Method of preparing a sample for physical analysis
A method of preparing a sample for physical analysis is disclosed, which is characterized by forming a low-temperature atomic layer deposition (ALD) metal nitride film or a low-temperature atomic layer deposition (ALD) metal oxynitride film by plasma-less enhanced atomic layer deposition (PLALD) at a temperature below 40° C. on a specimen to generate a sample for physical analysis to prevent the surface of sample for physical analysis from being damaged during physical analysis.
1. A method of preparing a sample for physical analysis,
comprising the steps of:
providing a specimen; and
forming a low-temperature atomic layer deposition (ALD) film on the specimen to generate a sample for physical analysis;
wherein the low-temperature atomic layer deposition (ALD) film is formed by plasma-less enhanced atomic layer deposition (PLALD) at a temperature below 40° C.;
wherein the low-temperature atomic layer deposition (ALD) film is a metal nitride film or a metal oxynitride film.
2. The method of preparing a sample for physical analysis as claimed in claim 1 , wherein the metal nitride film is an aluminum nitride (ALN) film, a molybdenum nitride (MoN) film, a titanium nitride film (TiN) or a tantalum nitride (TaN) film.
3. The method of preparing a sample for physical analysis as claimed in claim 2 , further comprising a step of slimming treatment for the low-temperature atomic layer deposition (ALD) film formed on the sample for physical analysis.
4. The method of preparing a sample for physical analysis as claimed in claim 3 , wherein the step of slimming treatment is proceed by a focus ion beam (FIB) system.
5. The method of preparing a sample for physical analysis as claimed in claim 1 , wherein the metal oxynitride film is a tantalum oxynitride (TaON) film.
6. The method of preparing a sample for physical analysis as claimed in claim 5 , further comprising a step of slimming treatment for the low-temperature atomic layer deposition (ALD) film formed on the sample for physical analysis.
7. The method of preparing a sample for physical analysis as claimed in claim 6 , wherein the step of slimming treatment is proceed by a focus ion beam (FIB) system.
8. The method of preparing a sample for physical analysis as claimed in claim 1 , further comprising a step of slimming treatment for the low-temperature atomic layer deposition (ALD) film formed on the sample for physical analysis.
9. The method of preparing a sample for physical analysis as claimed in claim 8 , wherein the step of slimming treatment is proceed by a focus ion beam (FIB) system.