Stacked image sensor device and method of forming same

1. A semiconductor device comprising:

a first logic die comprising a first through via;

an image sensor die hybrid bonded to the first logic die, a front side of the first logic die facing a front side of the image sensor die;

a second logic die bonded to the first logic die, a width of the second logic die being less than a width of the first logic die, a front side of the second logic die facing a backside of the first logic die, the second logic die comprising a first conductive pad electrically coupled to the first through via;

an encapsulant extending along sidewalls of the second logic die, a width of the encapsulant being equal to the width of the first logic die, a first surface of the encapsulant being spaced apart from the first logic die by a greater distance than a backside of the second logic die, the first surface of the encapsulant and the backside of the second logic die facing away from the first logic die;

a first conductive column and a second conductive column embedded in the encapsulant and bonded to the first logic die, the second logic die being interposed between the first conductive column and the second conductive column, wherein a height of the first conductive column is greater than a height of the second logic die;

a redistribution structure on the first surface of the encapsulant, the second logic die being interposed between the first logic die and the redistribution structure, a portion of the encapsulant being interposed between the backside of the second logic die and the redistribution structure, the backside of the second logic die facing the redistribution structure;

a dam structure attached to a backside of the image sensor die; and

a cover attached to the dam structure.

2. The semiconductor device of claim 1 , wherein the second logic die is hybrid bonded to the first logic die.

3. The semiconductor device of claim 1 , wherein the second logic die is bonded to the first logic die using a plurality of first connectors.

4. The semiconductor device of claim 1 , further comprising a memory die bonded to the first logic die, a front side of the memory die facing the backside of the first logic die.

5. The semiconductor device of claim 4 , wherein a memory die is hybrid bonded to the first logic die.

6. The semiconductor device of claim 4 , wherein a memory die is bonded to the first logic die using a plurality of second connectors.

7. The semiconductor device of claim 1 , further comprising a memory die hybrid bonded to the second logic die, a front side of the memory die facing a backside of the second logic die.

8. A semiconductor device comprising:

a first logic die, a front side of the first logic die comprising a first insulating layer and a first conductive pad, a backside of the first logic die comprising a second insulating layer and a second conductive pad;

an image sensor die bonded to the first logic die, a front side of the image sensor die comprising a third insulating layer and a third conductive pad, the third conductive pad being in physical contact with the first conductive pad, the third insulating layer being in physical contact with the first insulating layer;

a second logic die bonded to the first logic die, a width of the second logic die being less than a width of the first logic die, a front side of the second logic die comprising a fourth insulating layer and a fourth conductive pad, a backside of the second logic die comprising a fifth insulating layer and a fifth conductive pad, the fourth insulating layer facing the second insulating layer;

a memory die bonded to the second logic die, a width of the memory die being less than the width of the first logic die, a front side of the memory die comprising a sixth insulating layer and a sixth conductive pad, the sixth conductive pad being in physical contact with the fifth conductive pad, the sixth insulating layer being in physical contact with the fifth insulating layer; and

an encapsulant extending along sidewalls of the second logic die and along sidewalls of the memory die, a portion of the encapsulant extending along and being in physical contact with a backside of the memory die, the backside of the memory die being opposite to the front side of the memory die, a combined height of the second logic die and the memory die being less than a height of the encapsulant.

9. The semiconductor device of claim 8 , wherein the second insulating layer is in physical contact with the fourth insulating layer, and wherein the second conductive pad is in physical contact with the fourth conductive pad.

10. The semiconductor device of claim 8 , further comprising a conductive connector, the conductive connector electrically and mechanically coupling the second conductive pad to the fourth conductive pad.

11. The semiconductor device of claim 8 , further comprising a through via extending though the encapsulant adjacent the second logic die.

12. The semiconductor device of claim 11 , further comprising a redistribution structure electrically coupled to the through via, the second logic die being interposed between the redistribution structure and the first logic die.

13. The semiconductor device of claim 12 , wherein a portion of the encapsulant is interposed between the second logic die and the redistribution structure.

14. The semiconductor device of claim 8 , wherein the second logic die comprises a through via, the through via being in physical contact with the fifth conductive pad.