Slow wave inductive structure and method of forming the same
View Patent ↗A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.
1. A slow wave inductive structure comprising:
a first substrate;
a first conductive winding over the first substrate, wherein the first conductive winding comprises:
a first conductive element, wherein the first conductive element is a first distance from the first substrate; and
a second conductive element, wherein the second conductive element is a second distance from the first substrate, and the second distance is different from the first distance;
a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm, and the second substrate comprises polysilicon or doped silicon; and
a second conductive winding on an opposite side of the second substrate from the first conductive winding.
2. The slow wave inductive structure of claim 1 , wherein the first substrate is thicker than the second substrate.
3. The slow wave inductive structure of claim 1 , wherein the first conductive winding is electrically connected to the second conductive winding.
4. The slow wave inductive structure of claim 1 , further comprising a via extending through the second substrate to electrically connect the first conductive winding and the second conductive winding.
5. The slow wave inductive structure of claim 1 , further comprising a switch in the second substrate for selectively connecting the first conductive winding to the second conductive winding.
6. The slow wave inductive structure of claim 1 , wherein the first conductive winding is electrically isolated from the second conductive winding.
7. The slow wave inductive structure of claim 1 , wherein the first conductive winding further comprises:
a third conductive element, wherein the third conductive element is the first distance from the substrate.
8. The slow wave inductive structure of claim 1 , wherein the first conductive winding further comprises a via electrically connecting the first conductive element to the second conductive element.
9. The slow wave inductive structure of claim 1 , wherein the second conductive winding comprises:
a first conductive element, wherein the first conductive element is a first distance from the first substrate; and
a second conductive element, wherein the second conductive element is a second distance from the first substrate, and the second distance is different from the first distance.
10. The slow wave inductive structure of claim 9 , wherein the second conductive winding further comprises a via electrically connecting the first conductive element to the second conductive element.
11. A slow wave inductive structure comprising:
a first substrate;
a first conductive winding over the first substrate, wherein the first conductive winding comprises a first conductive element and a second conductive element;
a second substrate over the first substrate; and
a second conductive winding over the second substrate, wherein the first conductive winding is configured to be selectively connected to the second conductive winding, and the second conductive winding is electrically between the first conductive element and the second conductive element.
12. The slow wave inductive structure of claim 11 , wherein the first conductive winding is between the first substrate and the second substrate.
13. The slow wave inductive structure of claim 11 , wherein the first conductive element is a first distance from the second conductive winding; the second conductive element is a second distance from the second conductive winding, and the second distance is greater than the first distance.
14. The slow wave inductive structure of claim 11 , wherein a distance from the second conductive winding to the second substrate ranges from about 1 μm to about 2 μm.
15. The slow wave inductive structure of claim 11 , wherein the second substrate is between the first conductive winding and the second conductive winding.
16. The slow wave inductive structure of claim 11 , further comprising a switch for selectively connecting the first conductive winding to the second conductive winding.
17. A slow wave inductive structure comprising:
a first substrate;
a first conductive winding over the first substrate;
a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (μm) to about 2 μm; and
a second conductive winding over the second substrate, wherein the first conductive winding is configured to be selectively connected to the second conductive winding, and the second conductive winding comprises:
a first conductive element, wherein the first conductive element is a first distance from the first substrate; and
a second conductive element, wherein the second conductive element is a second distance from the first substrate, and the second distance is different from the first distance.
18. The slow wave inductive structure of claim 17 , wherein the second substrate comprises doped silicon or polysilicon.
19. The slow wave inductive structure of claim 17 , further comprising at least one switch configured to selectively connect the first conductive winding to the second conductive winding.
20. The slow wave inductive structure of claim 19 , wherein the at least one switch is physically between the first conductive winding and the second conductive winding.