IP Library › Granted Patent US 11,600,467
Granted Patent B2
US 11,600,467 · App. 17/144,185 · Granted Mar 7, 2023

Power supply devices for plasma systems and method of use

Inventors: Christian Bock (Freiburg, DE); Christian Thome (Freiburg, DE)
Assignee: TRUMPF Huettinger GmbH + Co. KG
H01J37/32183H01J37/32137
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,600,467
App. No.
17/144,185
Granted
Mar 7, 2023
Kind
B2
Abstract

Power supply devices for generating at least one electric high-frequency power signal for a plasma having at least a first plasma state and a second plasma state are provided. The power supply devices are configured to determine a first variable that characterizes a power reflected by the plasma in the first plasma state, determine a second variable that characterizes a power reflected by the plasma in the second plasma state, generate a third variable based on the first variable and the second variable, and control at least one of a frequency or a power of the high-frequency power signal based on the third variable.

Claims (70)

1. A power supply device comprising:

at least one power supply component configured to generate at least one electric high-frequency power signal for a plasma having at least a first plasma state and a second plasma state; and

a controller configured to provide at least one control signal to the at least one power supply component,

wherein the controller is configured to:

determine a first variable that characterizes a first power reflected by the plasma in the first plasma state,

determine a second variable that characterizes a second power reflected by the plasma in the second plasma state,

generate a third variable based on the first variable and the second variable, and

control at least one of a frequency or a power of the high-frequency power signal based on the third variable.

2. The power supply device of claim 1 , wherein the first variable characterizes a temporal mean value of an instantaneous value of the first power reflected by the plasma over at least one time period of the high-frequency power signal and a phase angle between forward and reflected high-frequency waves during the first plasma state.

3. The power supply device of claim 1 , wherein the second variable characterizes a temporal mean value of an instantaneous value of the second power reflected by the plasma over at least one time period of the high-frequency power signal and a phase angle between forward and reflected high-frequency waves during the second plasma state.

4. The power supply device of claim 1 , wherein the controller is configured to generate the third variable as a weighted mean value of the first variable and the second variable.

5. The power supply device of claim 4 , wherein the controller is configured to:

determine a first weighting factor assigned to the first variable based on at least one first time period of the first plasma state, and

determine a second weighting factor assigned to the second variable based on at least one second time period of the second plasma state.

6. The power supply device of claim 5 , wherein the controller is configured to:

select the first weighting factor and the second weighting factor such that a ratio of the first weighting factor and the second weighting factor corresponds at least approximately to a ratio of the first time period and the second time period.

7. The power supply device of claim 1 , wherein the controller is configured to control the third variable based on at least one of:

an operating variable of the at least one power supply component, the operating variable comprising at least one of a temperature or an operating time of the at least one power supply component, or

a characteristic of the at least one power supply component, the characteristic comprising at least one of a current capacity or a voltage capacity of the at least one power supply component.

8. The power supply device of claim 1 ,

wherein the at least one power supply component comprises at least one of a controllable oscillator, a first controllable amplifier, or a second controllable amplifier, and

wherein the controller is configured to control an operation of the at least one of the controllable oscillator, the first controllable amplifier, or the second controllable amplifier based on the third variable.

9. The power supply device of claim 1 , further comprising at least one display device, and wherein the power supply device is configured to output at least one variable via the display device, the at least one variable comprising at least one of:

an instantaneous value of the first power reflected by the plasma in the first plasma state or an instantaneous value of the second power reflected by the plasma in the second plasma state,

a variable derived from the instantaneous value of the first power reflected by the plasma or the instantaneous value of the second power reflected by the plasma,

the third variable,

a reflection factor of the plasma, or

a variable derived from the reflection factor of the plasma.

10. The power supply device of claim 1 , wherein the controller is configured to regulate the at least one of the frequency or the power of the high-frequency power signal based on the third variable and a fourth variable, and wherein the fourth variable characterizes an absolute power reflected by the plasma.

11. The power supply device of claim 1 , wherein the first variable characterizes a temporal mean value of an instantaneous value of the first power reflected by the plasma over at least one time period of the high-frequency power signal and a phase angle between forward and reflected high-frequency waves during the first plasma state,

wherein the second variable characterizes a temporal mean value of an instantaneous value of the second power reflected by the plasma over at least one time period of the high-frequency power signal and a phase angle between forward and reflected high-frequency waves during the second plasma state,

wherein the at least one power supply component comprises at least one of a controllable oscillator, a first controllable amplifier, or a second controllable amplifier, and

wherein the controller is configured to control an operation of the at least one of the controllable oscillator, the first controllable amplifier, or the second controllable amplifier based on the third variable.

