Magnetic memory

1. A magnetic memory comprising:

a first wiring and a second wiring;

a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in a first direction from the first portion to the second portion;

a third wiring that is electrically insulated from the first magnetic member; and

a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the third wiring.

2. The magnetic memory according to claim 1 , wherein the trailing time is equal to or longer than 30 nsec.

3. The magnetic memory according to claim 1 , wherein the current pulse falls stepwise.

4. The magnetic memory according to claim 1 , wherein the trailing time is equal to or longer than a thermal relaxation time of the first magnetic member.

5. The magnetic memory according to claim 1 , further comprising a first magnetoresistive element disposed between the first portion and the first wiring,

wherein the second wiring extends in a second direction that crosses the first direction, the first wiring extends in a third direction that crosses the first direction and the second direction, and the third wiring is at a distance from the second portion and extends in a direction that crosses the first direction.

6. The magnetic memory according to claim 1 , wherein the first magnetic member has a shape of a tube extending in the first direction.

7. The magnetic memory according to claim 6 , wherein the first magnetic member has a circular, oval, or polygonal outer peripheral shape in a cross section taken along a plane that is perpendicular to the first direction.

8. The magnetic memory according to claim 6 , further comprising:

a conductive member disposed in the tube and electrically connected to the second wiring; and

an insulating material disposed between an inner surface of the first magnetic member and the conductive member.

9. The magnetic memory according to claim 8 , wherein the conductive member includes at least one element selected from the group consisting of W, Al, Cu, Ti, and Ta.

10. The magnetic memory according to claim 6 , further comprising an insulating material disposed in the tube, connecting to the second wiring, and having a higher heat conductivity than silicon oxide.

11. A magnetic memory comprising:

a first magnetic member including a first portion and a second portion, and extending in a first direction from the first portion to the second portion;

a second magnetic member extending in a second direction that crosses the first direction, the second magnetic member being connected to the first magnetic member;

a first electrode electrically connected to the first portion;

a second electrode electrically connected to the second magnetic member;

a magnetoresistive element disposed between the second magnetic member and the second electrode;

a wiring electrically insulated from the first magnetic member and the second magnetic member; and

a control circuit electrically connected to the first electrode, the second electrode, and the wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the wiring.

12. The magnetic memory according to claim 11 , wherein the trailing time is equal to or longer than 30 nsec.

13. The magnetic memory according to claim 11 , wherein the current pulse falls stepwise.

14. The magnetic memory according to claim 11 , wherein the trailing time is equal to or longer than a thermal relaxation time of the second magnetic member.

15. The magnetic memory according to claim 11 , wherein the first magnetic member has a shape of a tube extending in the first direction.

16. The magnetic memory according to claim 15 , wherein the first magnetic member has a circular, oval, or polygonal outer peripheral shape in a cross section taken along a plane that is perpendicular to the first direction.

17. A magnetic memory comprising:

a first wiring and a second wiring;

a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, and extending in a first direction from the first portion to the second portion;

a third wiring that is electrically insulated from the first magnetic member; and

a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is equal to or longer than 30 nsec.

18. The magnetic memory according to claim 17 , wherein the current pulse falls stepwise.

19. The magnetic memory according to claim 17 , wherein the trailing time is equal to or longer than a thermal relaxation time of the first magnetic member.

20. The magnetic memory according to claim 17 , further comprising a first magnetoresistive element disposed between the first portion and the first wiring,

wherein the second wiring extends in a second direction that crosses the first direction, the first wiring extends in a third direction that crosses the first direction and the second direction, and the third wiring is at a distance from the second portion and extends in a direction that crosses the first direction.

21. The magnetic memory according to claim 1 , wherein the first magnetic member comprises a plurality of regions between the first portion and the second portion, and a plurality of narrow portions on an outer surface of the first magnetic member between the regions,

the regions have at least one magnetic domain.

22. The magnetic memory according to claim 17 , wherein the first magnetic member comprises a plurality of regions between the first portion and the second portion, and a plurality of narrow portions on an outer surface of the first magnetic member between the regions,

the regions have at least one magnetic domain.