Etching method and apparatus
A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.
1. An etching method comprising:
providing a substrate having a region consisting only of Si and another material; and
selectively etching the region consisting only of Si over said another material by supplying a germanium-containing gas as an etching gas to the substrate,
wherein the region consisting only of Si is selectively etched by supplying a compound gas of germanium only or by supplying the compound gas of germanium and an inert gas only,
wherein the region consisting only of Si is a Si film,
said another material is a SiGe film or a Ge film, and
the substrate has a laminated structure in which the Si film and the SiGe film are laminated alternately or the Si film and the Ge film are laminated alternately.
2. The etching method of claim 1 , wherein the SiGe film, the Ge film, and the Si film are formed by an epitaxial method.
3. The etching method of claim 1 , wherein, in said etching, a pressure is within a range of 1.33 Pa to 39990 Pa.
4. The etching method of claim 1 , further comprising, before said etching:
removing a natural oxide film on a surface of the substrate.
5. The etching method of claim 1 , further comprising:
removing residues remaining after said etching.
6. The etching method of claim 1 , wherein said etching is non-plasma etching in which the etching gas is supplied to the substrate without being converted into plasma.
7. The etching method of claim 1 , wherein the compound gas of germanium is a compound gas of germanium and hydrogen or a compound gas of germanium and halogen.
8. The etching method of claim 7 , wherein the compound gas of germanium and hydrogen or the compound gas of germanium and halogen is at least one of GeF 4 gas, GeF 2 Cl 2 gas, GeCl 4 gas, and GeH 4 gas.
9. The etching method of claim 1 , wherein, in said etching, a temperature of the substrate is higher than or equal to −20° C. and lower than or equal to 300° C.
10. The etching method of claim 9 , wherein, in said etching, the temperature of the substrate is lower than or equal to 150° C.
11. An etching apparatus comprising:
a chamber configured to accommodate a substrate having a region consisting only of Si and another material;
a substrate support on which the substrate is supported in the chamber,
a gas supply unit configured to supply a germanium-containing gas as an etching gas into the chamber;
a gas exhaust unit configured to exhaust the chamber;
a temperature control unit configured to adjust a temperature of the substrate on the substrate support; and
a control unit configured to control the gas supply unit, the gas exhaust unit, and the temperature control unit such that the region consisting only of Si is selectively etched over said another material,
wherein the region consisting only of Si is selectively etched by supplying a compound gas of germanium only or by supplying the compound gas of germanium and an inert gas only,
wherein the region consisting only of Si is a Si film,
said another material is a SiGe film or a Ge film, and
the substrate has a laminated structure in which the Si film and the SiGe film are laminated alternately or the Si film and the Ge film are laminated alternately.
12. The etching apparatus of claim 11 , wherein the compound gas of germanium is a compound gas of germanium and hydrogen or a compound gas of germanium and halogen.
13. The etching apparatus of claim 12 , wherein the compound gas of germanium and hydrogen or the compound gas of germanium and halogen is at least one of GeF 4 gas, GeF 2 Cl 2 gas, GeCl 4 gas, and GeH 4 gas.