Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture
Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture are disclosed herein. In one embodiment, a semiconductor device package includes a plurality of package contacts and a semiconductor die having a plurality of first die bond pads, a plurality of second die bond pads, and a plurality of duplicate die bond pads having the same pin assignments as the first die bond pads. The semiconductor die further includes an integrated circuit operably coupled to the package contacts via the plurality of first die bond pads and either the second die bond pads or the duplicate die bond pads, but not both. The integrated circuit is configured to be programmed into one of (1) a first pad state in which the first and second die bond pads are enabled for use with the package contacts and (2) a second pad state in which the first and duplicate die bond pads are enabled for use with the package contacts.
1. A semiconductor device, comprising:
a plurality of driver circuits, each of the plurality of driver circuits corresponding to one of a plurality of driver circuit groups, each of the plurality of driver circuit groups having dedicated pin assignments; and
an integrated circuit operably coupled to the plurality of driver circuits via one of a plurality of subsets of the plurality of driver circuit groups,
wherein the integrated circuit is configured to be programmed into one of a plurality of states, each of the plurality of states corresponding to a different one of the plurality of subsets being enabled.
2. The semiconductor device of claim 1 , wherein the integrated circuit is further configured to:
disable a driver circuit group that is not in the one of the plurality of subsets enabled.
3. The semiconductor device of claim 1 , wherein the plurality of states comprises more than two states.
4. The semiconductor device of claim 1 , wherein the plurality of states comprises three states, wherein the plurality of driver circuit groups comprises three driver circuit groups, and wherein a first state of the three states corresponds to a first one and a third one of the three driver circuit groups being enabled, wherein a second state of the three states corresponds to a second one and the third one of the three driver circuit groups being enabled, and wherein a third state of the three states corresponds to only the first one of the three driver circuit groups being enabled.
5. The semiconductor device of claim 1 wherein the integrated circuit includes non-volatile memory, and wherein the non-volatile memory is configured to store a value indicative of the one of the plurality of states into which the integrated circuit is programmed.
6. The semiconductor device of claim 1 wherein the integrated circuit includes a memory component and a plurality of data lines for accessing the memory component, and wherein the dedicated pin assignments of each of the plurality of driver circuit groups is associated with at least one of the data lines.
7. The semiconductor device of claim 1 wherein at least two of the plurality of driver circuit groups have the same dedicated pin assignments.
8. A semiconductor device assembly comprising the semiconductor device of claim 1 , and further comprising:
a package substrate on which the semiconductor device is disposed, the package substrate including:
a plurality of intermediate bond pads wirebonded to corresponding bond pads of the semiconductor device, the corresponding bond pads of the semiconductor device corresponding to the one of the plurality of subsets enabled for use,
a plurality of package contacts formed beneath the semiconductor device, and
a plurality of conductive traces electrically coupling the intermediate bond pads to the package contacts.
9. A semiconductor device assembly comprising the semiconductor device of claim 1 , and further comprising:
a casing at least partially encapsulating the semiconductor device, and
package contacts including metal leads extending through the package casing and wirebonded to corresponding bond pads of the semiconductor device, the corresponding bond pads of the semiconductor device corresponding to the one of the plurality of subsets enabled for use.
10. A semiconductor device comprising:
a plurality of driver circuit groups, wherein at least two of the plurality of driver circuit groups share a same set of pin assignments,
wherein the semiconductor device is configured to selectively enable one of the at least two of the plurality of driver circuit groups and to selectively disable another one of the at least two of the plurality of driver circuit groups.
11. The semiconductor device of claim 10 , further comprising an integrated circuit including non-volatile memory, and wherein the non-volatile memory is configured to store a value indicative of the one of the at least two of the plurality of driver circuit groups which is enabled.
12. The semiconductor device of claim 10 , further comprising an integrated circuit including a memory component and a plurality of data lines for accessing the memory component, and wherein the same set of pin assignments of the plurality of driver circuit groups is associated with at least one of the data lines.
13. A method of manufacturing a semiconductor device package, comprising:
selectively connecting package contacts of the semiconductor device package to a semiconductor die forming a part of the semiconductor device package, wherein the semiconductor die includes a plurality of driver circuit groups each having dedicated pin assignments, wherein selectively connecting the package contacts includes—
connecting individual package contacts to one of a plurality of subsets of the plurality of driver circuit groups, and
programming the semiconductor die into one of a plurality of states, each of the plurality of states corresponding to a different one of the plurality of subsets being enabled.
14. The method of claim 13 , wherein each of the plurality of states corresponds to one or more driver circuit groups not enabled for use being disabled.
15. The method of claim 13 , wherein the plurality of states comprises more than two states.
16. The method of claim 13 , wherein the plurality of states comprises three states, wherein the plurality of driver circuit groups comprises three driver circuit groups, and wherein a first state of the three states corresponds to a first one and a third one of the three driver circuit groups being enabled, wherein a second state of the three states corresponds to a second one and the third one of the three driver circuit groups being enabled, and wherein a third state of the three states corresponds to only the first one of the three driver circuit groups being enabled.
17. The method of claim 13 wherein the semiconductor die includes non-volatile memory, and further comprising storing a value indicative of the one of the plurality of states into which the semiconductor die is programmed in the non-volatile memory.
18. The method of claim 13 wherein at least two of the plurality of driver circuit groups have the same dedicated pin assignments.