12. The power supply device of claim 1 , further comprising:

at least one further power supply component configured to generate at least one pulsed direct current or voltage signal for the plasma in additional to the high-frequency power signal, the first plasma state and the second plasma state being determined at least partially based on the pulsed direct current or voltage signal.

13. The power supply device of claim 1 , wherein the first variable comprises at least one of a first impedance of the plasma during the first plasma state or a first reflection factor of the plasma during the first plasma state, and

wherein the second variable comprises at least one of a second impedance of the plasma during the second plasma state or a second reflection factor of the plasma during the second plasma state.

14. A method of operating a power supply device for generating at least one electric high-frequency power signal for a plasma having at least a first plasma state and a second plasma state, the method comprising:

determining a first variable that characterizes a first power reflected by the plasma in the first plasma state;

determining a second variable that characterizes a second power reflected by the plasma in the second plasma state;

generating a third variable based on the first variable and the second variable; and

controlling at least one of a frequency or a power of the high-frequency power signal based on the third variable.

15. The method of claim 14 , wherein the first variable characterizes a temporal mean value of an instantaneous value of the first power reflected by the plasma over at least one time period of the high-frequency power signal during the first plasma state.

16. The method of claim 14 , wherein the second variable characterizes a temporal mean value of an instantaneous value of the second power reflected by the plasma over at least one time period of the high-frequency power signal during the second plasma state.

17. The method of claim 14 , wherein generating the third variable based on the first variable and the second variable comprises determining the third variable as a weighted mean value of the first variable and the second variable.

18. The method of claim 17 , wherein determining the third variable as the weighted mean value of the first variable and the second variable comprises:

determining a first weighting factor assigned to the first variable based on at least one first time period of the first plasma state, and/or

determining a second weighting factor assigned to the second variable depending on at least one second time period of the second plasma state,

wherein the first weighting factor and the second weighting factor are determined such that a ratio of the first weighting factor and the second weighting factor corresponds at least approximately to a ratio of the first time period and the second time period.

19. The method of claim 14 , further comprising controlling the third variable based on at least one of:

an operating variable of at least one power supply component of the power supply device, the operating variable comprising at least one of a temperature or an operating time of at least one power supply component of the power supply device, or

a characteristic of the at least one power supply of the power supply device, the characteristic comprising at least one of a current capacity or a voltage capacity of the at least one power supply component of the power supply device.

20. The method of claim 14 ,

wherein the power supply device comprises at least one of a controllable oscillator, a first controllable amplifier, or a second controllable amplifier, and

wherein the method further comprises:

controlling an operation of the at least one of the controllable oscillator, the first controllable amplifier, or the second controllable amplifier based on the third variable.

21. The method of claim 14 , wherein the power supply device comprises at least one display device, and wherein the method further comprises outputting via the display device at least one of:

an instantaneous value of the first power reflected by the plasma in the first plasma state or an instantaneous value of the second power reflected by the plasma in the second plasma state,

a variable derived from the instantaneous value of the first power reflected by the plasma or the instantaneous value of the second power reflected by the plasma,

the third variable,

a reflection factor of the plasma, or

a variable derived from the reflection factor of the plasma.

22. The method of claim 14 , wherein controlling the at least one of the frequency or the power of the high-frequency power signal based on the third variable comprises regulating the at least one of the frequency or the power of the high-frequency power signal based on the third variable and a fourth variable, wherein the fourth variable characterizes an absolute power reflected on the plasma.

23. A method for regulating an impedance matching device coupled between a power supply device and a plasma chamber, the method comprising:

operating the power supply device to generate at least one electric high-frequency power signal for a plasma generated in the plasma chamber, the plasma having at least a first plasma state and a second plasma state, the operating comprising:

determining a first variable that characterizes a first power reflected by the plasma in the first plasma state,

determining a second variable that characterizes a second power reflected by the plasma in the second plasma state,

generating a third variable based on the first variable and the second variable, and

controlling at least one of a frequency or a power of the high-frequency power signal based on the third variable; and

regulating the impedance matching device at least based on the third variable.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2023
From: BOCK, CHRISTIAN; THOME, CHRISTIAN
To: TRUMPF HUETTINGER GMBH + CO. KG
Reel/Frame 062505/0142 →
Priority Claims (1)
DE 102018116637.0 · Jul 10, 2018 · national
Continuity (2)
Continuation PCTEP2019068111 · Jul 5, 2019
Related Publication 20210134563A1 · May 6, 2021
Cited By (1)
US 12,719,020