Gate-all-around integrated circuit structures having fin stack isolation
Gate-all-around integrated circuit structures having fin stack isolation, and methods of fabricating gate-all-around integrated circuit structures having fin stack isolation, are described. For example, an integrated circuit structure includes a sub-fin structure on a substrate, the sub-fin structure having a top and sidewalls. An isolation structure is on the top and along the sidewalls of the sub-fin structure. The isolation structure includes a first dielectric material surrounding regions of a second dielectric material. A vertical arrangement of horizontal nanowires is on a portion of the isolation structure on the top surface of the sub-fin structure.
1. An integrated circuit structure, comprising:
a sub-fin structure on a substrate, the sub-fin structure having a top and sidewalls;
an isolation structure on the top and along the sidewalls of the sub-fin structure, wherein the isolation structure comprises a first dielectric material surrounding regions of a second dielectric material, the first dielectric material completely vertically overlapping the second dielectric material, and the first dielectric material in direct contact with the sidewalls and the top of the sub-fin structure; and
a vertical arrangement of horizontal nanowires on a portion of the isolation structure on the top surface of the sub-fin structure.
2. The integrated circuit structure of claim 1 , wherein a portion of the isolation structure along the sidewalls of the sub-fin structure has a top surface co-planar with a top surface of the portion of the isolation structure on the top surface of the sub-fin structure.
3. The integrated circuit structure of claim 1 , wherein a portion of the isolation structure along the sidewalls of the sub-fin structure has a top surface above a top surface of the portion of the isolation structure on the top surface of the sub-fin structure.
4. The integrated circuit structure of claim 1 , wherein a portion of the isolation structure along the sidewalls of the sub-fin structure has a top surface below a top surface of the portion of the isolation structure on the top surface of the sub-fin structure.
5. The integrated circuit structure of claim 1 , further comprising:
a gate stack surrounding a channel region of the vertical arrangement of horizontal nanowires.
6. The integrated circuit structure of claim 5 , wherein the gate stack comprises a high-k gate dielectric layer and a metal gate electrode.
7. The integrated circuit structure of claim 1 , further comprising:
a pair of non-discrete epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires.
8. The integrated circuit structure of claim 1 , further comprising:
a pair of discrete epitaxial source or drain structures at first and second ends of the vertical arrangement of horizontal nanowires.
9. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a sub-fin structure on a substrate, the sub-fin structure having a top and sidewalls;
an isolation structure on the top and along the sidewalls of the sub-fin structure, wherein the isolation structure comprises a first dielectric material surrounding regions of a second dielectric material, the first dielectric material completely vertically overlapping the second dielectric material, and the first dielectric material in direct contact with the sidewalls and the top of the sub-fin structure; and
a vertical arrangement of horizontal nanowires on a portion of the isolation structure on the top surface of the sub-fin structure.
10. The computing device of claim 9 , further comprising:
a memory coupled to the board.
11. The computing device of claim 9 , further comprising:
a communication chip coupled to the board.
12. The computing device of claim 9 , wherein the component is a packaged integrated circuit die.
13. The computing device of claim 9 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.