Dynamic generation of layout adaptive packaging

1. A method for processing an apparatus in a maskless lithography system, comprising:

obtaining coordinate data on a component and an aspect of an electrical connection to the component in a designed state;

placing the component within range of at least one scanning device associated with the lithography system;

scanning the component with the at least one scanning device to develop a second set of coordinate data for the component;

comparing the obtained coordinate data of the component to the second set of coordinate data for the component to determine an offset of the component scanned with the scanning device to the designed state;

altering the aspect of the electrical connection to the component based, at least in part, upon one of the offset data, visual images of the scanning of the component used to develop the second set of coordinate data for the component, and the second set of coordinate data for the component prior to the forming the electrical connection;

providing an electrical connection wiring location between the component and a fixed perimeter using the altered aspect of the electrical connection; and

forming an altered electrical connection on the electrical connection location between the component and the fixed perimeter, wherein the method is performed in-situ in the maskless lithography system.

2. The method according to claim 1 , wherein the component is placed upon a substrate, and wherein the substrate is placed upon an indexing table of the lithography system.

3. The method according to claim 1 , wherein the altering the aspect of the electrical connection is performed by computer analysis.

4. The method according to claim 1 , wherein the comparing the obtained coordinate data to the second set of coordinate data further comprises comparing the offset to a threshold.

5. The method according to claim 4 , further comprising:

when the offset is less than the threshold, setting the offset to zero.

6. The method according to claim 1 , further comprising:

comparing the obtained coordinate data to the second set of coordinate data further comprises comparing the offset to a threshold; and

when the comparing is greater than the threshold, generating a warning to a user that the threshold has been exceeded.

7. The method according to claim 1 , further comprising:

manufacturing the electrical connection based upon data of the aspect of the electrical connection that is altered.

8. The method according to claim 1 , wherein the altering the aspect of the electrical connection is based upon the offset data.

9. The method according to claim 1 , wherein the component is placed upon a substrate.

10. A method for processing an apparatus in a maskless microlithography system, comprising:

obtaining position data on a component and an aspect of an electrical connection to the component for a designed state;

placing the component on a stage of a microlithography system;

placing the stage within range of at least one scanning device of the microlithography system;

scanning the stage including the component with the at least one scanning device to develop a second set of coordinate data for the component and the electrical connection;

comparing the obtained coordinate data of the component to the second set of coordinate data for the component to determine an offset of the component scanned with the scanning device to the designed state;

altering the aspect of the electrical connection to the component based, at least in part, upon the offset data prior to forming the electrical connection;

providing an electrical connection wiring location between the component and a fixed perimeter using the altered aspect of the electrical connection; and

forming the altered electrical connection on the electrical connection location between the component and the fixed perimeter, wherein the method is performed in-situ in the maskless lithography system.

11. The method according to claim 10 , further comprising:

manufacturing the electrical connection based upon data of the aspect of the electrical connection that is altered.

12. The method according to claim 10 , wherein the component is placed upon a substrate.

13. The method according to claim 10 , wherein the altering of the aspect of the electrical connection is performed by computer analysis, or

wherein the comparing the obtained coordinate data to the second set of coordinate data further comprises comparing the offset to a threshold.

14. The method according to claim 10 , wherein the microlithography system is a maskless system, or

wherein the comparing the obtained coordinate data to the second set of coordinate data further comprises comparing the offset to a threshold.

15. The method according to claim 10 , wherein the aspect of the electrical connection is performed by computer analysis.

16. The method according to claim 10 , wherein the microlithography system is a maskless system.

17. A method for processing a substrate in a maskless microlithography system, comprising:

obtaining coordinate data in a designed state pertaining to at least one component and an aspect of at least one wiring connection to the at least one component, wherein the component is at least one of on and in the substrate;

placing the substrate on a stage within the microlithography system;

moving the substrate on the stage to a scanning device of the lithography system;

scanning the substrate including the component with the scanning device to develop a second set of coordinate data for the component;

comparing the obtained coordinate data of the component of the stage to the second set of coordinate data for the component to determine an offset of the component scanned with the scanning device to the designed state;

altering the aspect of the at least one wiring connection to the component based, at least in part, upon one of the offset data, visual images of the scanning of the component used to develop the second set of coordinate data for the component and the second set of coordinate data for the component prior to forming the electrical connection;

providing an electrical connection wiring location between the component and a fixed perimeter using the altered aspect of the electrical connection; and

forming the altered electrical connection on the electrical connection location between the component and the fixed perimeter, wherein the method is performed in-situ in the maskless lithography system.

18. The method according to claim 17 , further comprising:

manufacturing the at least one wiring connection pattern based upon data of the aspect of the at least one wiring connection pattern.

19. The method according to claim 17 , wherein the altering the aspect of the at least one wiring connection is performed by computer analysis, or

wherein the comparing the obtained coordinate data to the second set of coordinate data further comprises comparing the offset to a threshold, or

wherein the component is a semiconductor component.

20. The method according to claim 17 , wherein the altering the aspect of the at least one wiring connection is based upon the offset data.