Light emitting device and manufacturing method of the light emitting device
A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit light-emitting area to be separated from each other; a plurality of rod-shaped LEDs disposed between the first and second electrodes; a reflective contact electrode disposed on opposite ends of the rod-shaped LEDs to electrically connect the rod-shaped LEDs to the first and second electrodes; and a light-transmitting structure disposed between the first and second electrodes and extending to cross the rod-shaped LEDs.
1. A light-emitting device, comprising:
a base layer;
a first electrode and a second electrode disposed on the base layer;
a light-emitting diode (LED) disposed on the base layer, the LED having a first end on the first electrode and a second end on the second electrode opposite to the first end; and
a light-transmitting structure disposed on the LED, wherein the light-transmitting structure is disposed between the first electrode and the second electrode such that the light-transmitting structure does not overlap a distal end of the first electrode that faces away from a center of the LED and overlap a distal end of the second electrode that faces away from a center of the LED from plan view.
2. The light-emitting device of claim 1 , further comprising:
a third electrode partially overlapping the first electrode on a plan view and electrically connected to the first end of the LED; and
a fourth electrode partially overlapping the second electrode on the plan view and electrically connected to the second end of the LED.
3. The light-emitting device of claim 2 , wherein
the first end of the LED is disposed between the first electrode and the third electrode, and
the second end of the LED is disposed between the second electrode and the fourth electrode.
4. The light-emitting device of claim 3 , wherein the light-transmitting structure is disposed between the third electrode and the fourth electrode.
5. The light-emitting device of claim 3 , wherein the first and second electrodes are disposed on a same layer.
6. The light-emitting device of claim 1 , wherein the light-transmitting structure is disposed between the first electrode and the second electrode such that the light-transmitting structure does not overlap a distal end of the first electrode that faces towards the center of the LED and overlap a distal end of the second electrode that faces towards the center of the LED from plan view.
7. The light-emitting device of claim 1 , wherein the light-transmitting structure comprises scatterers.
8. The light-emitting device of claim 7 , wherein the scatterers include at least one of TiO2 and SiO2.
9. The light-emitting device of claim 8 , wherein the light-transmitting structure further comprises a silicone resin within which the scatterers are distributed.
10. The light-emitting device of claim 1 , wherein the LED comprises:
a first semiconductor layer in the first end;
a second semiconductor layer in the second end; and
an active layer between the first semiconductor layer and the second semiconductor layer in a direction parallel to the base layer.
11. The light-emitting device of claim 1 , wherein the light-transmitting structure has a top surface with a dome shape.
12. The light-emitting device of claim 1 , wherein the light-transmitting structure has a top surface with a rough surface in the form of protrusions and depressions.
13. The light-emitting device of claim 1 , wherein the light-transmitting structure does not directly contact either of the first electrode or the second electrode.
14. The light-emitting device of claim 1 , wherein the light-transmitting structure extends directly below a center of the LED.