IP Library › Granted Patent US 11,605,607
Granted Patent B2
US 11,605,607 · App. 17/206,442 · Granted Mar 14, 2023

Semiconductor device and methods of manufacture

Inventors: Hung-Chun Cho (Hsinchu, TW); Hung-Jui Kuo (Hsinchu, TW); Yu-Hsiang Hu (Hsinchu, TW); Sih-Hao Liao (New Taipei, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H01L24/20H01L23/295H01L23/296H01L24/19H01L24/82H01L24/96H01L25/0652H01L25/18H01L25/50H01L21/561H01L24/73H01L2224/19H01L2224/21H01L2224/2101H01L2224/24105H01L2224/24146H01L2224/73204H01L2224/73259H01L2224/73267H01L2224/82051
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Quick Facts
Patent No.
US 11,605,607
App. No.
17/206,442
Granted
Mar 14, 2023
Kind
B2
Abstract

In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

Claims (37)

1. A method, comprising:

forming a conductive feature adjacent to a substrate;

forming a protective material, the forming the protective material comprising:

mixing an organic compound into a solvent to form an organic solution; and

adding a plurality of inorganic pellets to the organic solution to form an organic coating around each one of the plurality of inorganic pellets;

treating the conductive feature with the protective material, the treating the conductive feature comprising forming a protective layer over the conductive feature; and

forming an encapsulant around the conductive feature and the protective layer.

2. The method of claim 1 further comprising, before forming the encapsulant, rinsing the protective layer with water.

3. The method of claim 2 , wherein the protective layer is selectively formed over the conductive feature.

4. The method of claim 1 , wherein the protective layer has a thickness of greater than one monolayer of the protective material.

5. The method of claim 1 , wherein the treating the conductive feature with the protective material comprises the protective material reacting with a material of the conductive feature.

6. The method of claim 1 , wherein the inorganic pellets comprise a metal oxide.

7. The method of claim 1 further comprising, before treating the conductive feature with the protective material, removing a metal oxide layer from the conductive feature.

8. A method, comprising:

forming a protective material, the forming the protective material comprising:

mixing an organic compound into a solvent to form an organic solution; and

mixing a plurality of inorganic pellets into the solvent, wherein after mixing the plurality of inorganic pellets and mixing the organic compound, the organic compound forms a coating over each pellet of the plurality of inorganic pellets;

applying the protective material to a conductive feature to form a protective layer; and

placing a polymer material around the conductive feature and the protective layer.

9. The method of claim 8 , wherein the plurality of inorganic pellets comprises metal oxide.

10. The method of claim 9 , wherein the organic compound comprises a silicon atom and an amine group.

11. The method of claim 9 , wherein the applying the protective material to the conductive feature comprises selectively forming the protective layer adjacent to the conductive feature.

12. The method of claim 11 , wherein the applying the protective material to the conductive feature is performed at about 25° C.

13. The method of claim 9 , wherein the protective layer is chemically bonded to the conductive feature.

14. The method of claim 9 , wherein the mixing the organic compound into the solvent is performed at a temperature of between about 30° C. and about 70° C.

15. A method, comprising:

forming an organic solution by dissolving a first organic compound in a solvent;

adding inorganic pellets into the organic solution to form coated inorganic pellets, the coated inorganic pellets being coated by the first organic compound;

applying the coated inorganic pellets to a conductive feature; and

forming an encapsulant over the coated inorganic pellets.

16. The method of claim 15 , wherein forming the organic solution comprises dissolving a second organic compound in the solvent.

17. The method of claim 16 , wherein after adding the inorganic pellets into the organic solution:

the first organic compound has chemical bonds with the inorganic pellets; and

the second organic compound has chemical bonds with the inorganic pellets.

18. The method of claim 17 , wherein after adding the inorganic pellets into the organic solution, the first organic compound has chemical bonds with the second organic compound.

19. The method of claim 15 , wherein after applying the coated inorganic pellets to the conductive feature, the first organic compound has chemical bonds with the first organic compound.

20. The method of claim 15 , wherein after forming the encapsulant over the coated inorganic pellets, the encapsulant has chemical bonds with the first organic compound.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2021
From: CHO, HUNG-CHUN; KUO, HUNG-JUI; HU, YU-HSIANG; LIAO, SIH-HAO
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 056117/0879 →
Continuity (1)
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