequency (MF) power generator providing low frequency to mid frequency (LF/MF) power at a low to mid frequency, and a high frequency (HF) power generator providing HF power at a high frequency;
a split input RF (SIRF) distribution box configured for receiving the LF/MF power and for receiving the HF power, the SIRF distribution box further configured for combining and distributing at least one of the LF/MF power and the HF power as a first split RF input, a second split RF input, a third split RF input, and a fourth split RF input to corresponding modular remote controlled calibration (MRCC) circuits;
a first MRCC circuit for a first processing station;
a second MRCC circuit for a second processing station;
a third MRCC circuit for a third processing station; and
a fourth MRCC circuit for a fourth processing station,
wherein each MRCC circuit includes an LF/MF tuning circuit coupled in parallel to an HF tuning circuit between ground and a corresponding common node configured to receive a corresponding split RF input,
wherein the LF/MF tuning circuit includes a variable LF/MF capacitor coupled in series with an LF/MF inductor, the LF/MF tuning circuit coupled between the ground and the corresponding common node,
wherein the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit coupled between the ground and the corresponding common node,
wherein the corresponding common node is configured to provide a corresponding RF output to a corresponding processing station after tuning,
wherein cross parallel isolation occurs between the LF/MF inductor of the LF/MF tuning circuit and the HF inductor of the HF tuning circuit when adjusting the variable LF/MF capacitor or the variable HF capacitor.
9. The assembly of claim 8 , wherein when the corresponding split RF input has a low to mid frequency component, the HF inductor presents a high impedance to the corresponding split RF input effectively isolating the HF tuning circuit from the LF/MF tuning circuit when adjusting the variable LF/MF capacitor.
10. The assembly of claim 8 , wherein when the corresponding split RF input has a high frequency component, the LF/MF inductor presents a high impedance to the corresponding split RF input effectively isolating the LF/MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor.
11. The assembly of claim 8 , wherein the corresponding RF output is provided to a corresponding pedestal of the corresponding processing station.
12. The assembly of claim 8 , wherein the corresponding RF output is provided to a corresponding showerhead of the corresponding processing station.
13. The circuit of claim 8 , further comprising:
in the each MRCC circuit, a corresponding LF/MF actuator coupled to the variable LF/MF capacitor of the LF/MF tuning circuit and configured for adjusting the variable LF/MF capacitor;
in the each MRCC circuit, a corresponding LF/MF absolute encoder configured for determining a value of the variable LF/MF capacitor;
in the each MRCC circuit, a corresponding HF actuator coupled to the variable HF capacitor of the HF tuning circuit and configured for adjusting the variable HF capacitor; and
in the each MRCC circuit, a corresponding HF absolute encoder configured for determining a value of the variable HF capacitor.