Lookup table circuit comprising a programmable logic device having a selection circuit connected to a memory cell array and separated from a path of a read circuit
A lookup table circuit constituting a programmable logic device includes: a memory cell array including a plurality of memory cells, each having a resistive memory element; a selection circuit connected to the memory cell array and configured to output, to the memory cell array, a single cell-select signal or two or more cell-select signals for selecting a single memory cell or two or more memory cells among the plurality of memory cells, based on input of a plurality of logic signals; and a read circuit connected to the memory cell array and configured to read data from the single memory cell or the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals, among the plurality of memory cells. The selection circuit is separated from a path along which the read circuit is configured to read data from the memory cell array.
1. A lookup table circuit constituting a programmable logic device, comprising:
a memory cell array including a plurality of memory cells, each having a resistive memory element;
a selection circuit connected to the memory cell array and configured to output, to the memory cell array, a single cell-select signal or two or more cell-select signals for selecting a single memory cell or two or more memory cells among the plurality of memory cells, based on input of a plurality of logic signals; and
a read circuit connected to the memory cell array and configured to read data from the single memory cell or the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals, among the plurality of memory cells, wherein
the selection circuit is separated from a path along which the read circuit is configured to read data from the memory cell array,
the selection circuit includes:
two or more divided selection circuits configured to output the single cell-select signal or the two or more cell-select signals to the memory cell array in response to input of at least part of the plurality of logic signals; and
a mode switching circuit connected to the two or more divided selection circuits and configured to switch between a first mode and a second mode in response to input of a control signal, the first mode being defined as causing one of the two or more divided selection circuits to output the single cell-select signal to cause the read circuit, the memory cell array, and the selection circuit to operate as a single lookup table circuit, the second mode being defined as causing the two or more divided selection circuits to output the two or more cell-select signals, respectively to cause the read circuit, the memory cell array, and the selection circuit to operate as two or more lookup table circuits.
2. The lookup table circuit according to claim 1 , wherein
the read circuit includes two or more divided read circuits connected to the memory cell array and configured to read data from the single memory cell or the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals, and
the lookup table circuit further comprises a mode selector connected between the two or more divided read circuits and the memory cell array and configured to switch an electrical connection between the two or more divided read circuits and the memory cell array in response to input of the control signal.
3. The lookup table circuit according to claim 2 , wherein
the first mode is a mode in which the read circuit, the memory cell array, and the selection circuit operate as the single lookup table circuit into which the plurality of logic signals is configured to be input, and
the second mode is a mode in which the read circuit, the memory cell array, and the selection circuit operate as the two or more lookup table circuits, into each of which part of the plurality of logic signals is configured to be input,
in the first mode:
the selection circuit is configured to output the single cell-select signal to the memory cell array in response to the input of the control signal and the input of the plurality of logic signals;
the mode selector is configured to cause the memory cell array and one of the two or more divided read circuits to be electrically connected to each other in response to the input of the control signal; and
the one of the two or more divided read circuits is configured to read data from the single memory cell selected by the single cell-select signal among the plurality of memory cells, and
in the second mode:
the selection circuit is configured to output the two or more cell-select signals to the memory cell array in response to the input of the control signal and the input of the part of the plurality of logic signals;
the mode selector is configured to cause the memory cell array and the two or more divided read circuits to be electrically connected to each other in response to the input of the control signal; and
the two or more divided read circuits are configured to read data from the two or more memory cells, respectively, selected by the two or more cell-select signals among the plurality of memory cells.
4. The lookup table circuit according to claim 2 , wherein
the mode selector includes a mode-select transistor configured to be turned on and off in response to the input of the control signal to switch the electrical connection between the two or more divided read circuits and the memory cell array, and
each of the two or more divided read circuits is configured to read a voltage that is defined based on a combined resistance of the mode-select transistor and the single memory cell or each of the two or more memory cells selected by the single cell-select signal or the two or more cell-select signals.
5. The lookup table circuit according to claim 4 , wherein
each of the plurality of memory cells further includes a cell-select transistor connected to the selection circuit and configured to select the resistive memory element as an access target, based on the single cell-select signal or each of the two or more cell-select signals output from the selection circuit, and
a gate width of the mode-select transistor is longer than a gate width of the cell-select transistor.
6. The lookup table circuit according to claim 4 , wherein
each of the plurality of memory cells further includes a cell-select transistor connected to the selection circuit and configured to select the resistive memory element as an access target, based on the single cell-select signal or each of the two or more cell-select signals output from the selection circuit, and
on resistance of the mode-select transistor is smaller than on resistance of the cell-select transistor.
7. The lookup table circuit according to claim 2 , wherein
each of the two or more divided read circuits includes a single-ended sense amplifier.
8. The lookup table circuit according to claim 1 , wherein
the read circuit includes a single-ended sense amplifier.
9. The lookup table circuit according to claim 1 , further comprising a charging circuit connected to the memory cell array and configured to charge the plurality of memory cells during a read operation by the read circuit is not performed.
10. The lookup table circuit according to claim 1 , wherein
the resistive memory element is defined as a magnetic tunnel junction device.