Organic interposer including intra-die structural reinforcement structures and methods of forming the same
An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.
1. An organic interposer comprising:
dielectric material layers embedding redistribution interconnect structures;
package-side bump structures located on a first side of the dielectric material layers and connected to a package-side subset of the redistribution interconnect structures;
die-side bump structures located on a second side of the dielectric material layers and connected to a die-side subset of the redistribution interconnect structures, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
stress-relief line structures located on, or within, the dielectric material layers within an area of the gap region in the plan view, wherein the stress-relief line structures comprises a same material as, and are located at a same level as, one of the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures,
wherein:
the dielectric material layers comprise a die-side dielectric material layer;
the die-side bump structures comprise a respective horizontal surface contacting a horizontal surface of the die-side dielectric material layer;
the stress-relief line structures are in contact with the horizontal surface of the die-side dielectric material layer; and
the stress-relief line structures have a same material composition as, and a same thickness as, the die-side bump structures.
2. The organic interposer of claim 1 , wherein each of the stress-relief line structures comprises straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures.
3. The organic interposer of claim 1 , wherein each of the stress-relief line structures comprises:
first straight line segments that laterally extend along a first horizontal direction; and
second straight line segments that laterally extend along a second horizontal direction that is different from the first horizontal direction.
4. The organic interposer of claim 3 , wherein sidewalls of the first straight line segments and sidewalls of the second straight line segments of each of the stress-relief line structures are adjoined to one another by vertical edges.
5. The organic interposer of claim 2 , wherein the straight line segments are interconnected to one another by curved line segments having curved sidewalls.
6. The organic interposer of claim 1 , wherein:
the stress-relief line structures comprise first stress-relief line structures laterally extending along a first horizontal direction and second stress-relief lines structures laterally extending along a second horizontal direction; and
the stress-relief line structures are arranged as an interconnected mesh in which the first stress-relief line structures and the second stress-relief line structures are adjoined in a grid pattern.
7. The organic interposer of claim 1 , wherein:
the dielectric material layers comprise a package-side dielectric material layer that embeds the package-side bump structures and the stress-relief line structures;
the organic interposer comprises additional stress-relief line structures having horizontal surfaces that are not in contact with the dielectric material layers or the redistribution interconnect structures; and
horizontal surfaces of the package-side bump structures and the horizontal surfaces of the additional stress-relief line structures are located within a same horizontal plane.
8. The organic interposer of claim 7 , wherein the additional stress-relief line structures have a same material composition as, and a same thickness as, the package-side bump structures.
9. The organic interposer of claim 1 , wherein additional stress-relief line structures are embedded within the dielectric material layers and are located between a first horizontal plane including interfaces between the package-side bump structures and a first subset of the redistribution interconnect structures and a second horizontal plane including interfaces between the die-side bump structures and a second subset of the redistribution interconnect structures.
10. The organic interposer of claim 9 , wherein the additional stress-relief line structures have a same material composition as, and a same thickness as, a subset of the redistribution interconnect structures that is different from, or the same as one of, the first subset and the second subset.
11. An organic interposer comprising:
dielectric material layers embedding redistribution interconnect structures;
package-side bump structures located on a first side of the dielectric material layers and connected to a package-side subset of the redistribution interconnect structures;
die-side bump structures located on a second side of the dielectric material layers and connected to a die-side subset of the redistribution interconnect structures, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
stress-relief line structures located on, or within, the dielectric material layers within an area of the gap region in the plan view,
wherein:
the stress-relief line structures are located at a same level as a metallic component selected from the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures;
the stress-relief line structures comprise a different material than the metallic component;
the dielectric material layers comprise a package-side dielectric material layer that embeds the package-side bump structures and the stress-relief line structures;
horizontal surfaces of the package-side bump structures and the stress-relief line structures that are not in contact with the dielectric material layers or the redistribution interconnect structures are located within a same horizontal plane; and
the stress-relief line structures have a different material composition than, or have a different thickness than, the package-side bump structures.
12. The organic interposer of claim 11 , wherein:
the dielectric material layers comprise a die-side dielectric material layer;
the die-side bump structures comprise a respective horizontal surface contacting a horizontal surface of the die-side dielectric material layer;
additional stress-relief line structures are in contact with the horizontal surface of the die-side dielectric material layer; and
the additional stress-relief line structures have a different material composition than, or have a different thickness than, the die-side bump structures.
13. The organic interposer of claim 11 , wherein:
the organic interposer comprises additional stress-relief line structures;
the additional stress-relief line structures are embedded within the dielectric material layers and are located between a first horizontal plane including interfaces between the package-side bump structures and a first subset of the redistribution interconnect structures and a second horizontal plane including interfaces between the die-side bump structures and a second subset of the redistribution interconnect structures; and
the additional stress-relief line structures have a different material composition from the redistribution interconnect structures.
14. An organic interposer comprising:
dielectric material layers embedding redistribution interconnect structures;
package-side bump structures located on a first side of the dielectric material layers;
die-side bump structures located on a second side of the dielectric material layers, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
stress-relief line structures located on, or within, the dielectric material layers within an area of the gap region in the plan view,
wherein:
the stress-relief line structures comprises a same material as, and are located at a same level as, one of the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures;
each of the stress-relief line structures is not electrically connected to the redistribution interconnect structures;
the dielectric material layers comprise a package-side dielectric material layer that embeds the package-side bump structures and the stress-relief line structures; and
horizontal surfaces of the package-side bump structures and the stress-relief line structures that are not in contact with the dielectric material layers or the redistribution interconnect structures are located within a same horizontal plane.
15. The organic interposer of claim 14 , wherein each of the stress-relief line structures comprises straight line segments that laterally extend along a respective horizontal direction.
16. The organic interposer of claim 14 , wherein each of the stress-relief line structures comprises:
first straight line segments that laterally extend along a first horizontal direction; and
second straight line segments that laterally extend along a second horizontal direction that is different from the first horizontal direction.
17. The organic interposer of claim 14 , wherein additional stress-relief line structures are embedded within the dielectric material layers and are located between a first horizontal plane including interfaces between the package-side bump structures and a first subset of the redistribution interconnect structures and a second horizontal plane including interfaces between the die-side bump structures and a second subset of the redistribution interconnect structures.
18. The organic interposer of claim 11 , wherein:
each of the stress-relief line structures comprises straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures; and
the straight line segments are interconnected to one another by curved line segments having curved sidewalls.
19. The organic interposer of claim 11 , wherein:
the stress-relief line structures comprise first stress-relief line structures laterally extending along a first horizontal direction and second stress-relief lines structures laterally extending along a second horizontal direction; and
the stress-relief line structures are arranged as an interconnected mesh in which the first stress-relief line structures and the second stress-relief line structures are adjoined in a grid pattern.
20. The organic interposer of claim 14 wherein:
the stress-relief line structures comprise first stress-relief line structures laterally extending along a first horizontal direction and second stress-relief lines structures laterally extending along a second horizontal direction; and
the stress-relief line structures are arranged as an interconnected mesh in which the first stress-relief line structures and the second stress-relief line structures are adjoined in a grid pattern.