Semiconductor device and method for manufacturing the semiconductor device
A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.
1. A method for manufacturing a semiconductor device,
wherein a metal oxide comprising indium and zinc is formed over a substrate by the steps of:
introducing a first precursor into a chamber in which the substrate is provided;
performing a first evacuation after the introduction of the first precursor;
introducing a first oxidizer after the first evacuation;
performing a second evacuation after the introduction of the first oxidizer;
introducing a second precursor after the second evacuation; and
introducing a second oxidizer after the introduction of the second precursor.
2. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first precursor comprises indium.
3. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second precursor comprises at least one of zinc and gallium.
4. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the metal oxide comprises an element M (M is aluminum, gallium, yttrium, or tin).
5. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the metal oxide comprises a crystal structure in which a c-axis of a crystal is aligned perpendicularly to a deposition surface.
6. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first oxidizer comprises at least one selected from ozone, oxygen, and water, and
wherein the second oxidizer comprises at least one selected from ozone, oxygen, and water.
7. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second oxidizer comprises the same material as the first oxidizer.
8. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the substrate is heated to higher than or equal to 200° C. and lower than or equal to 400° C. during deposition of the metal oxide.
9. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the second oxidizer is a material different from the first oxidizer.
10. The method for manufacturing a semiconductor device, according to claim 1 ,
wherein the first precursor comprises chlorine.
11. A method for manufacturing a semiconductor device,
wherein a metal oxide comprising indium and zinc is formed over a substrate by the steps of:
introducing a first precursor into a chamber in which the substrate is provided;
performing a first evacuation after the introduction of the first precursor;
introducing a first oxidizer after the first evacuation;
performing a second evacuation after the introduction of the first oxidizer;
introducing a second precursor after the second evacuation;
introducing a second oxidizer after the introduction of the second precursor;
introducing a third precursor after the introduction of the second oxidizer; and
introducing a third oxidizer after the introduction of the third precursor.
12. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the first precursor comprises indium.
13. The method for manufacturing a semiconductor device, according to claim 11 , wherein the second precursor comprises one of zinc and gallium.
14. The method for manufacturing a semiconductor device, according to claim 13 ,
wherein the third precursor comprises the other of zinc and gallium.
15. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the metal oxide comprises an element M (M is aluminum, gallium, yttrium, or tin).
16. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the metal oxide comprises a crystal structure in which a c-axis of a crystal is aligned perpendicularly to a deposition surface.
17. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the first oxidizer comprises at least one selected from ozone, oxygen, and water, and
wherein the second oxidizer comprises at least one selected from ozone, oxygen, and water.
18. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the second oxidizer comprises the same material as the first oxidizer.
19. The method for manufacturing a semiconductor device, according to claim 11 ,
wherein the third oxidizer comprises at least one selected from ozone, oxygen, and water.